GB2179791A - Hybrid circuit packages - Google Patents
Hybrid circuit packages Download PDFInfo
- Publication number
- GB2179791A GB2179791A GB8620275A GB8620275A GB2179791A GB 2179791 A GB2179791 A GB 2179791A GB 8620275 A GB8620275 A GB 8620275A GB 8620275 A GB8620275 A GB 8620275A GB 2179791 A GB2179791 A GB 2179791A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- layer
- conductor
- base element
- conductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cookers (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Thermistors And Varistors (AREA)
Abstract
A semi-conductor device comprises at least one semi-conductor chip (3) in a sealed housing (1, 4, 5). The housing contains a layer (6) of resistive material located adjacent the chip, the layer having a permittivity similar to that of free space so as to absorb microwave energy and to enable the device to be used in a microwave environment.
Description
SPECIFICATION
Hybrid circuit packages
The present invention concerns semi-conduc
tor devices, and particularly, though not exclu
sively, to semi-conductor devices of the type
known as hybrid circuit packages. Typically a
hybrid circuit package consists of a rectangu
lar base element made from a suitable metal
or ceramics material having a raised rim. A
semi-conductor chip is mounted on a central
portion within the base element and bonded
to conductive metal tracks deposited around
the central portion, the tracks being available
for subsequent connection to other circuit ele
ments. Frequently the semi-conductor chip so
housed is covered by a lid bonded to the rim
of the base element to provide a hermetically
sealed package.
Devices of this kind can be used in mi
crowave applications and it has been dis
covered that energy reflected from the lid can
have a deleterious effect on the performance
of the semi-conductor device. Microwaves
typically have a frequency between 1-100 gi
gahertz.
The present invention has for one object to
provide hybrid circuit packages which are suit
able for use in a microwave environment.
Accordingly, from one aspect, the present
invention consists in a semi-conductor device
having at least one chip, and a layer of resis
tive material mounted adjacent the chips
which layer has a permittivity selected to be
similar to that of free space so as to absorb
microwave energy rather than to reflect it.
Preferably the layer is made from a thick
film resistive material. The resistive material
may be Ruthenium Oxide. A suitable thickness
for the layer is between 5 and 15 microns.
In order that the present invention may be
more readily understood an embodiment
thereof will now be described by way of
example and with reference to the accom
panying drawing, which is a section through a
hybrid circuit package which incorporates the
present invention.
Referring now to the drawing, the basic
components of the hybrid circuit package
comprise a base element 1 which is rectangu
lar in plan and which has a peripheral rim 2
which is stepped in cross-section and which
carries an array of deposited conductive ele
ments for connecting external circuit elements
to a semi-conductor chip 3 mounted within
the base element 1. The edge connectors of
the chip 3 are bonded in known manner at 8
to the conductive elements on the base ele
ment 1. The base element 1 can be made
from a number of suitable materials of which
the most commonly used is a ceramic.
The package is completed by a lid 4 nor
mally made from the same material as the
base element 1, that is it will in usual practise be either ceramic or metal. The lid 4 has a downwardly extending rim 5 which when the package is complete is sealed to the rim 2 of the base element.
The interior of the lid 4 is coated with a layer 6 of resistive material. This layer 6 is arranged to have the same permittivity as that of free space. The result of this is that when the lid is in place and the package is in operation in a microwave environment and microwave energy incident on the lid will be absorbed rather than reflected. The nature and composition of the layer 6 are thus defined by its purpose and there are a number of suitable "lossy" materials which can be used to give the desired absorbtion characteristic. One such composition could be a thermoplastic potting material interspersed with iron filings. However the most appropriate material is a layer of a thick film resistive material, Ruthenium Oxide.
This is printed and co-fired onto the lid during lid assembly. A suitable range for the thickness of the layer 6 is between 10-15 microns. If the thickness is less then there may not be total absorbtion of the microwave energy, whilst once total absorbtion has been achieved there is no point in increasing the layer thickness.
