GB2259594A - On-chip semiconductor memory test apparatus - Google Patents

Description

? r, f. r e% 4 1 SEMICONDUCTOR MEMORY DEVICE The present invention relates

to a semiconductor memory device having a plurality of groups of bit lines.

As the capacity of semiconductor memory devices increases, the resulting increase in test time becomes a serious problem. in an article by J. Inoue et al., entitled -Parallel Test-ing Technology for VLSI Memories", ITC Proceedings 1987 111) 1066-1071 and in an article entitled "Teciiiiol(.)gy for Increasing Test Efficiency Suitable for Very Large Capacity 1-',eniories" 1987 National Conference 1.65 of Semiconductor Materials Section of the Institute of Electronics, Information and Communication Engineers of Japan pp 166, parallel testing technologies for VLSI are proposed, which drastically reduce functional test time. In accordance with these proposals, all memory cells connected to a word line are simultaneously tested by introducing an on-chip test circuit.

j is Fig. 1 is a circuit diagram showing a structure of a memory comprising an on-chip test circuit shown in the latter document. This memory comprises an m x n bit memory array having a plurality of memory cells arranged in a matrix, as shown in, for example, Fig. 2.

In Fig. 1, a test circuit 20 is connected to a memory array 10. In the memory array 10, a plurality of word lines and a plurality of bit line pairs are arranged -with each other, memory cells being provided a'L: thci.-eo-l'-.. In Fic- 1, four word 1-iness I.J1,1 to WL, and t,,.o 105.t line pairs B1, B1 and B2, 9-2 are typically slio,.,7n- The test circuit 20 comprises a.,.-rite cirei,.-it 30, circuits CP1 and CP2 and a detecting circuit 100. The write circuit 30 comprises N channel MOS tre-,is.i.stoi-s Q to- Q,1, a write control line TV-JC, and' write lines W and W. The comparing circuit CP1 comprises N channel MOS transistors Q5 and Q6, and the comparing circuit CP2 comprises N channel MOS transistors Q7 and Q8.

The detecting circuit 100 comprises N channel MOS transistors Q9 and Q10, an inverter G1, and a precharge circuit 110.

In the above described document, a line test is proposed by which test time is significantly reduced. Description is now made on the line test. First, for example, "1C and "W level data are respectively applied - 2 1 to the write lines W and W, and a potential on the write control line WC is raised to the 111111 level. Consequently, the transistors Q1 to Q4 are turned on, so that potentials on the bit lines B1 and B2 become the "H" level and the potentials on the bit lines U-1 and U-2 become the "L" level. When a potential on the word line WL1 is raised to the "H" level, "H" level data are respectively written into memory cells M1 and M3. After writing, the potentials on the word line WL1 and the write control line 'V.;C re brought to tile "L" level.

Thereafter, when the potential on the word line WL1 is raised to the "Hlevel, the data stored in the memory cells M1 and M3 are respectively read out onto the bit lines B1 and B2. Data on the bit line pairs B1, B1 and 132, 2 are amplified by a sense amplifier (not shown). In the case of the memory array 10 shown in Fig. 2, n-bit data as amplified are read out onto the bit line pairs. Then, "L" and "H" level data are respectively applied to the write lines W and W.

When the data read out from the memory cells M1 and M3 are at the "H" level, the potentials on the bit liness B1 and B2 become the "H" level, and the potentials on the bit lines _fl and become the "L" level. Consequently, the transistors Q5 and Q7 are turned on, so that both potentials of nodes N1 and N2 become the "L" level.

1 Therefore, the transistors Q9 and Q10 are turned off, so that the node N3 precharged in advance by the precharge circuit 110 is not discharged. Thus, an "L" level flag signal is outputted to a detection signal output line DS.

It is assumed here that the memory cell M1, for example, is defective. In this case, the data read out from the memory cells M1 and M3 respectively become the "L" and "H" levels, although "H" level data were written in the memory cells M1 and M3. Consequently, the potentials on the bit lines B1 and B1 respectively become the "L" and "H" levels. When "L" and "H" level data are respectively applied to the write lines W and W, the transistor Q6 is turned on, so that the node N1 is charged at the "H" level. Consequently, the transistor Q9 is turned on, so that the node N3 is discharged at the "L" level. As a result, an "H" level flaa signal indicating an error is outputted from the detection signal output line DS.

As described in the foregoing, in the above described line test, data are applied to the write lines W and W and then, the data are written into a row of memory cells connected to a selected word line. As a result, the same data are written in the row of memory cells. The data are read out from the row of memory cells, and data opposite to the data previously applied to the write lines W and are respectively applied to the write lines W and W. When data read out from a row of memory cells all match data previously written in the row of memory cells, an "L" level flag signal is outputted from the detection signal output line DS. On the other hand, when at least one memory cell out of a row of memory cells connected to one word line is defective so that data read out from the memory cell does not match data previously written in the memory cell, an "H" level flag signal is outputted from the detection signal output line DS.

As described in the foregoing, in the memory comprising an on-chip test circuit shown in Fig. 1, all memory cells connected to one word line are simultaneously tested. Thus, significant test time reduction is expected.

However, in this memory,.the write c oAtrol line WC and the write lines W and W common to all the bit line pairs are provided, whereby only the same data can be written in a row of memory cells connected to one word line. More specifically, a pattern of test data inputted to a row of memory cells is formed of "H" or "L" level data. Therefore, leakage between adjacent memory cells, or the like can not be detected by writing different data into the adjacent memory cells. Thus, in the memory shown in Fig. 1, detection sensitivity of the defective memory - 6 cell is decreased, although the test time can be reduced by the line test.

An object of the present invention is to improve the realiability of a test without increasing the test time, in a semiconductor memory device comprising an on-chip test circuit.

According to the invention there is provided a semiconductor memory device having hierarchical data bus lines including a plurality of hierarchies, comprising: a plurality of holding means provided for data bus lines included in any one of said plurality of hierarchies and each having an amplifying function of amplifying information on the corresponding data bus line and a latching function of holding the information, and a plurality of comparing means provided corresponding to said plurality of holding means for each comparing the information on the corresponding data bus line with the information held in the corresponding holding means.

The invention will now be described by way of 7 - example drawings, Fig. 1 is a conventional an on-chip test circu only, in which: a circuit diagram showing a structure of semiconductor memory device comprising it; Fig. 2 is a diagram showing a memory array in the semiconductor memory device shown in Fig. 1 Fig. 3 is a block diagram showing structure of a an on-chip test the present with reference to the accompanying an entire semiconductor memory device comprising circuit according to one embodiment of invention; Fig. 3A is a diagram for explaining a hierarchical structure of data bus lines; Fia. 4 is a diagram showing a strllcttix--e of a main portion of a memory array in the semiconductor memory device shown in Fig. 3; Fig. 4B is a diagram showing another structure of a memory array of the semiconductor memory device shown in Fig. 3; Fig. 5 is a circuit diagram showing a structure of a line test register shown in Fig. 4; Fig. 6 is a timing chart for explaining an ordinary read operation in the semiconductor memory device shown in Fig. 3 to 5; Fig. 7 is a timing chart for explaining an ordinary write operation in the feir,.'1.conductor memory device shown in Figs. 3 to 5; Fig- 8 is a timing chart for explaining an operation for writing expected data to registers in the semiconductor memory device shown in -Figs. 3 to 5; Fig. 9 is a timing cliari: for ex.plaining a ma.tch operation in the semiconductor memory device shown in Figs. 3 to 5; Fig. 10 'is a f low chart for explaining a line test mode; Fig. 11A is a typical diagram for explaining an operation for writing random data held in registers into a row of memory cells; Fig. 11B is a typical diagram for explaining an operation for detecting a match of data read out from a row of memory cells and expected data held in registers; 8 11 1 X 1 _) 1 - Fig. 12A is a diagram showing one example of a pattern of test data; Fig. 12B is a diagram for explaining test time of a test based on a pattern referred to as a checker board; Fig. 13 is a circuit diagram showing a structure of a main portion of a semiconductor memory device comprising an on-chip test circuit according to another embodiment of the present invention; Fic. 1-4 is a circuit diagram showing a structure of a portion of a semiconductor iiic-iio--!-y device comprising test circuit according to still- another of the present invention; is a circuit diagram showing a structure of a ifili:i portion of a semiconductor memory device comprising te-st circuit accordinu to a further embodiment of the present invention; Fig. 16 is a diagram showing a structure of a circuit for generating a redundant circuit activating signal; and Fig. 17 is a waveform diagram, of a control signal for activating the circuit shown in Fig. 16.

Fig- 18 is a circuit diagram showing a structure of a main portion of a semiconductor memory device comprising an on-chip test circuit according to a further embodiment of the present invention; i 0 1 -1 Fig. 19 is a circuit diagram showing a structure of a main portion of a semiconductor memory device comprising an on-chip test circuit according to a still further embodiment of the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring now to the figures, the embodiments of the present invention will be described in detail.

Fig. 3 is a block diagram showing an entire structure of a semiconductor memory device comprising an on-chip test circuit according to one embodiment of the present invention. In addition, Fig. 4A is a diagram showing a structure of a main portion of a memory array included in the semiconductor memory device shown in Fig. 3.

in 'P-L-g. 3, a memory array -1 comprises a plurality of sub-input/output line pairs arranged in a plurality of columns. A plurality of bit line pairs are provided corresponding to each of the plurality of subinput/output line pairs. In Fig. 3, only one sub-input/output line pair (referred to as sub I/0 line pair hereinafter) SIO1 and SIO1 and two bit line pairs BL1, BL1 and BL2, BL2 provided corresponding thereto are typically shown.

In Fig. 4A, only two sub I/0 line pairs SI01, SIO1 and SI02, S102 are typically shown. In addition, only three bit line pairs BL1, BL1 to BL3, BL3 provided corresponding to the sub I/0 line pair SIO1 and S101 are shown, and only three bit line pairs BL4, BL4 to BL6, BL6 provided corresponding to the sub I/0 line pair S102 and S102 are shown. A sense amplifier SA is connected to each of the bit line pairs BL1. BL1 to BL6, BL6. The sense amplifier SA is operated in response to a sense amplifier activating signal 4)s.

Additionally, the bit lines BL1 and BLI are respectively connected to the sub I/0 lines S101 and SIO1 through switches S1. Similarly, the bit line pairs BL2, B11,2 and BL3, BL3 are respectively connected to the sub I/0 line pair SIO1 and S101 through switches S2 and switches S3. In addition, the bit line pairs BL4, BL4, BL5, BL5 and BL6, BL6 are respectively connected to the sub I/0 line pair S102 and S102 through switches S4, switches S5 and switches S6. A switching signal SW1 is applied to the s,,,;itches SI and S4, a switching signal SW2 is applied to the switches S2 and SS and a switching signal SW3 is applied to the switches S3 and S6.

