GB2221792A - Connections for semiconductor devices - Google Patents

Connections for semiconductor devices Download PDF

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Publication number
GB2221792A
GB2221792A GB8918192A GB8918192A GB2221792A GB 2221792 A GB2221792 A GB 2221792A GB 8918192 A GB8918192 A GB 8918192A GB 8918192 A GB8918192 A GB 8918192A GB 2221792 A GB2221792 A GB 2221792A
Authority
GB
United Kingdom
Prior art keywords
semiconductor
thermal expansion
metallic conductor
coefficient
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB8918192A
Other versions
GB2221792B (en
GB8918192D0 (en
Inventor
Colin Bright Lewis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marconi Electronic Devices Ltd
Original Assignee
Marconi Electronic Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Electronic Devices Ltd filed Critical Marconi Electronic Devices Ltd
Publication of GB8918192D0 publication Critical patent/GB8918192D0/en
Publication of GB2221792A publication Critical patent/GB2221792A/en
Application granted granted Critical
Publication of GB2221792B publication Critical patent/GB2221792B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]

Description

SCC/3420 Semiconductor Devices The present invention relates to
semiconductor devices.
In a semiconductor device, particularly a high power device, an electrode of, say, copper may be electrically connected to a semiconductor body by way of a buffer layer of molybdenum, which acts to prevent thermally induced damage to the semiconductor body arising from the large difference in coefficients of thermal expansion between the copper and the semiconductor material.
According to one aspect of the present invention in a semiconductor device in which a substantially laminar metallic conductor is bonded over a first area of one of its major surfaces to a surface of a body of a first material having a substantially different coefficient of thermal expansion to that of said metallic conductor, there is bonded over an area of the other surface of said laminar conductor which lies opposite said first area a body of a second material having a coefficient of thermal expansion similar to that of said first material.
According to another aspect of the invention in a semiconductor device a substantially laminar metallic conductor Is bonded between a surface of a body of semiconductor material and a body of material having a coefficient of thermal expansion similar to that of said semiconductor material.
According to another aspect of the invention in a semiconductor device comprising a body of semiconductor material to which at least one electrical connection is made by way of a substantially laminar metallic conductor, a portion of said laminar metallic conductor is bonded on one major face to said body of semiconductor material and on the other major face to a body of material having a coefficient of thermal expansion similar to that of the said semiconductor material.
A semiconductor device in accordance with the present invention will now be described by way of example with reference to the accompanying drawing, of which:- Figure 1 shows diagramatically a known form of device, and Figure 2 shows diagramatically the device in accordance with the invention.
Referring first to Figure 1, which shows a known form of rectifier diode device, a semiconductor body 1 is secured by soldering to a copper stud 2, which forms one electrode of the device, by way of an intermediate body 3 of a material such as molybdenum, which has a coefficient of thermal expansion similar to that of the semiconductor body 1. Another body 4 of molybdenum is interposed between and soldered to the semiconductor body 1 and a copper stem 5 which forms the other electrode of the device. The similar temperature coefficients of expansion of the molybdenum bodies 3 and 4 and the semiconductor body 1 serve to prevent thermally induced damage to the semiconductor body arising from the much higher coefficient of expansion of the copper stud 2 and the copper stem 5.
Referring now to Figure 2 the thermal expansion of the contact-making portion 6 of the copper stem 5 is restrained by directly bonding on the back face of that portion 6, that is the face opposite or remote from the contact-marking face, a body of a material such as alumina. This has no effect on the electrical properties of the contact-making portion 6 but, due to the tenacity of the bond and the stiffness of the body of alumina, it reduces the actual thermal expansion of the copper at that portion to a value close enough to that of the semiconductor body 1 to permit the portion 6 to be 1.
1 soldered directly to plating on the surface of the semiconductor body. The direct contact from the copper ensures excellent current spreading into the whole contact face of the semiconductor body and obviates an expensive molybdenum component.
Semiconductor bodies (not shown) may be soldered directly to copper conductors bonded to a substrate of a material having good electrical isolation and good thermal conduction, such as sapphire or alumina, to provide connection substantially free of thermal fatigue. Alumina bodies may be bonded on the back faces of any copper bridging contacts between semiconductor bodies mounted on a substrate or between semiconductors and the substrate or as means of making electrical fatigue free contacts to the substrate.
In manufacture a sub-assembly of copper/alumina is made first and then soldered as a component to the semiconductor body. It will be appreciated that ceramics or materials other than alumina may be used, providing they have a suitable coefficient of thermal expansion and are stiff enough to restrain expansion of the copper contacts.