The package is completed by bonding the rim 5 of the lid 4 to the rim 2 of the base element 1. The two rims can be welded, soldered or glued together to make a hermetically sealed package.
Claims (7)
1. A semi-conductor device comprising at least one semi-conductor chip, and a layer of resistive material mounted adjacent the chips, which layer has a permittivity selected to be similar to that of free space so as to absorb microwave energy rather than to reflect it.
2. A semi-conductor device as claimed in
Claim 1 wherein the layer is made from a thick film resistive material.
3. A semi-conductor device as claimed in
Claim 2, wherein the layer is between 5 and 15 microns thick.
4. A semi-conductor device as claimed in either of Claims 2 or 3, wherein the material of the layer is Ruthenium Oxide.
5. A semi-conductor device as claimed in any one of the preceding claims wherein the device comprises a base element having a peripheral rim which is stepped in cross-section and carries an array of deposited conductive elements for connecting external circuit elements to said semi-conductor chip, and a lid sealed to the rim of the base element.
6. A device as claimed in Claim 5 wherein the base element and the lid are both of a ceramic material.
7. A semi-conductor device substantially as hereinbefore described with reference to and as shown in the accompanying drawing.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8520907A GB8520907D0 (en) | 1985-08-21 | 1985-08-21 | Hybrid circuit packages |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8620275D0 GB8620275D0 (en) | 1986-10-01 |
| GB2179791A true GB2179791A (en) | 1987-03-11 |
| GB2179791B GB2179791B (en) | 1988-11-09 |
Family
ID=10584091
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8520907A Pending GB8520907D0 (en) | 1985-08-21 | 1985-08-21 | Hybrid circuit packages |
| GB8620275A Expired GB2179791B (en) | 1985-08-21 | 1986-08-20 | Semi-conductor packages |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8520907A Pending GB8520907D0 (en) | 1985-08-21 | 1985-08-21 | Hybrid circuit packages |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0232401A1 (en) |
| JP (1) | JPS63500628A (en) |
| GB (2) | GB8520907D0 (en) |
| WO (1) | WO1987001240A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4038168C2 (en) * | 1990-11-30 | 1998-09-24 | Daimler Benz Ag | Method of manufacturing a multichip module |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4259684A (en) * | 1978-10-13 | 1981-03-31 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Packages for microwave integrated circuits |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2506520A1 (en) * | 1981-05-19 | 1982-11-26 | Thomson Csf | ENCAPSULATION BOX FOR POWER SEMICONDUCTOR OPERATING IN A FREQUENCY RANGE OF 2 TO 20 GHZ |
| JPS58446U (en) * | 1981-06-25 | 1983-01-05 | 富士通株式会社 | Hybrid integrated circuit device |
| FR2538617B1 (en) * | 1982-12-28 | 1986-02-28 | Thomson Csf | ENCAPSULATION BOX FOR POWER SEMICONDUCTOR WITH IMPROVED INPUT-OUTPUT ISOLATION |
| JPS59126665A (en) * | 1983-01-10 | 1984-07-21 | Hitachi Ltd | Thick film hybrid integrated circuit |
-
1985
- 1985-08-21 GB GB8520907A patent/GB8520907D0/en active Pending
-
1986
- 1986-08-20 WO PCT/GB1986/000494 patent/WO1987001240A1/en not_active Application Discontinuation
- 1986-08-20 GB GB8620275A patent/GB2179791B/en not_active Expired
- 1986-08-20 JP JP50457986A patent/JPS63500628A/en active Pending
- 1986-08-20 EP EP19860905328 patent/EP0232401A1/en not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4259684A (en) * | 1978-10-13 | 1981-03-31 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Packages for microwave integrated circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8620275D0 (en) | 1986-10-01 |
| EP0232401A1 (en) | 1987-08-19 |
| GB8520907D0 (en) | 1985-09-25 |
| GB2179791B (en) | 1988-11-09 |
| WO1987001240A1 (en) | 1987-02-26 |
| JPS63500628A (en) | 1988-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |