GB2149206B - Improvements in semiconductor devices - Google Patents

Improvements in semiconductor devices

Info

Publication number
GB2149206B
GB2149206B GB08425665A GB8425665A GB2149206B GB 2149206 B GB2149206 B GB 2149206B GB 08425665 A GB08425665 A GB 08425665A GB 8425665 A GB8425665 A GB 8425665A GB 2149206 B GB2149206 B GB 2149206B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08425665A
Other versions
GB2149206A (en
GB8425665D0 (en
Inventor
Dr James Henry Stephen
Dr Geoffrey Dearnaley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inmos Corp
Original Assignee
Inmos Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inmos Corp filed Critical Inmos Corp
Publication of GB8425665D0 publication Critical patent/GB8425665D0/en
Publication of GB2149206A publication Critical patent/GB2149206A/en
Application granted granted Critical
Publication of GB2149206B publication Critical patent/GB2149206B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Electrodes Of Semiconductors (AREA)
GB08425665A 1983-10-13 1984-10-11 Improvements in semiconductor devices Expired GB2149206B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB838327486A GB8327486D0 (en) 1983-10-13 1983-10-13 Semiconductor devices

Publications (3)

Publication Number Publication Date
GB8425665D0 GB8425665D0 (en) 1984-11-14
GB2149206A GB2149206A (en) 1985-06-05
GB2149206B true GB2149206B (en) 1987-04-08

Family

ID=10550159

Family Applications (2)

Application Number Title Priority Date Filing Date
GB838327486A Pending GB8327486D0 (en) 1983-10-13 1983-10-13 Semiconductor devices
GB08425665A Expired GB2149206B (en) 1983-10-13 1984-10-11 Improvements in semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB838327486A Pending GB8327486D0 (en) 1983-10-13 1983-10-13 Semiconductor devices

Country Status (2)

Country Link
JP (1) JPS6098620A (en)
GB (2) GB8327486D0 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028554A (en) * 1986-07-03 1991-07-02 Oki Electric Industry Co., Ltd. Process of fabricating an MIS FET
JPS6370516A (en) * 1986-09-12 1988-03-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming metal contact
US6468899B1 (en) * 2001-06-27 2002-10-22 Agere Systems Guardian Corp. Contactless local interconnect process utilizing self-aligned silicide

Also Published As

Publication number Publication date
JPS6098620A (en) 1985-06-01
GB2149206A (en) 1985-06-05
GB8327486D0 (en) 1983-11-16
GB8425665D0 (en) 1984-11-14

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee