GB2261285A - Cuvette for ir spectroscopy - Google Patents

Cuvette for ir spectroscopy Download PDF

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Publication number
GB2261285A
GB2261285A GB9223607A GB9223607A GB2261285A GB 2261285 A GB2261285 A GB 2261285A GB 9223607 A GB9223607 A GB 9223607A GB 9223607 A GB9223607 A GB 9223607A GB 2261285 A GB2261285 A GB 2261285A
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GB
United Kingdom
Prior art keywords
cuvette
silicon
silicon dioxide
inlet
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9223607A
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GB2261285B (en
GB9223607D0 (en
Inventor
Armin Klumpp
Erwin Hacker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of GB9223607D0 publication Critical patent/GB9223607D0/en
Publication of GB2261285A publication Critical patent/GB2261285A/en
Application granted granted Critical
Publication of GB2261285B publication Critical patent/GB2261285B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • G01N21/03Cuvette constructions
    • G01N21/0303Optical path conditioning in cuvettes, e.g. windows; adapted optical elements or systems; path modifying or adjustment
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • G01N21/03Cuvette constructions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3577Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing liquids, e.g. polluted water
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • G01N21/03Cuvette constructions
    • G01N2021/0346Capillary cells; Microcells
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Optical Measuring Cells (AREA)

Abstract

The cuvette has inlet and outlet windows (1, 2), at least one sample volume (4) and a spacer 3, and is characterised in that the inlet and the outlet window are designed as wafers (1, 2) of high-resistance silicon, in that the spacer (3) is a layer of silicon dioxide applied to the first wafer (1) and which has a recess (4) surrounded by the layer serving as the sample volume, and in that the second silicon wafer (2) has two openings (5, 6) which emerge in the recess of the silicon dioxide layer, and in that the second silicon wafer (2) is firmly bonded to the silicon dioxide layer. Openings (5, 6) serve as inlet and outlet for samples undergoing investigation. Wafers (1, 2) may have anti reflex layers (7). <IMAGE>

Description

1),i 1_. 1 ' _ G _) -1 MICROCUVETTE FOR INFRARED SPECTROSCOPY This
invention relates to a cuvette for use in infrared spectroscopy. Infrared spectroscopy is a simple and quick method, with the assistance of Fourier transformation technology, for characterising the composition of materials.
In this method, molecular vibrations are stimulated in the material to be investigated by means of infrared light at a wave number in the range from 250cm- 1 to 7,000cm-land the absorption maxima are measured.
Conclusions can be drawn regarding the substance to be investigated from the change in position and the height of the absorption maxima by comparing measurements on substances and on known substances of similar composition.
However, the relative data obtained by means of such measurements are very often not adequate. In order to be able to make absolute statements, the absorption cross-sections of the molecular vibrations of interest have to be measured. Series of measurements, in which the absorption on samples of different thickness is determined, are necessary for this.
The higher the absorption for the substance to be investigated, the lower the sample thickness which has to be selected to obtain adequate intensities after transmission of the infrared rays.
Cuvettes having different gap widths, as well as cuvettes with a variable cuvette gap, are offered on the market for the infrared spectroscopy measurements on liquids. However, no cuvettes are available on the market having a gap width lower than 25)nn.
For many substances the absorption by the molecular vibrations of interest is so strong that a signal which 1 is adequate for evaluation is not transmitted during passage through the cuvette at this gap width.
This disadvantage of the available cuvettes has therefore been hitherto compensated in that the substance to be measured is diluted in a solvent which has only a low absorption in the wave number range of interest.
However, dipole moments and the freedon of movement of the molecular vibrations to be measured may be changed, and hence the position and strength of absorption falsified, due to interactions between the solvent and the substance being investigated. It is therefore desirable to take the measurements on the pure substance instead of on solutions.
Furthermore, the available cuvettes have the disadvantage that the windows which can be penetrated by infrared are either very sensitive to air moisture and/or mechanical stress, and/or are very expensive.
4 The object of the invention is to provide a cuvette which is not sensitive to air moisture and mechanical stress, and which can be manufactured inexpensively with different and sufficiently low gap width.
According to the invention, there is provided a cuvette for infrared spectroscopy having an inlet and an outlet window, at least one sample volume and a spacer, characterised in that the inlet and the outlet window are designed as wafers of high-resistance silicon, in that the spacer is a layer of silicon dioxide applied to the first wafer and which has a recess surrounded by the layer serving as the sample volume, and in that the second silicon wafer has two openings which emerge in the recess of the silicon dioxide layer, and in that the second silicon wafer is firmly bonded to the silicon dioxide layer.
The cuvette of the invention has an inlet and an outlet window made from high-resistance silicon. This material is one of the most investigated materials because of its use in microelectronics. Good manufacturing and processing methods are available. The material is not sensitive to moisture and is capable of intense mechanical stress. It has a transmission range for electromagnetic waves having a wave number in the range from 33cm- 1 to 8,300cm- 1 and thus is suitable for infrared spectroscopy.
The spacer between the windows which determines the gap width is a silicon dioxide layer which is applied to one of the silicon wafers, for example by means of epitaxy. The gap width may thus be kept as low as possible and may be varied within a wide range.
The silicon dioxide layer has a recess which serves as the sample volume. The silicon dioxide layer is firmly bonded to the second silicon wafer. Two straight openings in the silicon wafer, which are arranged such that they emerge in the recess of the silicon dioxide layer after fitting together with this layer, serve as inlet and outlet opening for the substance to be investigated. The openings are closed after filling - 6 the sample volume with the substance to be investigated.
Preferably, the silicon dioxide layer has several recesses separate from one another. A cuvette which has several sample volumes which all have exactly the same gap width is thus specified. This cuvette is particularly suitable for simultaneous measurement on different substances.
As already mentioned above, the thickness of the silicon dioxide layer may be varied within a wide range. Preferably, the layer has a thickness of 0.2 to 20 gm. At these layer thicknesses cuvettes are obtained which have a low gap width, such as have not been available hitherto.
Conveniently, the second silicon wafer serving as a window is bonded to the silicon dioxide layer with the aid of silicon wafer bonding. Hence a process which has proved its worth in microstructure technology is used, which leads to a bond which is absolutely tight and is capable of intense mechanical stress. A cuvette produced in this manner withstands extreme mechanical stresses and is also suitable for liquids having extremely high fluidity.
The inlet and outlet openings may be etched through the silicon wafer to aid manufacture of the cuvette using microstructure technology methods.
The inlet and outlet surfaces of the windows may be vapour-coated with hard anti-reflex layers. The reflection losses of the penetrating infrared ray are thus lowered and scratch resistance of the cuvette increased.
In a preferred embodiment, the cuvette has structured inlet and outlet surfaces for the window. The surfaces are divided into small partial surfaces which are at an angle relative to the total surface. The angle of the partial surfaces is selected so that the penetrating infrared ray meets the partial surfaces at the Brewster angle. Reflection losses may thus be largely avoided when using a polarised infrared ray. The angle of the partial surfaces is achieved by etching suitably orientated silicon.
Etching silicon at a flank angle of about 700 is required for the infrared light wave numbers used. The partial surfaces may be designed, for example as strips having a width of up to a few 100 gm.
The cuvette can be produced with the aid of processes known to microstructure technology. Silicon wafers serve as starting material here. Several identical cuvettes may be structured and constructed simultaneously on one wafer in one production step.
The essential advantages of the invention consist in also being able to investigate substances using molecular vibrations which lead to very strong absorption without adding solvents. Furthermore, the cuvette of the invention is not sensitive to mechanical stresses and to air moisture. It is also suitable for the use of unknown substances, since the windows are not attacked by water portions which may be present in such substances. Since silicon has a very low thermal expansion coefficient, the gap width is virtually independent of temperature, so that the cuvette may be used over a wide temperature range.
One exemplary embodiment of the invention will now be described, by way of example only, with reference to the accompanying drawing in which it schematically illustrates the construction of a cuvette of the invention.
A silicon wafer 1 serves as a base for the construction of the cuvette. A conventional silicon wafer having a thickness of 0.5mm may be used by way of example. The construction of several identical cuvettes is carried out in one working step. The identical cuvettes are then separated.
The silicon has doping from 1 to 10 ohm/cm. The transmission range for this material lies at wave numbers from 30 to 8,300cm- 1. The penetrability is - 10 about 40%. A change in the absorption strength and position due to interactions of the molecular vibrations with the silicon windows exist for transmission measurements, even for chemical bonds below the detectable level.
A layer of silicon dioxide is applied to the silicon wafer as a spacer 3, for example by means of epitaxy. The layer thickness may easily be varied between approximately 0.2 and 20)im. The silicon dioxide layer contains a recess 4 which serves as the sample volume. The recess is produced, for example by lithography and etching. The shape of the sample volume is adapted to the particular intended use.
A second silicon wafer 2 is firmly joined to the silicon dioxide layer. The bonding may preferably be carried out by means of silicon wafer bonding, or by means of adhesive techniques.
The second silicon layer 2 has two straight openings 5,6 which serve as the inlet and outlet opening for the - 11 substance to be investigated. After bonding with the silicon dioxide layer, the openings 5,6 emerge in the recess 4.
In order to reduce the reflection losses of the infrared ray which enters and leaves, the silicon wafers 1,2 are provided with anti-reflex layers 7.
The length and width of the cuvette may be between a few millimetres and a few centimetres depending on the intended use.