A plurality of word lines are arranged intersecting with the bit line pairs BL1, BL1 to BL6, BL6. In Fig. 4A, only a single word line WL intersecting with the bit line pairs BL1, BL1 and BL4, BL4 is typically shown. A memory cell MC1 is provided at an intersection of the word line WL and the bit line BL1, and a memory cell MC2 is provided at an intersection of the word line WL and the bit line - C 1 BL4. On the other hand, the sub I/0 line pairs SI01, SIO1 and SI02, S102 are respectively connected to an input/output line pair I/0 and 1/0 through line test registers 70. The plurality of line test registers 70 constitute a line test register portion 7.

In this semiconductor memory device, data bus lines for inputtingloutputting data to/from memory cells have a hierarchical structure comprising an input/output line pair, a plurality of sub I/0 line pairs and a plurality of bit line pairs, as shown in Fig. 3A.

In Fig. 3, an address buffer/predecoder (merely referred to as address buffer hereinafter) 2 applies an externally applied address signal to a row decoder 3 at preu'ete7i-ctirieu' timings. in addition, the adu-'re:;s buffer 2 applies the externally applied address signal to a column decoder 4 at predetermined timings. Furtherm6re, the address buffer 2 applies switching signals SW1 to SWn in response to the externally applied address signal. The row decoder 3 selects array one of word lines in the memory array 1 in response to the address signal. The column decoder 4 selects any one of sub 110 line pairs in the memory array 1 in response to the address signal, to connect the same to an input/output line pair I10 andY-70 Data read out from the memory array 1 is outputted as output data Dout to the exterior through the input/output 12 - 1 i line pair I/0 and 17-0 and an input/output buffer 8. In addition, externally applied input data Din is written into the memory array 1 through the input/output buffer 8 and the input/output line pair i/0 and 1/0.

A comparator portion 5 and a register portion 6 are provided between the memory array 1 and the column decoder 4. The comparator portion 5 and the register portion 6 constitute a line test register portion 7 shown in Fic. 4A.

A timing generator 9 generates various control signals for controlling each portion upon receipt of a row address strobe signal RAS, a column address strobe CAS, a write enable signal WE, a tL-st enable signal TE which are externally applied and an address transition detecting signal ATD applied from the address buffer 2. Meanwhile, a recent large capacity semiconductor memory device may comprise a redundant circuit including a spare column la, a spare comparator 5a, a spare reqister 6a, and a spare column decoder 4a in order to improve the yield.

Fig. 4B is a diagram showing another example of a structure of a memory array included in the semiconductor memory device shown in Fig. 3.

In Fig. 4B, only a single sub I/0 line pair SIO1 and SIO1 is typically illustrated.. Two bit line pairs BL1 and BLI and BL2 and BL2 are arranged adjacent to each other - 13 between the sub I/0 lines SIO1 and SIO1. Sense amplifiers SA connected to the bit line pairs BL1 and BLI and BL2 and BL2 are arranged adjacent to each other. Each of switches SI and S2 comprises an N channel MOS transistor. Structures of other portions are the same as those shown in Fig. 4A.

Fig. 5 is a circuit diagram showing a structure of the line test register portion 7 shown in Fig. 4A. In Fig. 5, each of line test registers 70 comprises a comparator 50 and a register 60. The comparator 50 comprises N channel MOS transistors Q15 to Q18. Nodes N11 and N12 in the comparator 50 are respectively connected to sub I/0 lines SIO1 and SIO1 through N channel MOS transistors Q11 and Q12. A node N13 in the comparator 50 is connected to the sub I/0 line SIO1 throuqh the transistor Q15 and an N channel P11OS transistor Q13, and to the sub I/0 line SIO1 through the transistor Q16 and an N channel MOS transistor Q14. In addition, the transistor Q18 is coupled between a match line YLL and a ground potential. The transistor Q18 has its gate connected to the node N13. Thus, the node N13 is connected to the match line ML in a wired-OR manner. The transistor Q17 is coupled between the node N13 and the ground potential. The transistors Q11 and Q12 have their gates receiving a control signal (l, and the transistors Q13 and Q14 have 14 - 1 their gates receiving a control signal q2. Furthermore, the transistor Q17 has its gate receiving a control signal (t3. The transistors Q15 and Q16 constitute an exclusive OR circuit.

The register 60 comprises N channel MOS transistors Q19 and Q21 and P channel MOS transistors Q20 and Q22 respectively cross-coupled between the nodes N11 and N12. A control signal (P4 is applied to a node N14 in the register 60, and a control signal (5 is applied to a node N15 therein.

On the other hand, the nodes Nll and N12 are respectively connected to input/output lines I/0 and I/0 through N channel MOS transistors Q51 and Q52. The transistors Q51 and Q52 have rheir gates receiving a column selecting signal Y from the column decoder 4 shown in Fig. 3.

Structures of the comparator 50 and the register 60 connected to a sub I/0 line pair S102 and S102 are the same as those connected to the sub I/0 line pair SIO1 and SI01. However, a column selecting signal Y i+l is applied from the column decoder 4 to gates of transistors Q51 and Q52 corresponding to the sub I/0 line pair S102 and SI02. The control signals (bl to 1)5 are generated from the timing generator 9 shown in Fig. 3.

Referring now to timing charts of Figs. 6 to 9, description is made on an operation of the semiconductor memory device shown in Fig. 3 to 5.

Fig. 6 is read operation When the a timing chart for explaining an ordinary in the semiconductor memory device. control signal (1 is raised to the "H" level, the transistors Q11 and Q12 are turned on. Consequently, each of the sub I/0 line pairs SI01, SIO1 and SI02, S102 is connected to the corresponding nodes Nll and N12. Then, when a potential on the word line WL is raised to the "H" level, data stored in the memory cell MC1 is read out onto the bit line BL1, and data stored in the memory cell MC2 is read out onto the bit line BL4 (in Fig. 4A). Consequently, potentials on the bit lines BL1 and BL4 are changed. When a sense amplifier activating signal (s is raised to the "H" level, the sense amplifiers SA are operated. Consequently, potential differences between the bit line pair BL1 and BL1 and between the bit line pair BL4 and BL4 are respectively amplified.

Then, when the switching signal SW1 is raised to the "H" level, the switches S1 and S4 are turned on, so that the bit line pairs BL1, BL1 and BL4, BL4 are respectively connected to the sub I/0 line pairs SI01, SIO1 and SI02, SI02. In addition, the column selecting signal Y i is raised to the "H" level, so that the sub I/0 line pair -16 SIO1 and SIO1 is connected to the input/output line pair I/0 and 17-0. Consequently, data on the bit line pair BLI and BL1 is transferred onto the input/output line pair I/0 and 17-05 through the sub 1/0 line pair and the nodes N11 and N12. At that time, the control signals ($l4 and 4)5 are respectively changed to the "L" and "Ill, levels. As a result, a potential difference between the nodes N11 and N12 is amplified. In this case, each of the registers 60 f;erve.,s as an amplifier.

in the above described manner, the data stored in the meinory cell MC1 is read out onto the input/output line pair I/0 and I/0.

Fic. 7 is a timing chart for explaining an ordinary write operation in this semiconductor memory device. it is assumed here that data is read out from the memory cell MC-1 and then, inverted data of the data as read out is written into the memory cell MC1.

First, the control signal (bl is raised to the "H" level. Consequently, each of the sub I/0 line pairs SI01, SIO1 and S102, S102 is connected to the corresponding nodes Nll and N12. When a potential on the word line WL is raised to the "H" level, data stored in the memory cell MC1 is read out onto the bit line BL1, and data stored in the memory cell MC2 is read out onto the bit line BL4. When the sense amplifier activating signal (s is raised to 17 1 _) the "1C level, the sense amplifiers SA are operated. Consequently, potential differences between bit line pair BL1 and BL1 and between the bit line pair BL4 and BL4 are respectively amplified.

Then, when the switching signal SW1 is raised to the "ii" level, the bit line pair BL1 and BL1 is connected to the sub I/0 line pair SIOI and SI01, and the bit line pair BL4 and BL4 is connected to the sub I/0 line pair S102 and SI02. When the control signals qb4 and (5 are respectively changed to the "L" and "iV levels, the registers 60 are activated. Consequently, potential differences between the sub I/0 line pair SIO1 and SIO1 and between the sub I/0 line pair S102 and S102 are respectively amplified. In this case, each of the registers 60 serves as am amplifier.

In the above described manner, the data store d in the memory cell MC1 is read out onto the sub I/0 line pair SIO1 and SI01, and the data stored in the memory cell MC4 is read out onto the sub I/0 line pair S102 and SI02.

On the other hand, complementary data are applied to the input/output line pair I/0 and I/0. It is assumed here that inverted data of the data read out from the memory cell MC1 is applied. When the control signal l is lowered to the "L" level, the sub 110 line pairs SI01, SIO1 and SI02, S102 are respectively disconnected from the - 18 1) corresponding nodes Nll and N12. In addition, when the switching signal SW1 is lowered to the "L" level, the bit line pair BL1 and BL1 is disconnected from the sub 1/0 line pair SIO1 and SI01, and the bit line pair BL4 and BL4 is disconnected from the sub I/0 line pair S102 and SI02.

The control signals (4 and (5 are returned to an intermediate potential of a power-supply potential, and the column selecting signal Y i becomes the "H" level and the control signal (P1 becomes the "H" level. Consequently, the sub I/0 line pair SIO1 and SIO1 is connected to the input/output line pair I/0 and I/0 through the nodes N1 and N12. As a result, the data on the input/output line pair I/0 and'1/0 are respectively transferred to the sub I/0 line pair SIO1 and SIO1 through the nodes N11 and N12. When the control signals (4 and (5 are respectively changed to the "L" and "H" levels, a potential difference between the sub I/0 line pair SIOI and SIO1 is amplified.

Then, when the switching signal SW1 is raised to the "H" level, the bit line pair BL1 and BL1 is connected to the sub I/0 line pair S101 and SI01. Consequently, the data on the sub I/0 line pair SIO1 and SIO1 is transferred to the bit line pair BL1 and BL1. As a result, the data on the bit line pair BL1 and BL1 is inverted, so that the inverted data is written into the memory cell MC1.

1 i 5 Fig. 8 is a timing chart for explaining a write operation of expected data to the registers 60 in this semiconductor memory device.

