GB2244175A - Radiation sensor - Google Patents
Radiation sensor Download PDFInfo
- Publication number
- GB2244175A GB2244175A GB9107879A GB9107879A GB2244175A GB 2244175 A GB2244175 A GB 2244175A GB 9107879 A GB9107879 A GB 9107879A GB 9107879 A GB9107879 A GB 9107879A GB 2244175 A GB2244175 A GB 2244175A
- Authority
- GB
- United Kingdom
- Prior art keywords
- filter
- radiation sensor
- diode
- lens
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 32
- 239000011521 glass Substances 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 description 4
- 239000012876 carrier material Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005293 physical law Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
A radiation sensor (9) comprises a diode (1) which is radiation sensitive in respect of ultraviolet light and on which the radiation to be detected impinges through a lens (3) and a filter (4). An interference filter (2) is disposed on the surface of the diode (1). An integral component of the radiation sensor (9) which is disposed in a housing (10) in an amplifier circuit (5) for amplifying the photoelectric current produced. Such a radiation sensor (9) is suitable for monitoring blue-burning flames of oil and gas burners in heating installations. <IMAGE>
Description
1- 7 RADIATION SENSOR 1 This invention relates to a radiation sensor. In
particular, this invention is concerned with a radiation sensor comprising a radiation- sensitive diode, a radiation filter means which is disposed in a beam path to the diode, and an amplifier circuit for amplifying the photoelectric current of the diode.
Such radiation sensors are suitable for example for flame monitoring purposes in control apparatuses in combustion installations, for example in flame monitors in heating installations.
A radiation sensor of the kind described above is known from German patent specification No. 2737090. The infra-red radiation emitted by a flame passes through the filter means and is fed to a photoelectric transducer, and the electrical signal is amplified.
The invention is more particularly concerned with the problem of providing a radiation sensor whose spectral sensitivity is adapted in optimum fashion to the optical emission of blue-burning flames of modern oil and gas burners so that false light cannot simulate a flame, while the output signal thereof is very substantially insensitive to external influences.
In accordance with the invention, the diode is responsive to ultraviolet light; the filter means comprises a lens of ultraviolet light transmitting glass, a first filter of special glass which transmits ultraviolet light and a second interference filter, such that the lens and first and second filters transmit ultraviolet light and are substantially opaque to visible and infra-red light; and the amplifier circuit is arranged together with the diode and the filter means in a hermetically sealed housing.
It is to be noted that European application EP 0296371A discloses a photodetector for ultraviolet light, comprising a photodiode covered with an interference filter, but not in combination with the other features of the present invention.
An embodiment of the invention is described, by way of example, in greater detail hereinafter with reference to the drawings in which:
Figure 1 is a diagrammatic view showing the general structure of an ultraviolet light sensor; Figure 2 is a cross-sectional view through such a sensor; Figure 3 shows spectral transmission characteristics of individual elements of the sensor; and Figure 4 shows a spectral sensitivity characteristic of the sensor.
In Figure 1 reference numeral 1 identifies an ultraviolet light photodiode as is known for example from European patent application No.
EP 0296371. Disposed on its surface is an interference filter 2 which is known from the above-mentioned European application and which has its maximum transmission at a wavelength of about 300 nm. The radiation to be detected passes through a lens 3 of ultraviolet lighttransmitting glass, a filter 4 of a special glass, and the interference filter 2, on to the diode 1. The combination of the lens 3 and filters 2, 4 transmit ultraviolet light and is substantially opaque in relation to visible and infra-red light. The very small current which is produced photoelectrically by the radiation in the diode 1 is converted into a voltage by means of an amplifier circuit 5.
The amplifier circuit 5 comprises, for example, an operational amplifier 6 with a feedback resistor 7 and optionally a capacitor 8. In addition to the inputs for connection of the diode 1, the amplifier circuit 5 has terminals for the supply voltage +UB and for earth M and an output S at which the output signal occurs. All of the aboveindicated elements form the radiation sensor 9 which is disposed within a hermetically sealed housing 10.
The operational amplifier 6 may be for example of type OP 80 from the company PMI and the resistor 7 may have a resistance for example of 1 GO. The capacitor 8 is for example of a capacitance of 100 pF but may be omitted. It reduces the band width of the amplifier so that high frequency noise and interference which occur are reduced.
Therefore it may be advantageous in some cases.
Figure 2 is a view in cross-section of a radiation sensor 9.
Arranged within the housing 10, which serves as a shielding, is a substrate wafer 11 on which are disposed the diode 1, the operational amplifier 6 and the resistor 7. Arranged above the substrate wafer 11 is a filter holder 12 which carries the filter 4. An opening in the housing 10 is closed by the lens 3. The lens 3 may be for example cast.
The housing 10 is hermetically closed so that for example gas and moisture which could adversely affect the service life of the diode 10 and operation of the amplifier circuit 5 cannot penetrate into the housing. The housing 10 is advantageously made of metal so that it provides shielding in relation to electrical fields which could interfere with the high impedance amplifier circuit 5. The filter holder 12 may contribute to further improving the shielding effect if the filter holder 12 is made from metal.
The substrate wafer 11 is advantageously ceramic, in order to provide no substantial parasitic resistances which could impede the operability of the high impedance amplifier circuit 5.
It is also advantageous if the interference filter 2 is produced in production of the diode 1 in accordance with the method described in European patent application EP 0296371, and at the same time forms the passivation layer of the diode 1. That means that the interference filter 2 is integrated on the diode 1.
The lens 3 is advantageously formed of glass of the type 'Schott 8337', whose transmission wavelength characteristic is shown in Figure 3 by reference numeral 21. Light at wavelengths of greater than 250 nm is transmitted unimpeded through the lens 3.
The filter 4 is advantageously formed of glass of type 'Schott UG 11' whose transmission wavelength characteristic is identified by reference numeral 22. As shown by the two portions of the characteristic 22, that filter glass has a quite particularly strong absorption effect in the range of 400 to 660 nm, but transmits radiation at wavelengths between 230 and 400 nm. Transmission also occurs in the range above 660 nm, which causes a problem. In order to filter out that troublesome radiation, the arrangement additionally has the interference filter 2 whose transmission characteristic is identified by reference numeral 23. The combination of that interference filter 2 with the filter 4 and with the specific doping profile of the diode 1 gives the desired properties of the sensor 9.
Figure 4 identifies at reference numeral 25 the sensitivity characteristic of the entire sensor 9, that is to say the optical series connection of lens 3, filter 4, interference filter 2 and diode 1. It will be seen that the entire curve 25 has a maximum at about 300 nm, which corresponds in optimum fashion to the radiation of blue burning flames of oil and gas burners. In comparison therewith the level of sensitivity in relation to wavelengths of greater than 400 nm. is lower by a factor of about 10-5 so that interference radiation at such wavelengths cannot cause any substantial photoelectric current and thus cannot simulate a flame. 5 Some alternative embodiments are described hereinafter. Thus it may be advantageous from the production procedure point of view for the interference filter 2 to be arranged on the filter 4 instead of on the diode 1. The interference filter 2 comprises a number of thin layers which are vapour deposited on the carrier material and which reflect or transmit light at given wavelengths, on the basis of known physical laws, depending on the respective material, number, thickness and arrangement.
It may also be advantageous in terms of cost for the lens not to be in the form of a biconvex glass body but instead to use a plane glass body and in addition to provide a holographically optical element with a lens and filter action which can be integrated on the glass body. Holographically optical elements of that kind are known. A dif fraction pattern is stored in a carrier material by means of a laser beam which is divided into two beam paths. The carrier material may be for example a photoresist layer with which the plane glass body is coated. The diffraction pattern has the properties of a conventional optical member based on refraction, such as a glass lens or a prism. That procedure produces a diffraction pattern of a convergent lens which, in the case of white light which is incident in parallel relationship, focuses the individual wavelengths at different angles and in different planes.
j i i
Claims (8)
1. A radiation sensor comprising a radiation-sensitive diode, a radiation filter means which is disposed in a beam path to the diode, and an amplifier circuit for amplifying the photoelectric current of the diode, wherein:
the diode is responsive to ultraviolet light; the filter means comprises a lens of ultraviolet light transmitting glass, a first filter of special glass which transmits 10 ultraviolet light and a second interference filter, such that the lens and first and second filters transmit ultraviolet light and are substantially opaque to visible and infra-red light; and the amplifier circuit is arranged together with the diode and the filter means in a hermetically sealed housing.
is
2. A radiation sensor according to claim 1, wherein the interference filter is disposed on the diode.
3. A radiation sensor according to claim 1, wherein the interference 20 filter is disposed on the first filter.
4. A radiation sensor according to any preceding claim, wherein the first filter is formed of special glass of the type 'Schott UG11', or material having a similar transmission characteristic.
