GB2188043A - Water scavengers for hydrochloric acid streams - Google Patents

Water scavengers for hydrochloric acid streams Download PDF

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Publication number
GB2188043A
GB2188043A GB08706444A GB8706444A GB2188043A GB 2188043 A GB2188043 A GB 2188043A GB 08706444 A GB08706444 A GB 08706444A GB 8706444 A GB8706444 A GB 8706444A GB 2188043 A GB2188043 A GB 2188043A
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Prior art keywords
water
hci
sici4
stream
chloride
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GB2188043B (en
GB8706444D0 (en
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Glen Mcpherson Tom
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Hercules LLC
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Hercules LLC
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/26Drying gases or vapours
    • B01D53/28Selection of materials for use as drying agents
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/01Chlorine; Hydrogen chloride
    • C01B7/07Purification ; Separation
    • C01B7/0706Purification ; Separation of hydrogen chloride
    • C01B7/0718Purification ; Separation of hydrogen chloride by adsorption

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Gases (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Catalysts (AREA)
  • Exhaust Gas Treatment By Means Of Catalyst (AREA)
  • Treating Waste Gases (AREA)

Abstract

The water content of an HCl gas stream is reduced to less than 1 ppm by contacting the gas stream with a chloride of silicon or a metal having a valence of at least four, e.g. SiCl4, WCl6, TiCl4 or ZrCl4. The chloride is preferably immobilized on a solid support.

