GB2146566A - Electrostatic bonding - Google Patents

Electrostatic bonding Download PDF

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Publication number
GB2146566A
GB2146566A GB08324893A GB8324893A GB2146566A GB 2146566 A GB2146566 A GB 2146566A GB 08324893 A GB08324893 A GB 08324893A GB 8324893 A GB8324893 A GB 8324893A GB 2146566 A GB2146566 A GB 2146566A
Authority
GB
United Kingdom
Prior art keywords
glass
substrate
bonding
silicon
process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB08324893A
Other versions
GB2146566B (en
GB8324893D0 (en
Inventor
J C Greenwood
D W Satchell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Standard Telephone and Cables PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB08324893A priority Critical patent/GB2146566B/en
Publication of GB8324893D0 publication Critical patent/GB8324893D0/en
Publication of GB2146566A publication Critical patent/GB2146566A/en
Application granted granted Critical
Publication of GB2146566B publication Critical patent/GB2146566B/en
Application status is Expired legal-status Critical

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00Assembling of devices or systems from individually processed components
    • B81C3/001Bonding of two components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/03Bonding two components
    • B81C2203/038Bonding techniques not provided for in B81C2203/031 - B81C2203/037

Abstract

A silicon body, e.g. a transducer 11 is provided with a surface coating 12 of a glass. The glass is ground and polished to a thickness of 5 to 100 microns and the assembly is then electrostatically bonded to a silicon substrate 13. <IMAGE>

Description

SPECIFICATION Electrostatic bonding This invention relates to electrostatic bonding processes, and in particular to a process for bond ing a silicon body to a substrate.

Silicon transducers such as those described in our published specifications No. 2115551 (J.C.

Greenwood 44) and No. 2095911 (J.C. Greenwood 40) are finding increasing use in a variety of applications. For many of these applications it is necessary to mount the transducer in a housing and this in turn entails bonding the transducer to a substrate. Conventionally this is done with an adhesive such as an epoxy resin but problems have been encountered in the form of thermal mismatch between the adhesive and the transducer.

According to the invention there is provided a process for bonding a silicon body to a silicon substrate, the method including applying a glass to at least a portion of the body, grinding and polishing the glass to a thickness between 5 and 100 microns and electrostatically bonding the glass coated body to the substrate.

As the bond is effectively silicon to silicon the problem of thermal mismatch is overcome.

Embodiments of the invention will now be described with reference to the accompanying drawings in which the single figure is a cross sectional view of a transducer prior to bonding to a substrate.

Referring to the drawing, a silicon transducer 11 is coated on a surface with a layer 12 of a glass composition, typically a borosilicate glass. This glass layer is ground and polished and the assembly is then placed in contact with a silicon substrate 13.

The transducer and substrate are heated to a temperature below the softening point of the glass.

For a borosilicate glass a temperature of 400 to 5000C is suitable. An electric potential of 800 to 1200 volts is applied between the transducer and substrate, the substrate being negative, relative to the transducer. After a short time a permanent electrostatic bond is effected.

The glass may be applied to the transducer either by electrostatic bonding or by firing of a glass frit. Where electrostatic bonding is used the glass is ground and polished to a thickness of 5 to 100 microns prior to bonding to the substrate. If however the glass is applied as a glaze it is ground and polished to a thickness not less than 5 microns, typically 10 to 15 microns before bonding to the substrate is effected.

1. A process for bonding a silicon body to a silicon substrate, the method including applying a glass to at least a portion of the body, grinding and polishing the glass to a thickness between 5 and 100 microns and electrostatically bonding the glass coated body to the substrate.

2. A process as claimed in claim 1, wherein the glass is electrostatically bonded to the silicon body.

3. A process as claimed in claim 2, wherein the glass is ground and polished to a thickness of 10 to 15 microns prior to bonding to the substrate.

4. A process as claimed in any one of claims 1 to 3, wherein the glass is a borosilicate glass.

5. A process as claimed in claim 4, wherein the glass is heated to a temperature of 400 to 500'C during the bonding process.

6. A process as claimed in any one of claims 1 to 5, wherein a potential of 800 to 1200 volts is applied across the glass layer to effect bonding, the substrate being negative relative to the silicon body.

7. A process for bonding a silicon body to a silicon substrate substantially as described herein with reference to the accompanying drawings.

8. A transducer assembly prepared by a process as claimed in any one of claims 1 to 7.

**WARNING** end of DESC field may overlap start of CLMS **.

Claims (8)

**WARNING** start of CLMS field may overlap end of DESC **. SPECIFICATION Electrostatic bonding This invention relates to electrostatic bonding processes, and in particular to a process for bond ing a silicon body to a substrate. Silicon transducers such as those described in our published specifications No. 2115551 (J.C. Greenwood 44) and No. 2095911 (J.C. Greenwood 40) are finding increasing use in a variety of applications. For many of these applications it is necessary to mount the transducer in a housing and this in turn entails bonding the transducer to a substrate. Conventionally this is done with an adhesive such as an epoxy resin but problems have been encountered in the form of thermal mismatch between the adhesive and the transducer. According to the invention there is provided a process for bonding a silicon body to a silicon substrate, the method including applying a glass to at least a portion of the body, grinding and polishing the glass to a thickness between 5 and 100 microns and electrostatically bonding the glass coated body to the substrate. As the bond is effectively silicon to silicon the problem of thermal mismatch is overcome. Embodiments of the invention will now be described with reference to the accompanying drawings in which the single figure is a cross sectional view of a transducer prior to bonding to a substrate. Referring to the drawing, a silicon transducer 11 is coated on a surface with a layer 12 of a glass composition, typically a borosilicate glass. This glass layer is ground and polished and the assembly is then placed in contact with a silicon substrate 13. The transducer and substrate are heated to a temperature below the softening point of the glass. For a borosilicate glass a temperature of 400 to 5000C is suitable. An electric potential of 800 to 1200 volts is applied between the transducer and substrate, the substrate being negative, relative to the transducer. After a short time a permanent electrostatic bond is effected. The glass may be applied to the transducer either by electrostatic bonding or by firing of a glass frit. Where electrostatic bonding is used the glass is ground and polished to a thickness of 5 to 100 microns prior to bonding to the substrate. If however the glass is applied as a glaze it is ground and polished to a thickness not less than 5 microns, typically 10 to 15 microns before bonding to the substrate is effected. CLAIMS
1. A process for bonding a silicon body to a silicon substrate, the method including applying a glass to at least a portion of the body, grinding and polishing the glass to a thickness between 5 and 100 microns and electrostatically bonding the glass coated body to the substrate.
2. A process as claimed in claim 1, wherein the glass is electrostatically bonded to the silicon body.
3. A process as claimed in claim 2, wherein the glass is ground and polished to a thickness of 10 to 15 microns prior to bonding to the substrate.
4. A process as claimed in any one of claims 1 to 3, wherein the glass is a borosilicate glass.
5. A process as claimed in claim 4, wherein the glass is heated to a temperature of 400 to 500'C during the bonding process.
6. A process as claimed in any one of claims 1 to 5, wherein a potential of 800 to 1200 volts is applied across the glass layer to effect bonding, the substrate being negative relative to the silicon body.
7. A process for bonding a silicon body to a silicon substrate substantially as described herein with reference to the accompanying drawings.
8. A transducer assembly prepared by a process as claimed in any one of claims 1 to 7.
GB08324893A 1983-09-16 1983-09-16 Electrostatic bonding Expired GB2146566B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08324893A GB2146566B (en) 1983-09-16 1983-09-16 Electrostatic bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08324893A GB2146566B (en) 1983-09-16 1983-09-16 Electrostatic bonding

Publications (3)

Publication Number Publication Date
GB8324893D0 GB8324893D0 (en) 1983-10-19
GB2146566A true GB2146566A (en) 1985-04-24
GB2146566B GB2146566B (en) 1986-11-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
GB08324893A Expired GB2146566B (en) 1983-09-16 1983-09-16 Electrostatic bonding

Country Status (1)

