GB2230137B - Improvements in or relating to electronic devices - Google Patents

Improvements in or relating to electronic devices

Info

Publication number
GB2230137B
GB2230137B GB9006305A GB9006305A GB2230137B GB 2230137 B GB2230137 B GB 2230137B GB 9006305 A GB9006305 A GB 9006305A GB 9006305 A GB9006305 A GB 9006305A GB 2230137 B GB2230137 B GB 2230137B
Authority
GB
United Kingdom
Prior art keywords
relating
electronic devices
electronic
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9006305A
Other versions
GB2230137A (en
GB9006305D0 (en
Inventor
Geoffrey Dearnaley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Atomic Energy Authority
Original Assignee
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Atomic Energy Authority filed Critical UK Atomic Energy Authority
Publication of GB9006305D0 publication Critical patent/GB9006305D0/en
Publication of GB2230137A publication Critical patent/GB2230137A/en
Application granted granted Critical
Publication of GB2230137B publication Critical patent/GB2230137B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
GB9006305A 1989-03-31 1990-03-21 Improvements in or relating to electronic devices Expired - Fee Related GB2230137B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898907323A GB8907323D0 (en) 1989-03-31 1989-03-31 Improvements in or relating to electronic devices

Publications (3)

Publication Number Publication Date
GB9006305D0 GB9006305D0 (en) 1990-05-16
GB2230137A GB2230137A (en) 1990-10-10
GB2230137B true GB2230137B (en) 1993-03-31

Family

ID=10654280

Family Applications (2)

Application Number Title Priority Date Filing Date
GB898907323A Pending GB8907323D0 (en) 1989-03-31 1989-03-31 Improvements in or relating to electronic devices
GB9006305A Expired - Fee Related GB2230137B (en) 1989-03-31 1990-03-21 Improvements in or relating to electronic devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB898907323A Pending GB8907323D0 (en) 1989-03-31 1989-03-31 Improvements in or relating to electronic devices

Country Status (1)

Country Link
GB (2) GB8907323D0 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5615207B2 (en) * 2011-03-03 2014-10-29 株式会社東芝 Manufacturing method of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4359367A (en) * 1980-06-25 1982-11-16 Governing Council Of The University Of Toronto Silicon-based semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4359367A (en) * 1980-06-25 1982-11-16 Governing Council Of The University Of Toronto Silicon-based semiconductor devices

Also Published As

Publication number Publication date
GB2230137A (en) 1990-10-10
GB9006305D0 (en) 1990-05-16
GB8907323D0 (en) 1989-05-17

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990321