GB2230137A - Electronic device with a reservoir of hydrogen - Google Patents

Electronic device with a reservoir of hydrogen Download PDF

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Publication number
GB2230137A
GB2230137A GB9006305A GB9006305A GB2230137A GB 2230137 A GB2230137 A GB 2230137A GB 9006305 A GB9006305 A GB 9006305A GB 9006305 A GB9006305 A GB 9006305A GB 2230137 A GB2230137 A GB 2230137A
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GB
United Kingdom
Prior art keywords
hydrogen
semiconductor material
reservoir
containing species
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9006305A
Other versions
GB9006305D0 (en
GB2230137B (en
Inventor
Geoffrey Dearnaley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Atomic Energy Authority
Original Assignee
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Atomic Energy Authority filed Critical UK Atomic Energy Authority
Publication of GB9006305D0 publication Critical patent/GB9006305D0/en
Publication of GB2230137A publication Critical patent/GB2230137A/en
Application granted granted Critical
Publication of GB2230137B publication Critical patent/GB2230137B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma

Abstract

A reservoir of hydrogen is provided beneath the surface of a body of semiconductor material so as to be available for thermally-activated diffusion towards, and segregation at, interface states between one region and another of the body of semiconductor material. Such a reservoir of hydrogen is made by ion implantation into the body of semiconductor material.

Description

Improvements in or relating to Electronic Devices The present invention relates to semiconductor materials and devices made therefrom.
It has become recognised that in microelectronics devices made from semiconductor materials, the interfaces between regions having different electrical characteristics may have a crucial role to play in determining the overall performance of the devices, as well as their ability to withstand irradiation. The interfaces possess defects, both as a result of microscopic vacancies and flaws in the crystal lattice of the semiconductor material, such as dislocations, and as a result of the microscopic effects of stresses arising during oxidation or ion implantation stages in the process of manufacture of the devices. The effects of these defects can be mitigated by the incorporation of hydrogen into the microelectronic devices during fabrication.
In many substances, hydrogen possesses a high mobility under thermally-activated diffusion conditions and it readily becomes trapped at regions of low electron density such as vacancies, dislocations or crack tips. Sometimes the binding energy between a hydrogen atom and such defects exceeds the chemical binding energy involved in the formation of hydrides of the material so that complexes of hydrogen and physical defects can be stable under the thermal conditions which exist in the fabrication of microelectronic devices. In particular, hydrogen can modify the electronic effect of defects which occur at the interfaces between a body of silicon and regions of silicon oxide forming parts of electronic devices. These are them are electronic interface states which can influence strongly the behaviour of the electronic devices, particularly of the variety known as CMOS devices.It is believed that the relatively high mobility of hydrogen in silicon enables it to migrate to and segregate preferentially at traps, i.e. defects at the interfaces and so lessen the electronic consequencies of dangling bonds from silicon atoms etc.
The present invention provides a process whereby a reservoir of hydrogen is provided beneath the surface of a body of semiconductor material so as to be available for thermally-activated diffusion towards and segration at interface states between one region and another of the body of semiconductor material.
According to the invention there is provided a body of semiconductor material having therein a sub-surface reservoir of hydrogen which can be released in order to become associated with other sub-surface interface states which may be produced during thermal treatments forming stages in the manufacture of an electronic device from the body of semiconductor material or during subsequent irradiation of such an electronic device.
According to the present invention in another aspect there is provided a method of producing a sub-surface reservoir of hydrogen in a semiconductor material, including the operation of subjecting the body of semiconductor material to bombardment by charged hydrogen-containing species having an energy such as to implant the hydrogen below the surface of the body of semiconductor material thereby to provide a reservior of hydrogen below the surface of the body of semi conductor material.
The charged hydrogen-containing species may be protons themselves, or more complex ions such as H2O+, OH+, NH3+, t;H2+ or NH+. The more complex ions may themselves be used to form buried layers which locally modify the electrical characteristics of the body of semiconductor material so as to isolate one region of the body of semiconductor material from another. For example, H2O+ or OH+ ions can be used to form buried layers of SiO2 in silicon, or NH3+, NH2+ or NH+ can be used to form buried layers of Si3N4, again in silicon.
In each of these cases, the implanted hydrogen is trapped at bombardment or stressinduced defects in the implanted semiconductor material and is there available for release to other trapping sites created during subsequent stages in the formation of microcircuit devices from the implanted body of semiconductor material.
A particular advantage of the present invention is that hydrogen is available from a sub-surface source and at a rate which can be controlled thermally, whereas in existing processes where the hydrogen is made available from external gaseous sources, the rate of entry of hydrogen into the semiconductor material is uncertain and can be variable.
As an example of the present invention, a dose of 1018 ions/cm2 of H2O+ ions was implanted into a body of silicon at a temperature of 5000C using conventional techniques, which it is not thought necessary to describe further as they are well-known to those skilled in the artof fabricating electronic devices. As a result, a buried layer of SiO2 was produced, having hydrogen trapped at each interface between the buried SiO2 and the silicon matrix. The body of silicon was then annealed at 11000C for an hour. Subsequent examination by the technique of forward recoil scattering using 35 MeV C1+ ions showed that although much of the hydrogen had diffused away from the Si/SiO2 interfaces to the surface of the ody of body of silicon, it was still detectable at concentrations of about 5 p.p.m.
Interface state densities between Si and SiO2, if thermally grown by diffusion, are not large and are significant at the level of about 1013/cm2. Thus, only a few parts per million of the ion implanted hydrogen are required to remain in order to be available by diffusion to decorate interface states and to modify, beneficially their electronic properties.
Should an electronic device be subjected to irradiation by energetic electromagnetic radiation or particles such as neutrons, defect states within the device can be produced. Normally these defects interfere strongly with the electronic properties of the device, but these effects are reduced if hydrogen is available for diffusion to the radiation-produced defect centres. It is the strong segregation of hydrogen which is responsible for the beneficial effects and this is a direct consequence of the production, within the semiconductor material of localised regions of low electron density.

