GB2188777A - Light emitting element arrays - Google Patents

Light emitting element arrays Download PDF

Info

Publication number
GB2188777A
GB2188777A GB8706900A GB8706900A GB2188777A GB 2188777 A GB2188777 A GB 2188777A GB 8706900 A GB8706900 A GB 8706900A GB 8706900 A GB8706900 A GB 8706900A GB 2188777 A GB2188777 A GB 2188777A
Authority
GB
United Kingdom
Prior art keywords
row
terminals
light emitting
electrodes
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8706900A
Other versions
GB8706900D0 (en
Inventor
Tsuguo Shirado
Masashi Fuse
Mokoto Tomokoyori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Publication of GB8706900D0 publication Critical patent/GB8706900D0/en
Publication of GB2188777A publication Critical patent/GB2188777A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Led Devices (AREA)

Description

SPECIFICATION Light emitting element arrays The present invention relates to light emitting element arrays for use in page printers for example. It is an object of the present invention to provide an improved light emmiting diode array. The present invention is characterised in that at least portions of electrodes for supply of power for the terminals in the second row adjacent to the terminals in the first row are covered with an insulating material. Thus no short-circuit will be created even if bonded wires extend outside the terminals in the first row. A light-emmiting diode array embodying the invention will now be described, by way of example, with reference to the accompying diagrammatic drawings in which: Figure 1 is a plan view of a light emitting diode array embodying the present invention; Figure 2 is a cross-sectional view of the array of Fig. 1; Figure. 3 is a plan view of a previously proposed light emitting diode array; and Figure 4 is a cross-sectional view of the conventional array. Figs. 3 and 4 show a previously proposed light emitting diode array. As shown a chip 1 is made of N-type indirect transition crystal with an N-side common electrode 2 on the overall lower surface of the chip. P-type areas 3 are arranged embedded in a straight line longitudinally through chip 1. A layer 4 of an insulating material covers the overall top surface of chip 1 and is formed by sputtering or the like.P-type electrodes 5a in a first row are connected to P-type areas 3 and has terminals 6a in a first row formed at ends of the electrodes 5a. P-side electrodes 5b in a second row are connected to P-type areas 3 and having terminals 6b in a second row formed at ends of the electrodes 5b. The terminals 6a and 6b in the first and second rows are arranged in staggered relationship so as not to come into contact with each other. They have wires (not shown) bonded thereto for recieving supply of electric power. When the terminals are supplied with electric power, the boundaries between P-type areas 3 and chip 1 become light emitting elements 7 to emit light towards the upper surface of chip 1. With this light emmiting diode array, however, there is the problem that when the wires are bonded to the terminals 6a in the first row, the wires may extend outside the terminals 6a to create short-circuits with adjacent P-type electrodes 5b in the second row if the accuracy of the pitches is inaccurate. Parts in Figs. 1 and 2 similar to those in Figs. 3 and 4 are similarly referenced. The array shown in Figs. 1 and 2 includes a chip made of N-type indirect transition crystal with an N-side common electrode 2 on the overall lower surface of the chip. P-type areas 3 are arranged ambedded in a straight line longitudinally through chip 1. A layer 4 of an insulating material covers the overall top surface of chip 1 and is formed by sputtering or the like. P-type electrodes 5a in a first row are connected to the P-type areas 3 and have terminals 6a in a first row formed at ends of the electrodes 5a. P-type electrodes 5b in a second row are connected to P-type areas 3 and have terminals 6b in a second row formed at the ends of the electrodes 5b. The terminals 6a and 6b in the first and second row are arranged in staggered relationship so as not to come into contact with each other. The respective boundaries between P-type areas 3 and chip 1 will become light emitting sections 7. A layer 8 covers those portions of the P-type electrodes in the second row adjacent to the terminals in the first row. The covering layer 8 has a width which can completely cover at least terminals 6a in the first row. It is formed belt-like by sputtering or the like so as to extend longitudinally through chip 1 and then removed away by etching or the like at portions 8a where wires are to be bounded. Since, in this process, those portions of P-side electrodes 5b in the second row adjacent to terminals 6a in the first row are covered with the insulating material, wires will create no short-circuits with P-type electrodes 5b in the second row when bonded to terminals 6a in the first row even if the wires may extend slightly outside the terminals 6a in the first row. As described above, at least those portionns of the power supply electrodes for the terminals in the second row adjacent to the terminals in the first row are covered with an insulating material, so that wires bonded to the terminals in the first row will create no short-circuits with the power supply electrodes for the terminals in the second row even if the wires are slightly inaccurately bonded to the terminals in the first row. Thus no bad articles are manufactured, the yield is improved, and the manufacuring cost is reduced.