Claims (9)

  1. CLAIMS l. A cuvette for infrared spectroscopy having an inlet and an
    outlet window, at least one sample volume and a spacer, characterised in that the inlet and the outlet window are designed as wafers of high-resistance silicon, in that the spacer is a layer of silicon dioxide applied to the first wafer and which has a recess surrounded by the layer serving as the sample volume, and in that the second silicon wafer has two openings which emerge in the recess of the silicon dioxide layer, and in that the second silicon wafer is firmly bonded to the silicon dioxide layer.
  2. 2. A cuvette according to claim 1, characterised in that the silicon dioxide layer has several recesses separate from one another and the second silicon wafer has two openings per recess which emerge in the recess.
  3. 3. A cuvette according to claim 1 or claim 2, characterised in that the silicon dioxide layer has a thickness of 0.2 to 20 pm.
    - 13
  4. 4. A cuvette according to any one of claims 1 to 3, characterised in that the silicon wafer and the silicon dioxide layer are inseparably bonded to one another by means of silicon wafer bonding.
  5. 5. A cuvette according to any one of claims 1 to 4, characterised in that the openings in the second silicon wafer are formed with the aid of etching processes.
  6. 6. A cuvette according to any one of claims 1 to 5, characterised in that the inlet and the outlet window are vapour-coated with hard anti-reflex layers.
  7. 7. A cuvette according to any one of claims 1 to 6, characterised in that the inlet and the outlet window have a microstructure such that the surfaces are divided into partial surfaces which are at an angle so that the incident infrared ray meets them at the Brewster angle.
    - 14
  8. 8. A cuvette according to any one of claims 1 to 7, characterised in that silicon wafers, which are processed using the processes of microstructure technology, serve as starting materials for producing the cuvette, and in that several identical cuvettes may be produced simultaneously in one production step.
  9. 9. A cuvette substantially as herein described with reference to the accompanying drawing.
GB9223607A 1991-11-11 1992-11-11 Microcuvette for infrared spectroscopy Expired - Fee Related GB2261285B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4137060A DE4137060C2 (en) 1991-11-11 1991-11-11 Microcuvette for infrared spectroscopy

Publications (3)