Country Link
GB (1) GB2146566B (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5009690A (en) * 1990-03-09 1991-04-23 The United States Of America As Represented By The United States Department Of Energy Method of bonding single crystal quartz by field-assisted bonding
DE4243612A1 (en) * 1991-12-25 1993-07-01 Rohm Co Ltd Anodic bonding of two substrates - comprises forming electroconductive film on one substrate and glass film on other substrate, joining and applying voltage
EP0594182A2 (en) * 1992-10-22 1994-04-27 Canon Kabushiki Kaisha Anode bonding method and acceleration sensor obtained by using the anode bonding method
EP0580283A3 (en) * 1992-06-05 1995-08-23 Seiko Epson Corp Ink jet head and method of manufacturing thereof
US5912684A (en) * 1990-09-21 1999-06-15 Seiko Epson Corporation Inkjet recording apparatus
US6113218A (en) * 1990-09-21 2000-09-05 Seiko Epson Corporation Ink-jet recording apparatus and method for producing the head thereof
US6164759A (en) * 1990-09-21 2000-12-26 Seiko Epson Corporation Method for producing an electrostatic actuator and an inkjet head using it
US6168263B1 (en) 1990-09-21 2001-01-02 Seiko Epson Corporation Ink jet recording apparatus
WO2003029159A1 (en) * 2001-10-03 2003-04-10 Qinetiq Limited Coated optical components
CN108328912A (en) * 2018-04-08 2018-07-27 武汉理工大学 A kind of anode linkage method and device for vacuum glass sealing-in

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1180908A (en) * 1966-11-17 1970-02-11 English Electric Co Ltd Improvements in or relating to processes for Forming an Insulating Coating on Silicon, and to Coated Silicon
GB1189601A (en) * 1967-01-12 1970-04-29 Siemens Ag A Method of Affixing a Strain Gauge to a Specimen Which is to be Tested.
GB1267465A (en) * 1969-10-28 1972-03-22 Itt Transducer assembly and method of making the same
GB1512486A (en) * 1975-05-14 1978-06-01 Itt Method of making a transducer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1180908A (en) * 1966-11-17 1970-02-11 English Electric Co Ltd Improvements in or relating to processes for Forming an Insulating Coating on Silicon, and to Coated Silicon
GB1189601A (en) * 1967-01-12 1970-04-29 Siemens Ag A Method of Affixing a Strain Gauge to a Specimen Which is to be Tested.
GB1267465A (en) * 1969-10-28 1972-03-22 Itt Transducer assembly and method of making the same
GB1512486A (en) * 1975-05-14 1978-06-01 Itt Method of making a transducer

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5009690A (en) * 1990-03-09 1991-04-23 The United States Of America As Represented By The United States Department Of Energy Method of bonding single crystal quartz by field-assisted bonding
US6168263B1 (en) 1990-09-21 2001-01-02 Seiko Epson Corporation Ink jet recording apparatus
US6164759A (en) * 1990-09-21 2000-12-26 Seiko Epson Corporation Method for producing an electrostatic actuator and an inkjet head using it
US6117698A (en) * 1990-09-21 2000-09-12 Seiko Epson Corporation Method for producing the head of an ink-jet recording apparatus
US6113218A (en) * 1990-09-21 2000-09-05 Seiko Epson Corporation Ink-jet recording apparatus and method for producing the head thereof
US5912684A (en) * 1990-09-21 1999-06-15 Seiko Epson Corporation Inkjet recording apparatus
DE4243612A1 (en) * 1991-12-25 1993-07-01 Rohm Co Ltd Anodic bonding of two substrates - comprises forming electroconductive film on one substrate and glass film on other substrate, joining and applying voltage
EP0580283A3 (en) * 1992-06-05 1995-08-23 Seiko Epson Corp Ink jet head and method of manufacturing thereof
US5673476A (en) * 1992-10-22 1997-10-07 Canon Kabushiki Kaisha Anode bonding method for selected regions
EP0594182A3 (en) * 1992-10-22 1997-09-24 Canon Kk Anode bonding method and acceleration sensor obtained by using the anode bonding method
EP0594182A2 (en) * 1992-10-22 1994-04-27 Canon Kabushiki Kaisha Anode bonding method and acceleration sensor obtained by using the anode bonding method
WO2003029159A1 (en) * 2001-10-03 2003-04-10 Qinetiq Limited Coated optical components
CN108328912A (en) * 2018-04-08 2018-07-27 武汉理工大学 A kind of anode linkage method and device for vacuum glass sealing-in

Also Published As

Publication number Publication date
GB2146566B (en) 1986-11-26
GB8324893D0 (en) 1983-10-19

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PCNP Patent ceased through non-payment of renewal fee