Claims (4)

1. A semiconductor device in which a substantially laminar metallic conductor is bonded over a first area of one of its major surfaces to a surface of a body of a first material having a substantially different coefficient of thermal expansion to that of said metallic conductor, wherein there is bonded over an area of the other surface of said laminar conductor which lies opposite said first area a body of a second material having a coefficient of thermal expansion similar to that of said first material.
2. A semiconductor device wherein a substantially laminar metallic conductor is bonded between a surface of a body of semiconductor material and a body of material having a coefficient of thermal expansion similar to that of said semiconductor material.
3. A semiconductor device comprising a body of semiconductor material to which at least one electrical connection is made by way of a substantially laminar metallic conductor, wherein a portion of said laminar metallic conductor is bonded on one major face to said body of semiconductor material and on the other major face to a body of material having a coefficient of thermal expansion similar to that of the said semiconductor material.
4. A semiconductor device substantially as hereinbefore described with reference to; Figure 2 of the accompanying drawing.
Published 1990 adhePatentOffice. State House,66,71 IlighHolborn. LondonWC1R4TP. Further copies maybe obtainedfromThe Patent office. Wes Branch. St Mary Cray. Orpington. Kei.t BR5 3F.D. Printed by WALIplex techniques ltd. St Mary Cray. Kent. Con- 1,87
GB8918192A 1988-08-10 1989-08-09 Electrical connections for semiconductor devices Expired - Fee Related GB2221792B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB888818957A GB8818957D0 (en) 1988-08-10 1988-08-10 Semiconductor devices

Publications (3)

Publication Number Publication Date
GB8918192D0 GB8918192D0 (en) 1989-09-20
GB2221792A true GB2221792A (en) 1990-02-14
GB2221792B GB2221792B (en) 1992-02-12

Family

ID=10641884

Family Applications (2)

Application Number Title Priority Date Filing Date
GB888818957A Pending GB8818957D0 (en) 1988-08-10 1988-08-10 Semiconductor devices
GB8918192A Expired - Fee Related GB2221792B (en) 1988-08-10 1989-08-09 Electrical connections for semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB888818957A Pending GB8818957D0 (en) 1988-08-10 1988-08-10 Semiconductor devices

Country Status (2)

Country Link
DE (1) DE3926238C2 (en)
GB (2) GB8818957D0 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2296304A (en) * 1994-12-20 1996-06-26 Brierley B Pre-cast concrete box culvert

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049981A (en) * 1990-10-19 1991-09-17 At&T Bell Laboratories Heat sink for electronic circitry

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB914839A (en) * 1960-06-23 1963-01-09 Siemens Ag A semi-conductor arrangement
GB1004020A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Improvements in or relating to the mounting of electrical components
WO1983000949A1 (en) * 1981-09-01 1983-03-17 Motorola Inc Improved glass bonding means and method
GB2149573A (en) * 1983-11-05 1985-06-12 Mitsubishi Electric Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB914839A (en) * 1960-06-23 1963-01-09 Siemens Ag A semi-conductor arrangement
GB1004020A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Improvements in or relating to the mounting of electrical components
WO1983000949A1 (en) * 1981-09-01 1983-03-17 Motorola Inc Improved glass bonding means and method
GB2149573A (en) * 1983-11-05 1985-06-12 Mitsubishi Electric Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2296304A (en) * 1994-12-20 1996-06-26 Brierley B Pre-cast concrete box culvert
GB2296304B (en) * 1994-12-20 1998-12-09 Brierley B Concrete pre-cast box culvert section and method of installing same

Also Published As

Publication number Publication date
GB8818957D0 (en) 1988-09-14
DE3926238C2 (en) 1998-12-24
DE3926238A1 (en) 1990-02-15
GB2221792B (en) 1992-02-12
GB8918192D0 (en) 1989-09-20

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050809