Publication Number Publication Date
GB9223607D0 GB9223607D0 (en) 1992-12-23
GB2261285A true GB2261285A (en) 1993-05-12
GB2261285B GB2261285B (en) 1995-06-14

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Family Applications (1)

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GB9223607A Expired - Fee Related GB2261285B (en) 1991-11-11 1992-11-11 Microcuvette for infrared spectroscopy

Country Status (4)

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DE (1) DE4137060C2 (en)
FR (1) FR2683631A1 (en)
GB (1) GB2261285B (en)
NL (1) NL9201933A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2341925A (en) * 1998-09-25 2000-03-29 Michael Alan Ford Spectroscopic cell
US7355697B2 (en) 2004-08-26 2008-04-08 The United States Of America As Represented By The Department Of Health And Human Services Flow-through, thermal-expansion-compensated cell for light spectroscopy
US7479197B2 (en) 2002-10-09 2009-01-20 Micro-Biolytics Gmbh Thin-layer cell
EP2017601A2 (en) 2007-07-18 2009-01-21 The Government of the United States of America, represented by the Secretary, Department of Health and Human Services Flow-through, inlet-gas-temperature-controlled, solvent-resistant, thermal-expansion compensated cell for light spectroscopy
CN102549407A (en) * 2009-10-27 2012-07-04 Hydac电子技术有限公司 Measuring cell for the infrared analysis of fluids, measuring system having such a measuring cell, and method for producing such a measuring cell
US20120182548A1 (en) * 2009-07-23 2012-07-19 Insight Nanofluidics Inc Nanofluidic cell
US20160139040A1 (en) * 2014-11-13 2016-05-19 Emcee Electronics, Inc. Biodiesel detector
US9804086B2 (en) * 2014-11-13 2017-10-31 Emcee Electronics, Inc. Biodiesel detector
US20180372614A1 (en) * 2017-06-22 2018-12-27 Horiba, Ltd. Optical measurement cell and particle properties measuring instrument using the same

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DE9315508U1 (en) * 1993-10-13 1994-03-31 Palocz Andresen Michael Dr Ing Infrared absorption gas analyzer with separate optical cuvette
DE19647644C2 (en) * 1996-11-18 1999-04-15 Fraunhofer Ges Forschung Micromechanical transmission measuring cell
EP0938660B1 (en) 1996-11-18 2000-04-12 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Micromechanical transmission measuring cell
DE19738626C2 (en) * 1997-09-04 2001-02-08 Erhard Wendlandt Micro flow and culture cuvette
DE19739126C1 (en) * 1997-09-06 1999-04-29 Karlsruhe Forschzent Thin layer cuvette for FTIR spectroscopy
DE10316723A1 (en) * 2003-04-09 2004-11-18 Siemens Ag Test slide with sample wells, forming sealed reaction chamber with casing, also includes bonded seal forming resting surface for casing
DE10321472B4 (en) * 2003-05-13 2005-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Fluidic module, used as multi-functional micro-reaction module for chemical reactions, has fluid zone between one side permeable to infrared and side with infrared reflective layer for on-line analysis
DE10351160B3 (en) * 2003-11-03 2005-03-31 Roche Diagnostics Gmbh Continuous-flow cuvette and mid-range infra-red transmission spectrometer for biological fluids, comprises flow channel with two separate optical paths
DE102004008685A1 (en) * 2004-02-21 2005-09-29 Roche Diagnostics Gmbh Transmission spectrometer for the examination of a liquid sample
DE102007019695B4 (en) * 2007-04-24 2009-08-13 Analytik Jena Ag Cuvette for the optical analysis of small volumes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037974A (en) * 1974-10-17 1977-07-26 Fletcher Taylor C Sample cell for spectrophotometers
JPS5638008A (en) * 1979-09-06 1981-04-13 Canon Inc Display cell
DE3024874A1 (en) * 1980-07-01 1982-02-04 Gernot Klaus Brück Absorption measurement using laser beam passing through sample - incident at brewster angle for reduced boundary losses
EP0347579B1 (en) * 1988-06-01 1994-03-30 Daimler-Benz Aerospace Aktiengesellschaft Device having a specific support structure for receiving, analysing and treating samples
DE4004990C2 (en) * 1990-02-19 1998-04-09 Fisher Rosemount Gmbh & Co Ges Analysis cuvette