Claims (8)

Claims
1. A body of semiconductor material having therein a sub-surface reservoir of hydrogen which can be released in order to become associated with other sub-surface interface states which may be produced during thermal treatments forming stages in the manufacture of an electronic device from the body of semiconductor material or during subsequent irradiation of such a device.
2. A method of producing a sub-surface reservoir of hydrogen in a semiconductor material, including the operation of subjecting the body of semiconductor material to bombardment by charged hydrogen-containing species having an energy such as to implant the hydrogen below the surface of the body of semiconductor material thereby to provide a reservior of hydrogen below the surface of the body of semi conductor material.
3. A method according to claim 2 wherein the hydrogen containing species is protons.
4. A method according the claim 2 wherein the wherein the hydrogen-containing species comprises an ion which includes a species which is capable of reacting with the body of semiconductor material so as to form buried layers having electrical characteristics which differ from those of the remainder of the body semiconductor material.
5. A method according to claim 4 wherein the hydrogen containing species comprises H2O+; OH+; NH3+; NH+ or NH+.
6. A method according the claim 4 or 5 wherein the body of semiconductor material is made of silicon.
7. A body of semiconductor material substantially as hereinbefore described.
8. A method of manufacturing a body of semiconductor material substantially as hereinbefore described.
GB9006305A 1989-03-31 1990-03-21 Improvements in or relating to electronic devices Expired - Fee Related GB2230137B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898907323A GB8907323D0 (en) 1989-03-31 1989-03-31 Improvements in or relating to electronic devices

Publications (3)

Publication Number Publication Date
GB9006305D0 GB9006305D0 (en) 1990-05-16
GB2230137A true GB2230137A (en) 1990-10-10
GB2230137B GB2230137B (en) 1993-03-31

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GB898907323A Pending GB8907323D0 (en) 1989-03-31 1989-03-31 Improvements in or relating to electronic devices
GB9006305A Expired - Fee Related GB2230137B (en) 1989-03-31 1990-03-21 Improvements in or relating to electronic devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB898907323A Pending GB8907323D0 (en) 1989-03-31 1989-03-31 Improvements in or relating to electronic devices

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GB (2) GB8907323D0 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012117787A1 (en) * 2011-03-03 2012-09-07 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4359367A (en) * 1980-06-25 1982-11-16 Governing Council Of The University Of Toronto Silicon-based semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4359367A (en) * 1980-06-25 1982-11-16 Governing Council Of The University Of Toronto Silicon-based semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012117787A1 (en) * 2011-03-03 2012-09-07 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
TWI469227B (en) * 2011-03-03 2015-01-11 Toshiba Kk Method of manufacturing semiconductor device
US9082822B2 (en) 2011-03-03 2015-07-14 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
GB9006305D0 (en) 1990-05-16
GB2230137B (en) 1993-03-31
GB8907323D0 (en) 1989-05-17

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990321