First, a potential on the word line WL is raised to the "H" level. Consequently, data stored in the memory cell MC1 is read out onto the bit line BLI, and data stored in the memory cell MC2 is read out onto the bit line BL4. When the sense amplifier activating signal (bs is raised to the "H" level, the sense amplifiers SA are operated, so that potential differences between the bit line pair BL1 and BL1 and between the bit line pair BL4 and BL4 are respectively amplified. At that time, since the switching signal SW1 is at the "L" level, the bit line pairs BLI, BL1 and BL4, BL4 are respectively disconnected from the sub I/0 line pairs SI01, SIO1 and SI02, S102 In addition, since --he control, signal (bl Li at the "L" level, the sub 1/0 line pairs -SI01, S101 and S102, S102 are respectively disconnected from the corresponding nodes N11 and N12.

Then, complementary expected data are applied to the input/output line pair I10 and I/0. When the column selecting signal Y. is raised to the "H" level, the nodes N11 and N12 corresponding to the sub 1/0 line pair S101 and S101 are connected to the input/output line pair I/0 and 170. Consequently, the expected data on the - 20 i 1 input/output line pair 1/0 and -175 is transferred to the nodes Nll and N12. When the control signals (4 and 4)5 are respectively changed to the "L" and "H" levels, the registers 60 are activated. Consequently, a potential difference between the nodes Nll and N12 is amplified. As a result, data on the nodes Nll and N12 are held in the corresponding register 60. When the column selecting signal Y j- is lowered to the "L" level, the nodes Nll and N12 are disconnected from the input/output line pair 1/0 and I/0.

Then, new expected data is applied to the input/output line pair I/0 and I/0. When the colt,.,rn selecting signal Y i+l is raised to the "H" level, the nodes N11 and N12 corresponding to the sub I/0 line pair S102 and S102 are connected to the input/output line i:)a j-. I/0 and 17-0. Consequently, the expected data on the inputVoutput line-pair I/0 and I/0 is transferred to the nodes Nll and N12. When the control signals (4 and d)5 are respectively changed to the "L" and "H" levels, the registers 60 are activated. Consequently, a potential difference between the nodes Nll and N12 is amplified- As a result, the expected data is held in the corresponding register 60. When the column selecting signal Y i+l is lowered to the "L" level, the nodes Nll and N12 are disconnected from the input/output line pair I/0 and I/0.

In the above described manner, the expected data is written in each of the registers 60. In this case, each of the registers 60 serves as a latch circuit. Meanwhile, a refresh operation is performed with respect to the memory cells MC1 and MC2.

Fig. 9 is a timing chart for explaining a match operation in this semiconductor memory device. In this case, the match line MI, is precharged at the "H" level in advance.

First, a potential on the wol-d 1 ine W!, is raised to the "H" level. Consequently, data stored in the niemory cell MC1 is read out onto the bit llne E3L!, and data stored in the memory cell MC2 is read' out onto the bit line BL4. When the sense amolif -ier ac4-j-vat-i-nu signal)S is raised to the "H" level, the sense.,i-.r)lj.:.fiers SA are operatedConsequently, potential differences between the bit line pair BL1 and BL1 and between the bit line pair BL4 and BL4 are respectively amplified- When the switching signal SW1 is raised to the "H" level, the bit line pair BL1 and BL1 is connected to the sub 1/0 line pair SIO1 and SI01, and the bit line pair BL4 and BL4 is connected to the sub I/0 line pair S102 and SI02. Consequently, the data read out from the memory cell MC1 is transferred to the sub I/0 line pair SIO1 and SI01, and 22 - the data read out from the memory cell MC2 is transferred to the sub 1/0 line pair S102 and SI02.

Then, the control signal (D3 is lowered to the "W level. Consequently, the transistor Q17 in each of the comparators 50 is turned off. In addition, the control signal 4)2 is raised to the "H" level. Consequently, the transistors Q13 and Q14 are turned on, so that the sub I/0 line pairs SI01, SIO1 and S102, S102 are respectively connected to the corresponding comparators SO.

When the data read out onto the sub I/0 line pair SIO1 and SIO1 from the memory cell MC1 matches expected data held in the nodes PZ11 and N12 by the corresponding t_ " L register 60, a potential of the node N13 becomes the level. Therefore, the transistor Q18 remains off.

Sir,,,-5larly,,,,lien the (Alata read out onto the sub 1/0 line pair S102 and SIOd from the memory cell MC2 matches the exoected data held in the nodes Nll and N12 by the corresponding register 60, the correspondingtransistor Q18 remains off. Thus, the match line MILT remains at the "H" level.

However, when the data read out onto the sub I/0 line pair SIO1 and SIO1 from the memory cell MC1 does not match the expected data held in the corresponding nodes Nll and N12, the potential of the node N13 becomes the "H" level represented by a broken line. Therefore, the transistor 1 (_) 1: ' Q18 is turned on, so that the match line ML is discharged such that a potential thereon becomes the "L" level represented by a broken line. Similarly, when the data read out onto the sub I/0 line pair S102 and S102 from the memory cell MC2 does not match the expected data held in the corresponding nodes N11 and N12, the match line ML is discharged such that a potential thereon becomes the "L" level. More specifically, the match line ML is connected to all the line test registers 70 in an OR manner. Thus, if at least one of a row of memory cells connected to a single word line is defective, the potential on the match line ML becomes the "L" level. On the other hand, if all -p a row of memory cells connected to a single word line are normal, the potential on the match line ML remains at the "W' Ievel.

As described in the forgoing, in this jemiconductor memory device, each of the registers 60 serves as a preamplifier for a sub I/0 line pair at the time of ordinary read and write operations, while serving as a data latch for holding expected data at the time of testing.

Since the register portion 6 comprising the plurality of registers 60 can hold random data, the random data can be used as expected data. Thus, a line test based on random test data can be performed.

- 24 Referring now to Figs. 10 to 12, description is made on a line test mode of this semiconductor memory device.

In Fig. 11A, random data are written in registers 60 (in the step S! shown in Fig. 10). Then, the data held in registers 60 are transferred to a row of memory cells MC1 to MC4 connected to a single word line WL (in the step S2). The operation in the step S2 is performed with respect to all word lines. Consequently, data are written into all memory cells.

In Fig. 11B, data read out from a row of memory cells MC1 to MC4 connected to a single word line WL are compared with data (expected data) held in the registers 60 in comparators 50 (in the step S3). In Fig. 11B, it is assumed that data "0" written in the memory cell MC2 is inverted to "1" because the memory cell MC2 is defective. In this case, a match line ML is discharged by the corresponding comparator 50 such that a potential thereon becomes the "W level. The operation in the step S3 is performed with respect to all word lines. Therefore, data stored in all memory cells are tested.

In the above described manner, a line test based on random test data can be performed. Thus, pattern sensitivity or the like can be checked by arbitrarily setting a pattern of test data. More specifically, leakage between adjacent memory cells, or the like can be detected by writing different data into the adjacent memory cells. Meanwhile, it takes a longer time to write or read out data to or from a memory cell than to write data into a register 60. In the above described embodiment, data are simultaneously written from the registers 60 to a plurality of memory cells connected to a single word line. In addition, data are simultaneously read out from a plurality of memory cells connected to a single word line, and the data are simultaneously compared with expected data held in the registers 60. Thus, a test based on random data can be performed for a short time. Although in the example shown in Figs. 10 to 11B, data of the same pattern are written into respective rows, data of different patterns can be written into the respective rows.

Let's consider test time required for a test based on test data of a pattern shown in Fig. 12A.

It is assumed that one cycle time is t c Time required for writing data 1101110111' in m-bit registers 60 is t c m. Time required for writing the m-bit data stored in the registers 60 into n rows in a memory array 1 is t c n. Time required for reading out data stored in all rows in the memory array 1 and comparing the same with the m-bit data stored in the registers 60 is t c n. Thus, test time T1 is as follows:

26 T1 = t - m + t n + t n c c c = t c (m + 2n) If m is equal to n, the test time T1 is 3nt c In the case of a test using a test pattern referred to as a checker board, data writing is performed as shown in Fig. 12B.

First, data "0101OP' are written in the registers 60. Then, the data I'0101011' stored in the registers 60 are written in alternate rows in the memory array 1. Thereafter, data "101010" obtained by inverting the data "010101" are written in the registers 60. Then, the data "101010" stored in the registers 60 are written in the remaining alternate rows in the memory array 1.

Expected data "010101" are written in the registers 60. Then, the data in the alternate rows in the memory Crray 1 are sequentially read out'and compared with the expected data in the registers 60. Thereafter, expective data I'1010101' are written in the registers 60. Then, the data in the remaining alternate rows in the memory array are sequentially read out and compared with the expected data in the reaister 60.

Test time T2 in the above described case is as follows:

T2 = t c - m + tc. (n/2) + t c - m + tc 0 (n/2) 27 - 1 L z t c - m + tc (n/2) t c - m + tc - (n/2) = tc (4m + 2n) If m is equal to n, the test time T2 is 6nt c On the other hand, in the conventional testing method, test time T3 is as follows:

T3 = t c (m-n) - 2 If m is equal to n, the test time T3 is 2n 2 t c The test data can be externally applied by the tester 11(see Fig. 3). In addition, a test data generator for generating test data can be provided inside of the semiconductor memory device.

Fig. 13 is a circuit diagram showing a structure o-ic- a main portion of a semiconductor memory device according to another embodiment of the present invention.

In the semiconductor memory device shown in Fig. 13, sub I/0 lines SIO1 and SIO1 are directly connected to nodes N11 and N12, respectively. In addition, a register 60 is connected to the sub I/0 line pair SIO1 and SIO1 through N channel MOS transistors Q23 and Q24. The transistors Q23 and Q24 have their gates receiving a control signal (6 from the timing generator 9 (in Fig. 3). A comparator 50 is connected to the sub I/0 line SIO1 through a transistor Q13 and the transistor Q23, and 28 - 1 connected to the sub 1/0 line SIO1 through a transistor Q14 and the transistor Q24.

In the semiconductor memory device shown in Fig. 13, when a column selecting signal Y i becomes the "H" level, the sub I/0 line pair SIO1 and S101 is directly connected to an input/output line pair I/0 and I/0. Therefore, at the time of writing data to the register 60, the data applied to the input/output line pair I/0 and I/0 is transferred to the sub 1/0 line pair SIO1 and SIO1. Thereafter, the control signal 4)6 is raised to thc--"1;" level, so that the transistors Q23 and Q24 are turned o--As a result, the data on the sub I/0 line pair S101,ii SIO1 is written into the register 60. Meanwhile, the control signal)6 is rendered active (becomes the level) at the same timings as those of control signals and 05 shown in Figs. 6 to 9.

At the time of an ordinary write operation, data ls read out onto the sub 1 /0 line pair SIO1 and SIO1 from a memory cell and then, the transistors Q23 and Q24 are turned on. Thereafter, the register 60 is activated, so that amplification of data is assisted. In this case, the register 60 serves as an intermediate amplifier for the data on the sub 1/0 line pair 5101 and S101.

On the other hand, the register 60 can have another function of holding another data without relating to amplification of data. In this case, a register portion 6 can be used as a static random memory.

In an ordinary write operation, the register 60 can be used as an intermediate amplifier for assisting amplification of data on the sub I/0 line pair SIO1 and SI01. In addition, separate data can be written in the memory cell and the register 60 without the register 60 relating to amplification of data.

Fig. 14 is a circuit diaay-aiTi sho.,..--iTicj a structure of a main portion of a semiconductor a,--C--o,--din(,- to still another embodiment of the present invention.

In the semiconductor memory device shown in Fig. 14, I/0 lines SIO1 and SIO1 are connected to nodes N11 and N12 through N channel 1.10S transistors Q25 and Q26. The transistors Q25 and Q26 their gites receiving a control signal 58 from the timing generator 9 (in Fig. 3). M.ean%%-hile, transistors Q27 and Q28 respectively correspond to the transistors Q23 and Q24 shown in Fig. 13. In addition, a control signal 47 corresponds to the control-sional (6 shown in Fig. 13.

The control signal (58 is changed at the same timings as those of the control signal 41 shown in Figs. 6 to 10.

In the semiconductor memory device shown in Fig. 14, the same function as that of the semiconductor memory device shown in Fig. 13 is achieved. However, in the - 1 4 semiconductor memory device showri in Fig. 14, data can be inputted to the nodes N11 and N12 witli the nodes Nll and N12 being disconnected from the sub 1/0 line pair SIO1 and gYb-l-. Therefore, additional capacitances connected to the nodes N11 and N12 can be decreased. As a result,' higher speed and lower power consumption are achieved.

Additionally, in a recent large capacity semiconductor memory device, a redundant circuit is generally provided for improve the, yield. Fig. 15 is a circuit diagraw.

embodiment in Fic memory device cc)iiipi--isiiig As slio.,;ii iii Fic. 3, redundant circuit comprises the spare collumin la, the spare column decoder 4a, the spare comparator 5a, aici ti-te recister 6a. In Fig.

15, structures of a coi-,iparator 50 and a register 60 connected to a sub I/0 line pair SIOn and SIOn included i a memory cell array 1 are the same as those shown in Fig.

except that a fuse Fl is connected between a transistor Q18 and a match line 14L. In addition, structures of a spare sub I/0 line pair SI0s and SI0s, the spare comparator Sa and the spare register 6a included in the spare column la are the same as those of the sub 1/0 line pair SIOn and SIOn, the comparator 50 and the register 60 except that an N channel transistor Qs1 is connected a structure taken when the 5 is anolied to the semiconductor a redundant circui-t.

31 - between a transistor Q18 and the match line ML. A sub I/0 line pair SIOn and SIOn is connected to normal memory cells in the same manner as shown in Fig. 4, and the spare sub I/0 line pair SI0s and SISs is connected to spare memory cells. The transistor Qs1 in the spare comparator 5a has its gate receiving a redundant circuit activating signal 4)x from a signal generating circuit shown in Fig. 16.

The signal generating circuit shown in Fig. 16 P channel MOS transistors Q31 and Q32, an N channel transistor Q33, an inverter G2 and a fuse F2. The transistors Q31 and Q33 have their gates receiving a cc).-ilrol signal ip-. The control signal (p is at the "L" level when the power supply is turned o-Lclc while becoming level after a la-pse of a constant- time period from t_he time when the power supply is turned on, as shown in Fia17.

fuse F2 is not blown out. Considerina a case in which the fuse F2 is not blown out, if the control signal becomes the "H" level after the power supply is turned on, the redundant circuit activating signal (bx is latched at the "L".

On the other hand, when the redundant circuit is employed, the fuse F2 is blown out. In this case, even if the control signal;-p- becomes the "H" level'after the When the redundant circuit is not employed, the - 32 -1 ( 1) power supply is turned on, the redundant circuit activating signal 4)x remains at the "ii" level.

In Fig. 15, when the redundant circuit is not employed, the fuse F1 in the comparator 50 is not blown out. In addition, since the redundant circuit activating signal 4)x remains at the "L" level, the spare comparator 5a is disconnected from the match line ML. More specifically, information from the spare memory cells are not reflected on the match line ML, so that the spare column la is beyond an object of a test.

"dd4tionally, when the redundant circuit is employed, the fuse F! in the comparator 50 is blown out. Consequently, the comparator 50 is disconnected from the match line M.L. In this case, since the redundant circuit activating sional..)x becomes the "W' level, the spare comparator 5a is connected to the match line PIL- More specifically, a po-rtion corresponding to the sub input/output line pair SIOn and SIOn is replaced with a portion corresponding to the spare sub I/0 line pair SI0s and SI0s. Therefore, the spare memory cells become an object of a test.