Description

SPECIFICATION Water scavengers for hydrochloric acid streams This invention relates to a process for the removal of trace amounts of water from gaseous hydrochloric acid. This invention especially relates to the use of certain chlorides as scavengers to reduce the water content of HCI gas streams to less than one part per million (ppm) The process of this invention for reducing the water content of HCI gas streams to less than one part per million comprises contacting the HCI gas stream with a chloride of silicon or a metal having a valence of at least four. The chloride is preferably immobilized on a solid support.
Ordinarily it is difficult to remove trace amounts of water from HCl, since HCI is more reactive than water and is hygroscopic. However, silicon and certain high valency metals react more easily with oxide ligands than with chloride ligands. Such metals include, for example, Ti, Zr and W. Typical reactions include the following: WCI6+3H20---WO3+6HCI (1) SiCI4+2H2O---SiO2+4HCI (2) Other suitable chlorides include, but are not limited to, TiCI4 and ZrCI4.
In some applications it will be advantageous to use the scavengers of this invention at a low temperature that is above the boiling point of HCI. The equilibrium constants will be larger for the removal of water if the temperature is low. This effect is important for scavengers having a low equilibrium constant at room temperature, e.g., WCI6. Another effect of low temperature is the lowering of the vapor pressure of liquid scavengers such as SiCI4 and TiCI4, which have a high vapor pressure at room temperature. The high vapor pressure may lead to the emission of metal or silicon compounds into the purified HCI stream.
Solid scavengers such as WCI6 and ZrCI4 can be adsorbed on a solid support such as a macroreticulate styrene-divinylbenzene polymer to increase the surface area of the scavenger.
The vapor pressure of liquid chloride scavengers may be decreased without lowering the temperature below room temperature by immobilizing the chloride on a solid support having free -OH groups or OM' groups on its surface, where M' is an alkali or alkaline earth metal. Such supports include high surface area inorganic supports such as alumina and silica. Polymers containing a functional group that is reactive with the chloride, e.g., polyvinyl alcohol, may also be used as the support. The immobilization takes place according to the following reaction, using SiCI4 as an example: SiCI4 + HOMO3---CI3SiOMO3 + HCI (3) where HOMO3 represents a metal oxide or hydroxide surface. SiCI4 immobilized on alumina is the preferred scavenger.The liquid chloride scavengers can be reacted with the solid support directly, or they can be heated to vaporize them before contact with the support. If the support is treated with a gaseous chloride, the support with the immobilized chloride on its surface should subsequently be treated with hot HCI gas to drive off any loosely bound chloride.
For applications in which the emission of metal or silicon compounds into the purified HCl stream would be detrimental, it is advisable to heat the alumina with the immobilized chloride on its surface to a temperature of about 190"C for 17 hours under nitrogen before contact with the HCI stream. This heat treatment will drive off any weakly bound metal or silicon chlorides. The capacity of the chloride-alumina scavenger is typically about 2 liters of water vapor per liter of bed. The purified gas stream can subsequently be passed through a post-trap containing activated alumina to remove any remaining traces of silicon or metal compounds.For example, after passing through a heat-treated SiCI4/AI203 scavenger and an activated alumina post-trap, the level of silicon in the purified HCI stream is typically less than 0.05 ppm (measured by atomic adsorption after passing the HCI stream through 100 ml water). The alumina used in the posttrap is preferably heated in a stream of nitrogen at about 190 C for 1 7 hours and cooled before use.
The water content of the purified gas stream is less than one ppm, and preferably less than 0.5 ppm.
The removal of moisture from an HCI gas stream to minimize oxidation reactions is important in the semiconductor industry. For example, moisture-free HCI is needed for cleaning ovens used in the manufacture of semiconductor wafers to prevent subsequent contamination of wafers, and for the etching of silicon wafers to prevent the formation of oxides on the surface of the wafers.
Anhydrous gaseous HCI is used for the conversion of ferrosilicon (FeSi) to HSiCI3, which in turn is used for the manufacture of silicon wafers. The prevention of corrosion of tubing used for transporting HCi is also an important consideration.
Example 1 Acidic Awl203 (WoelmRA, Akt.t, manufactured by Woelm Pharma GmbH & Co.) is packed into a stainless steel 150 ml sample cylinder. The alumina is dried under a stream of N2 at 200"C for 10 hours.
A silicon tetrachloride-functionalized Al2O3 scavenger is prepared as follows. The bed of dried Awl203 is flooded with a 30 volume percent solution of SiCI4 in hexane and the SiCI4 is left in contact with the bed for at least one hour. The bed is then washed with four bed volumes of sparged hexane. The sample is dried at 65"C under a stream of N2 to drive off the hexane. The functionalized alumina is then held at 190"C for 17 hours to drive off volatile components.
An aliquot of the heat-treated scavenger is placed in a 4" polymerization tube. N2 is passed through the sample. No acidity is detected with tricolor pH paper. N2 is then bubbled through water in a 4" polymerization tube and the water-laden gas is passed through the scavenger. The off-gas becomes acidic, indicating that the SiCI4 is capable of removing moisture from the gas stream according to equation (2).
Example 2 A silicon tetrachloride-functionalized Awl203 scavenger is prepared and tested as described in Example 1, except that the dried alumina is flooded with neat SiCI4 rather than a solution of SiCI in hexane. The reaction mixture is allowed to stand for at least one hour before heating to drive off volatile components.
Example 3 Acidic alumina is packed into a one-gallon stainless steel reactor. The alumina is dried overnight under a stream of N2 at 190"C.
A silicon tetrachloride-functionalized aluminia scavenger is prepared as follows. Silicon tetrachloride (250 ml) is transferred via a cannula into a bubbler heated to a temperature of 57"C.
Nitrogen is passed through the heated SiCI4 until all of the SiCI4 has evaporated and has passed through the alumina in the reactor. HCI gas that has been heated by passing through a preheating coil is then passed through the SiCI4-functionalized alumina for five hours to drive off any loosely bound SiCI4. The scavenger is then held at a temperature of 190"C under a stream of nitrogen for at least eight hours to remove excess HCI.
Example 4 The capacity of SiCI4-functionalized alumina scavengers to remove water from a gas stream is measured by the following procedure. N2 is bubbled through water held at 24"C. The vapor pressure of water at this temperature is 24 mm Hg. The wet N2 is passed at a rate of 200 ml per minute through a 30 ml sample of the scavenger in a polymerization tube. The off-gas from the tube containing the scavenger is passed through 200 ml of water. The gas is fed through a Teflon tube since a stainless steel line produces grounding problems with the pH electrode. The H+ concentration of the water is measured with a pH meter as a function of time. The flow rate of the wet N2 is 0.302 standard liters per minute. Knowing the volume of the water trap, the volume of the bed and the final proton concentration of the water trap, the capacity of the bed can be calculated. The capacities of the various forms of the SiCI4/AI203 scavengers are as follows: Scavenger Capacity (liters ,0 vapor/liter of bed) SiC14 in hexane 1.95 SiC14 in hexane, 2.6 heat treated Neat SiCl4 5.5 Neat SiC14, heat 2 treated Example 5 A stream of dry HCI gas is mixed with nitrogen containing a known amount of moisture so that the HCI stream contains 5 ppm water. The HCI stream is then passed under one atmosphere pressure through a 500 ml column containing the heat-treated SiCl4/Al203 scavenger prepared as described in Example 1.The flow rate of the HCI gas through the column is 160 volumes of gas per volume of bed per hour and the process is carried out at room temperature.
The moisture level of the exit gas is measured at 1/2 hour intervals for a two hour period. This procedure is repeated using HCI gas streams containing 13 and 37 ppm water. The procedure is again repeated using a gas stream containing 20 ppm water, except that the flow rate is increased to 760 volumes of HCI per volume of bed per hour. In each case the moisture content of the HCI stream at the end of the two hour period is less than 0.1 ppm. The moisture content of the HCI stream was measured as described in Flaherty et al., Anal. Chem. 1986, 58, 1903-1904.
Example 6 Macroreticulate styrene/divinylbenzene (PSDVB) polymer (Amberlite XAD4, manufactured by Rohm and Haas) is washed with water and the fines are removed by decantation. The polymer is washed in turn with 3 bed volumes of water, methanol, isopropyl alcohol and hexane. Air is passed through the bed for about two hours to remove the bulk of the solvents. The air-dried resin is packed into a stainless steel reactor and dried under a stream of nitrogen at 110 C for 10-12 hours.
A supported WCI6 scavenger is prepared as follows. The dried PSDVB (25 g) is mixed with WCI6 (2.52 g) in 50 ml sparged toluene. A nitrogen steam is passed through the mixture at 110 C overnight to remove toluene.
PSDVB having WCI6 adsorbed on its surface is transferred to a buret for testing. Dry nitrogen is passed through the PSDVB-WCI6 scavenger. No acidity is detected with tricolor pH paper. N2 is then bubbled through water in a 4" polymerization tube and the water-laden gas is passed through the scavenger. The off-gas becomes acidic, indicating that the WCI6 is capable of removing moisture from the gas stream according to equation (1).