5. A radiation sensor according to any preceding claim, wherein the lens comprises glass of the type 'Schott 8337', or material having a similar transmission characteristic.
6. A radiation sensor according to any preceding claim, wherein the housing is metallic.
7. A radiation sensor according to any preceding claim, wherein the lens is formed by a plane glass body and an integrated holographically 35 optical element with a lens and filter effect.
8. A radiation sensor, substantially as described with reference to f the drawings.
19 Published 1991 at The Patent Office, Concept House, Cardiff Road. Newport, Gwent NP9 I RH. Further copies may be obtained from Sales Branch, Unit 6. Nine Mile Point, Cwmfelinfach. Cross Keys, Newport, NPI 7HZ. Printed by Multiplex techniques ltd. St Mary Cray. Kent.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1698/90A CH680390A5 (en) | 1990-05-18 | 1990-05-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9107879D0 GB9107879D0 (en) | 1991-05-29 |
| GB2244175A true GB2244175A (en) | 1991-11-20 |
| GB2244175B GB2244175B (en) | 1994-06-15 |
Family
ID=4216512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9107879A Expired - Lifetime GB2244175B (en) | 1990-05-18 | 1991-04-12 | Radiation sensor |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH680390A5 (en) |
| DE (1) | DE4115255C2 (en) |
| FR (1) | FR2662250A1 (en) |
| GB (1) | GB2244175B (en) |
| IT (1) | IT1249250B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0585186A2 (en) * | 1992-08-28 | 1994-03-02 | Eastman Kodak Company | Semiconductor insulation for optical devices |
| US5382824A (en) * | 1992-07-16 | 1995-01-17 | Landis & Gyr Business Support Ag | Integrated circuit with an integrated color-selective photo diode and an amplifier following the photo-diode |
| EP2449590B1 (en) * | 2009-07-02 | 2015-09-02 | Candela Microsystems (S) Pte. Ltd. | Light guide array for an image sensor |
| US20180348021A1 (en) * | 2015-11-25 | 2018-12-06 | Minimax Gmbh & Co. Kg | Explosion-protected housing for means for transmitting and receiving electromagnetic radiation |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4244607A1 (en) * | 1992-12-31 | 1994-07-07 | Hl Planartechnik Gmbh | Thermoelectric radiation sensor, esp. for IR and visible light |
| DE4301177A1 (en) * | 1993-01-19 | 1994-07-21 | Telefunken Microelectron | UV radiation detector of high sensitivity |
| DE19746786C2 (en) * | 1997-10-23 | 2000-10-26 | Giersch Gmbh Oel Und Gasbrenne | Optical flame detector |
| WO2001091193A2 (en) * | 2000-05-23 | 2001-11-29 | Atmel Corporation | Integrated ic chip package for electronic image sensor die |
| DE102021130911B4 (en) | 2021-11-25 | 2024-08-29 | Bfi Automation Mindermann Gmbh | Control arrangement for detecting the presence of a flame with flame detectors for a burner and flame detector system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1177655A (en) * | 1966-03-31 | 1970-01-14 | Mining & Chemical Products Ltd | Improvements relating to Photosensitive Recieving Devices. |
| GB2107112A (en) * | 1981-09-29 | 1983-04-20 | Harold Millman Butterworth | Radiation detector |
| WO1986004735A1 (en) * | 1985-02-11 | 1986-08-14 | American Telephone & Telegraph Company | Integrated photodetector-amplifier device |
| EP0296371A1 (en) * | 1987-06-22 | 1988-12-28 | Landis & Gyr Business Support AG | Ultraviolet photodetector and production method |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1403327A (en) * | 1964-07-22 | 1965-06-18 | Landis & Gyr Sa | Sensing device for photoelectric actuator |
