GB2200766A - X-ray reflective mask and system for image formation with use of the same - Google Patents
X-ray reflective mask and system for image formation with use of the sameInfo
- Publication number
- GB2200766A GB2200766A GB08727566A GB8727566A GB2200766A GB 2200766 A GB2200766 A GB 2200766A GB 08727566 A GB08727566 A GB 08727566A GB 8727566 A GB8727566 A GB 8727566A GB 2200766 A GB2200766 A GB 2200766A
- Authority
- GB
- United Kingdom
- Prior art keywords
- same
- image formation
- reflective mask
- ray reflective
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
- G03F7/2039—X-ray radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61071970A JPS62229836A (en) | 1986-03-28 | 1986-03-28 | Reflection type x-ray mask |
JP61074695A JPS62230022A (en) | 1986-03-31 | 1986-03-31 | X-ray projection exposure device |
PCT/JP1987/000177 WO1987006028A2 (en) | 1986-03-28 | 1987-03-24 | X-ray reflective mask and system for image formation with use of the same |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8727566D0 GB8727566D0 (en) | 1987-12-31 |
GB2200766A true GB2200766A (en) | 1988-08-10 |
GB2200766B GB2200766B (en) | 1990-03-07 |
Family
ID=27300823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8727566A Expired GB2200766B (en) | 1986-03-28 | 1987-03-24 | A system for x-ray projection using a reflective mask |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2200766B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2911848A1 (en) * | 1978-03-27 | 1979-10-04 | Vlsi Technology Res Ass | ARRANGEMENT FOR THE FORMATION OF PATTERNS |
EP0055077A2 (en) * | 1980-12-23 | 1982-06-30 | Kabushiki Kaisha Toshiba | System for transferring a fine pattern onto a target |
JPS60173551A (en) * | 1984-02-20 | 1985-09-06 | Hideki Matsumura | Pattern transferring method by reflecting projection of light such as x rays or the like |
-
1987
- 1987-03-24 GB GB8727566A patent/GB2200766B/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2911848A1 (en) * | 1978-03-27 | 1979-10-04 | Vlsi Technology Res Ass | ARRANGEMENT FOR THE FORMATION OF PATTERNS |
EP0055077A2 (en) * | 1980-12-23 | 1982-06-30 | Kabushiki Kaisha Toshiba | System for transferring a fine pattern onto a target |
JPS60173551A (en) * | 1984-02-20 | 1985-09-06 | Hideki Matsumura | Pattern transferring method by reflecting projection of light such as x rays or the like |
Non-Patent Citations (3)
Title |
---|
APPLIED PHYSICS LETTERS, VOLUME 45, NO. 1, 1 JULY 1984, AMERICAN INSTITUTE OF PHYSICS, (NEW YORK, US) PAGES 3-5 * |
IBM TECHNICAL DISCLOSURE BULLETIN, VOLUME 16, NO. 9 FEBRUARY 1974, PAGES 3121-3122 * |
PATENT ABSTRACTS OF JAPAN, VOLUME 10, NO. 19 (P-423)(2076), 24 JANUARY 1986; & JP-A-60 173 551, 6 SEPTEMBER 1985 * |
Also Published As
Publication number | Publication date |
---|---|
GB8727566D0 (en) | 1987-12-31 |
GB2200766B (en) | 1990-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19960324 |