Claims (4)

1. A process for reducing the water content of an HCI gas stream to less than 1 ppm comprising contacting the gas stream with a chloride of silicon or a metal having a valence of at least four.
2. The process of claim 1 wherein the chloride is SiCI4.
3. The process of claim 2 wherein the SiCI4 is immobilized by reaction with a solid support.
4. The process of claim 3 wherein gaseous SiCI4 is reacted with an alumina support.
GB8706444A 1986-03-19 1987-03-18 Water scavengers for hydrochloric acid streams Expired GB2188043B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84144086A 1986-03-19 1986-03-19
US868387A 1987-01-29 1987-01-29

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GB8706444D0 GB8706444D0 (en) 1987-04-23
GB2188043A true GB2188043A (en) 1987-09-23
GB2188043B GB2188043B (en) 1989-11-15

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JP (1) JPH0753221B2 (en)
KR (1) KR950006513B1 (en)
CA (1) CA1291860C (en)
DE (1) DE3709084C2 (en)
FR (1) FR2595958B1 (en)
GB (1) GB2188043B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283965A2 (en) * 1987-03-24 1988-09-28 Novapure Corporation Process and composition for drying of gaseous hydrogen halides
US5958356A (en) * 1997-11-05 1999-09-28 Air Products And Chemicals, Inc. Method for removal of moisture from gaseous HCl
WO2001012541A1 (en) * 1999-08-17 2001-02-22 The Dow Chemical Company Production of anhydrous hydrogen chloride from byproduct or waste chlorinated materials
US6221132B1 (en) 1999-10-14 2001-04-24 Air Products And Chemicals, Inc. Vacuum preparation of hydrogen halide drier
US7288201B2 (en) 1997-07-29 2007-10-30 Entegris, Inc. Methods for removing moisture from hydrogen halides

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD150736A1 (en) * 1980-04-14 1981-09-16 Gerhard Appel METHOD FOR DRYING CHLORINE HYDROGEN AND CHLORINE
JPS57104995A (en) * 1980-12-22 1982-06-30 Casio Computer Co Ltd Keyboard circuit for adding touch response

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283965A2 (en) * 1987-03-24 1988-09-28 Novapure Corporation Process and composition for drying of gaseous hydrogen halides
EP0283965A3 (en) * 1987-03-24 1990-07-25 Advanced Technology Materials, Inc. Process and composition for drying of gaseous hydrogen halides
US7288201B2 (en) 1997-07-29 2007-10-30 Entegris, Inc. Methods for removing moisture from hydrogen halides
US5958356A (en) * 1997-11-05 1999-09-28 Air Products And Chemicals, Inc. Method for removal of moisture from gaseous HCl
WO2001012541A1 (en) * 1999-08-17 2001-02-22 The Dow Chemical Company Production of anhydrous hydrogen chloride from byproduct or waste chlorinated materials
US6221132B1 (en) 1999-10-14 2001-04-24 Air Products And Chemicals, Inc. Vacuum preparation of hydrogen halide drier

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Publication number Publication date
DE3709084C2 (en) 1995-09-21
GB2188043B (en) 1989-11-15
KR950006513B1 (en) 1995-06-16
GB8706444D0 (en) 1987-04-23
CA1291860C (en) 1991-11-12
JPS62254822A (en) 1987-11-06
FR2595958A1 (en) 1987-09-25
FR2595958B1 (en) 1991-06-14
DE3709084A1 (en) 1987-09-24
JPH0753221B2 (en) 1995-06-07
KR870008782A (en) 1987-10-20

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Effective date: 20040318