| CH577145A5 (en) * | 1974-10-17 | 1976-06-30 | Landis & Gyr Ag | Flame sensor for gas and oil burners - has fresnel lens filter or reflector for eliminating glow interference |
| US3976875A (en) * | 1975-06-24 | 1976-08-24 | Rca Corporation | Photodetector filter structure |
| JPS586996B2 (en) * | 1977-02-15 | 1983-02-07 | 国際技術開発株式会社 | Flame detection method |
| DE2833261B1 (en) * | 1978-07-28 | 1979-10-04 | Siemens Ag | Optical aid for enlarging the aperture of a detector |
| DE3126127A1 (en) * | 1981-07-02 | 1983-01-20 | Christoph Dr. 6500 Mainz Franz | Easy to use, portable measuring instrument for measuring direct and indirect ultraviolet radiation within the scope of technical and medical employment protection |
| US4578583A (en) * | 1984-04-03 | 1986-03-25 | The Babcock & Wilcox Company | Solid state ultraviolet flame detector |
| JPS63182528A (en) * | 1987-01-26 | 1988-07-27 | Sumitomo Electric Ind Ltd | Ultraviolet-ray illuminance measuring instrument for ultraviolet-ray irradiating device for optical fiber drawing device |
-
1990
- 1990-05-18 CH CH1698/90A patent/CH680390A5/de not_active IP Right Cessation
-
1991
- 1991-04-12 GB GB9107879A patent/GB2244175B/en not_active Expired - Lifetime
- 1991-05-10 IT ITMI911293A patent/IT1249250B/en active IP Right Grant
- 1991-05-10 DE DE4115255A patent/DE4115255C2/en not_active Expired - Lifetime
- 1991-05-16 FR FR9105932A patent/FR2662250A1/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1177655A (en) * | 1966-03-31 | 1970-01-14 | Mining & Chemical Products Ltd | Improvements relating to Photosensitive Recieving Devices. |
| GB2107112A (en) * | 1981-09-29 | 1983-04-20 | Harold Millman Butterworth | Radiation detector |
| WO1986004735A1 (en) * | 1985-02-11 | 1986-08-14 | American Telephone & Telegraph Company | Integrated photodetector-amplifier device |
| EP0296371A1 (en) * | 1987-06-22 | 1988-12-28 | Landis & Gyr Business Support AG | Ultraviolet photodetector and production method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5382824A (en) * | 1992-07-16 | 1995-01-17 | Landis & Gyr Business Support Ag | Integrated circuit with an integrated color-selective photo diode and an amplifier following the photo-diode |
| EP0585186A2 (en) * | 1992-08-28 | 1994-03-02 | Eastman Kodak Company | Semiconductor insulation for optical devices |
| EP0585186A3 (en) * | 1992-08-28 | 1995-02-08 | Eastman Kodak Co | Semiconductor insulation for optical devices. |
| EP2449590B1 (en) * | 2009-07-02 | 2015-09-02 | Candela Microsystems (S) Pte. Ltd. | Light guide array for an image sensor |
| US20180348021A1 (en) * | 2015-11-25 | 2018-12-06 | Minimax Gmbh & Co. Kg | Explosion-protected housing for means for transmitting and receiving electromagnetic radiation |
| US11821757B2 (en) * | 2015-11-25 | 2023-11-21 | Minimax Gmbh | Explosion-protected housing for means for transmitting and receiving electromagnetic radiation |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1249250B (en) | 1995-02-21 |
| GB2244175B (en) | 1994-06-15 |
| DE4115255A1 (en) | 1991-11-21 |
| ITMI911293A1 (en) | 1992-11-10 |
| FR2662250A1 (en) | 1991-11-22 |
| DE4115255C2 (en) | 2001-07-05 |
| ITMI911293A0 (en) | 1991-05-10 |
| GB9107879D0 (en) | 1991-05-29 |
| CH680390A5 (en) | 1992-08-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PE20 | Patent expired after termination of 20 years |
Expiry date: 20110411 |