Cited By (19)

* Cited by examiner, † Cited by third party
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GB2341925B (en) * 1998-09-25 2002-06-05 Michael Alan Ford Improvements in or relating to cells for use in spectroscopic analysis
GB2341925A (en) * 1998-09-25 2000-03-29 Michael Alan Ford Spectroscopic cell
US7479197B2 (en) 2002-10-09 2009-01-20 Micro-Biolytics Gmbh Thin-layer cell
US7355697B2 (en) 2004-08-26 2008-04-08 The United States Of America As Represented By The Department Of Health And Human Services Flow-through, thermal-expansion-compensated cell for light spectroscopy
US7894055B2 (en) 2004-08-26 2011-02-22 The United States Of America As Represented By The Department Of Health And Human Services Flow-through, inlet-gas-temperature-controlled, solvent-resistant, thermal-expansion compensated cell for light spectroscopy
EP2017601A2 (en) 2007-07-18 2009-01-21 The Government of the United States of America, represented by the Secretary, Department of Health and Human Services Flow-through, inlet-gas-temperature-controlled, solvent-resistant, thermal-expansion compensated cell for light spectroscopy
US20120182548A1 (en) * 2009-07-23 2012-07-19 Insight Nanofluidics Inc Nanofluidic cell
CN102549407B (en) * 2009-10-27 2014-12-03 Hydac电子技术有限公司 Measuring cell for the infrared analysis of fluids, measuring system having such a measuring cell, and method for producing such a measuring cell
CN102549407A (en) * 2009-10-27 2012-07-04 Hydac电子技术有限公司 Measuring cell for the infrared analysis of fluids, measuring system having such a measuring cell, and method for producing such a measuring cell
KR101733490B1 (en) 2009-10-27 2017-05-11 하이닥 일렉트로닉 게엠베하 Measuring cell for the infrared analysis of fluids, measuring system having such a measuring cell, and method for producing such a measuring cell
US20160139040A1 (en) * 2014-11-13 2016-05-19 Emcee Electronics, Inc. Biodiesel detector
US9797830B2 (en) * 2014-11-13 2017-10-24 Emcee Electronics, Inc. Biodiesel detector
US9804086B2 (en) * 2014-11-13 2017-10-31 Emcee Electronics, Inc. Biodiesel detector
US20180372614A1 (en) * 2017-06-22 2018-12-27 Horiba, Ltd. Optical measurement cell and particle properties measuring instrument using the same
GB2565888A (en) * 2017-06-22 2019-02-27 Horiba Ltd Optical measurement cell and particle properties measuring instrument using the same
JP2019211455A (en) * 2017-06-22 2019-12-12 株式会社堀場製作所 Optical measuring cell and particle physical property measuring device using the same
US10782225B2 (en) 2017-06-22 2020-09-22 Horiba, Ltd. Optical measurement cell and particle properties measuring instrument using the same
GB2565888B (en) * 2017-06-22 2021-05-19 Horiba Ltd Optical measurement cell and particle properties measuring instrument using the same
JP7308594B2 (en) 2017-06-22 2023-07-14 株式会社堀場製作所 Optical measurement cell and particle physical property measurement device using the same

Also Published As

Publication number Publication date
DE4137060A1 (en) 1993-05-13
FR2683631A1 (en) 1993-05-14
GB2261285B (en) 1995-06-14
DE4137060C2 (en) 1993-10-14
NL9201933A (en) 1993-06-01
FR2683631B1 (en) 1995-03-10
GB9223607D0 (en) 1992-12-23

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