Claims (4)

1. A light emitting element array comprising a plurality of light emitting elements arranged in a straight line; and a plurality of external terminals of electrodes for supply of power to said light emitting elements, said terminals being arranged in first and second rows in staggered relationship to each other along said plurality of light emitting elements; at least portions of said electrodes for said terminals in said second row close to said terminals in said first row being covered with an insulating material.
2. An array according to Claim 1, wherein said terminals in said first row and said elec- trodes for supply of power for said second row are covered by a common strip-like layer of an insulating material, and wherein said layer is removed at positions of said terminals in the first row for electrical connection.
3. An array according to Claim 2, wherein said common strip-like layer is formed by sputtering.
4. A light emitting diode array substantially as hereinbefore described with reference to Figs. 3 and 4 of the accompanying diagrammatic drawings.
GB8706900A 1986-04-02 1987-03-24 Light emitting element arrays Withdrawn GB2188777A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4989686U JPS62162857U (en) 1986-04-02 1986-04-02

Publications (2)

Publication Number Publication Date
GB8706900D0 GB8706900D0 (en) 1987-04-29
GB2188777A true GB2188777A (en) 1987-10-07

Family

ID=12843782

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8706900A Withdrawn GB2188777A (en) 1986-04-02 1987-03-24 Light emitting element arrays

Country Status (3)

Country Link
JP (1) JPS62162857U (en)
DE (1) DE3710820A1 (en)
GB (1) GB2188777A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677970B1 (en) * 1998-02-20 2004-01-13 Sanyo Electric Co., Ltd. Light-emitting diode array and optical print head

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1211498A (en) * 1969-03-05 1970-11-04 Standard Telephones Cables Ltd Semiconductor switching arrangement
US3812406A (en) * 1970-08-11 1974-05-21 Philips Corp Light emitting diode device for displaying characters
GB1440274A (en) * 1972-12-28 1976-06-23 Tokyo Shibaura Electric Co Display device using light-emitting semiconductor elements
EP0125666A2 (en) * 1983-05-11 1984-11-21 Honeywell Inc. An improved method of manufacturing flat panel backplanes, display transistors and displays made thereby

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147889A (en) * 1978-02-28 1979-04-03 Amp Incorporated Chip carrier
JPS5944058B2 (en) * 1979-12-27 1984-10-26 璋 伊東 Hot air tableware disinfection cabinet
JPS60198873A (en) * 1984-03-23 1985-10-08 Mitsubishi Electric Corp Light-emitting diode array
JPS6188575A (en) * 1984-10-08 1986-05-06 Hitachi Cable Ltd Led array

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1211498A (en) * 1969-03-05 1970-11-04 Standard Telephones Cables Ltd Semiconductor switching arrangement
US3812406A (en) * 1970-08-11 1974-05-21 Philips Corp Light emitting diode device for displaying characters
GB1440274A (en) * 1972-12-28 1976-06-23 Tokyo Shibaura Electric Co Display device using light-emitting semiconductor elements
EP0125666A2 (en) * 1983-05-11 1984-11-21 Honeywell Inc. An improved method of manufacturing flat panel backplanes, display transistors and displays made thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677970B1 (en) * 1998-02-20 2004-01-13 Sanyo Electric Co., Ltd. Light-emitting diode array and optical print head

Also Published As

Publication number Publication date
GB8706900D0 (en) 1987-04-29
JPS62162857U (en) 1987-10-16
DE3710820A1 (en) 1987-10-15

Similar Documents

Publication Publication Date Title
EP0087842B1 (en) Infra-red radiation detectors and their manufacture
US7271421B2 (en) Light-emitting diode array
US7034340B2 (en) Light-emitting diode array
US6013870A (en) Thin-film solar module
EP2418699A2 (en) Electrode configuration for a light emitting diode
US20050274957A1 (en) LED packaging structure
EP0234276A2 (en) Insulated gate type field effect transistor
DE69132358T2 (en) SOLAR CELL
JP4233280B2 (en) LED array
GB2188777A (en) Light emitting element arrays
EP0881686A3 (en) LED array and LED printer head
US4533783A (en) AC solar cell with alternately generated pn junctions
US6919583B2 (en) End surface light-emitting element having increased external light emission efficiency and self-scanning light-emitting element array using the same
US5018159A (en) Divided electrode type semiconductor laser device
JPH0680856B2 (en) Semiconductor laser
US5166700A (en) Thermal print head
JP2542431B2 (en) Light emitting diode print head
JPH03192779A (en) Light emitting diode
JPH06163980A (en) Light-emitting diode array device
JP2001094155A5 (en)
KR900008911A (en) Light emitting diode array and manufacturing method thereof
JPS647681A (en) Distributed reflex semiconductor laser
JP3322576B2 (en) Optical print head
JPS6153754A (en) Hybrid integrated circuit device
KR920000329B1 (en) Light emitting device array

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)