Thus, even in the large capacity semiconductor memory device comprising a redundant circuit, a line test can be performed.

33 - Fig. 18 is a diagram showing a structure of a semiconductor memory device according to a further embodiment of the present invention.

1 () In Fig. 18, a plurality of segment bit line pairs SB and 5B- are respectively connected to a global bit line pair GB and 15B_ through switches S11. A plurality of word lines WL are arranged intersecting with each of the segment bit line pairs SB and 5-B, memory cells MC being provided at intersections thereof. A sense amplifier SA is connected to the global bit line pair GB and U-BS. The sense amplifier SA is connected to a register 60 through N channel MOS transistors Q61 and Q62. A comparator 50 compares data on the global bit line pair GB and GB with data held in the register 60. The register 60 is connected to an input/output line pair I/0 and.I/0 through N channel MOS transistors Q63 and Q064. At the time of a normal read operation, the transistors Q61 and Q62 are turned on in response to a control signal (1. Data stored in a selected memory cell MC is read out to the global bit line pair GB and;-B through the segment bit line pair SB and SB, to be amplified by the sense amplifier SA. When the transistors Q63 and Q64 are turned on in response to a column selecting signal Y, the data amplified by the sense amplifier SA is read out to the input/output line pair I/0 and 17-0 through the register 60.

Similarly, at the time of a normal write operation, the transistors Q61 and Q62 are turned on in response to the control signal (D1. The transistors Q63 and Q64 are turned on in response to the column selecting signal Y, data applied to the input/output line pair I/0 and 1/0 is applied to the global bit line pair GB and -B through the register 60 and the sense amplifier SA. The data on the global bit line pair GB and -B is written in the selected memory cell MC through the segment bit line pair SB and At the time of a copy write operation, the transistors Q61 and Q62 are turned on in response to the control signal (tl. The data held in the reaister 60 is written in the selected memory cell MC through the global bit line pair GB and -B and the segment bit line pair SB and At the time of a line read operation, the transistors Q61 and Q62 are turned off in response to the control signal (bl. The data stored in the selected memory cell Y-C is applied to the sense amplifier SA through the segment bit line pair SB and i-B and the global bit line pair GB and B-, to be amplified. The data amplified by the sense amplifier SA is compared with the data held in the register 60 by the comparator 50. The result of the comparison is outputted to a match line ML.

- 35 C-1 1 is Fig. 19 is a diagram showing a structure of a semiconductor memory device according to a still further embodiment of the present invention.

In Fig. 19, an input/output line pair I/0 and is connected to a sense amplifier SA through N channel MOS transistors Q71 and Q72, and connected to a register 60 through N channel MOS transistors Q 73 and Q74. A comparator 50 compares data amplified by the sense amplifier SA with data held in the register 60. Structures of other portions are the same as those sho-,:n in Fig. 18.

In the semiconductor memory device shown in Fig. 19, the register 60 need not be operated in normal read and write operations. 'Other operations are the same as those in the semiconductor memory device shown in Fig. 18.

As described in the foregoing, according -to the present invention, since random data can be held in a plurality of holding means provided corresponding to a plurality of sub-input/output lines, a line test corresponding to a pattern of random or arbitrary data can be performed only by providing a few additional circuits. Thus, a test having high test sensitivity can be performed at reduced test time.

Add.itionally, at the time of normal read and write operations, the plurality of holding means can -36 i X respectively serve as alixiii-ai:y ainplifiers for the - sub-input/output lines. in addition, the plurality of holding means can be operated independent of the nornial read and write operations. t-he plurality of: holding means can perform a niultifuricti.ori, specifically as a register, as an interrnediate aniplifier and the like- Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illust.i.-%t- ioii and c,:,,iiiipl.e only and is not to be taken by way of the scope of the present invention being liiiijt.((1 only 1)y the terms of the appended claims.

Reference in made to cn-l)(ridirig patent- applAcation no. 8918830.4 from which preseni application has 1)een divided.

- 37

Claims (5)

1. A semiconductor memory device having hierarchical data bus lines including a plurality of hierarchies, comprising:

a plurality of holding means (60) provided for data bus lines included in any one of said plurality of hierarchies and each having an amplifying function of amplifying information on the corresponding data bus line and a latching function of holding the information, and a plurality of comparing means (50) provided corresponding to said plurality of holding means (60) for each comparing the information on the corresponding data bus line with the information held in the corresponding holding means (60).

2. A semiconductor memory device 1, wherein each of said plurality to one as claimed in claim of holding means (60) corresponds of a plurality of subinput/output lines for holding information corresponding to said sub-input/output line, and each of said comparing means (50) corresponds to one of a plurality of sub-input/output lines for determining whether or not the information held in the corresponding information on line.

- 39 holding means the corresponding (60) matches the sub-input/output

3. A semiconductor memory device as claimed in claim 2, wherein each of said plurality of comparing means (50) comprises first logic processing means (Q15, Q16) for performing an exclusive operation of the information held in the corresponding holding means (60) and the information on the corresponding sub-input/output line (SI01, SIO1; SI02, I02).

4. A semiconductor memory device as claimed in claim 3, wherein each of said plurality of comparing means (50) further comprises second logic processing means (Q18) for connecting an output of said first logic processing means to said match line XL in a wired-OR manner.

5. A semiconductor memory device as claimed in claim 1 substantially as discussed with reference to Figure 5,Lof the accompanying drawings.