GB2143853A - Deposition - Google Patents
Deposition Download PDFInfo
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- GB2143853A GB2143853A GB08418549A GB8418549A GB2143853A GB 2143853 A GB2143853 A GB 2143853A GB 08418549 A GB08418549 A GB 08418549A GB 8418549 A GB8418549 A GB 8418549A GB 2143853 A GB2143853 A GB 2143853A
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- Prior art keywords
- composition
- radical anion
- hydrocarbon
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- compound
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- 230000008021 deposition Effects 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 35
- 150000005838 radical anions Chemical class 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 18
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims abstract description 15
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 15
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003125 aqueous solvent Substances 0.000 claims abstract description 9
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 235000010290 biphenyl Nutrition 0.000 claims abstract description 5
- 239000004305 biphenyl Substances 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 12
- 239000003638 chemical reducing agent Substances 0.000 claims description 10
- 229910000765 intermetallic Inorganic materials 0.000 claims description 8
- -1 polycyclic hydrocarbon Chemical class 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 4
- 238000006722 reduction reaction Methods 0.000 claims 4
- 229910052783 alkali metal Inorganic materials 0.000 claims 2
- 150000001340 alkali metals Chemical class 0.000 claims 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 125000003367 polycyclic group Chemical group 0.000 claims 2
- 150000002739 metals Chemical group 0.000 abstract description 10
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 7
- 230000001464 adherent effect Effects 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 229910052708 sodium Inorganic materials 0.000 abstract description 7
- 239000011734 sodium Substances 0.000 abstract description 7
- 239000000843 powder Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 4
- 229910020968 MoSi2 Inorganic materials 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 abstract description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 125000005575 polycyclic aromatic hydrocarbon group Chemical group 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 19
- 238000000151 deposition Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 229940032159 propylene carbonate Drugs 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 101100328886 Caenorhabditis elegans col-2 gene Proteins 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000003115 supporting electrolyte Substances 0.000 description 1
- DPKBAXPHAYBPRL-UHFFFAOYSA-M tetrabutylazanium;iodide Chemical compound [I-].CCCC[N+](CCCC)(CCCC)CCCC DPKBAXPHAYBPRL-UHFFFAOYSA-M 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A method for the electroless deposition of metals or semiconductors in form of a powder or in form of an adherent layer on different substrates comprises reducing a compound of the material to be deposited by means of a radical anion. The compound of the material to be deposited may be dissolved in a non-aqueous solvent the radical anion, which may be of a hydrocarbon, also dissolved in the non-aqueous solvent. The deposited material can be silicon for photovoltaic energy conversion purposes, MoSi2 as a wear resistant coating or tantalum as a corrosion resistant coating. Preferred radical anions are formed by the action of a reducing metal such as sodium on polycyclic aromatic hydrocarbons such as naphthalene, biphenyl and phenanthrene.
Description
SPECIFICATION
Deposition
The present invention relates to the electroless deposition of substances like metals or semiconductors from non-aqueous solvents, for example as powders or especially adherent layers on substrates.
Presently, there are both electrochemical and chemical (electroless) methods of depositing from aqueous solutions metals on substrates, especially in the form of adherent layers. These methods give good results for metals which are stable in such solutions, for example gold, nickel, chromium and many others. Such methods however do not work for metals which are not stable in water.
It is of high technical and economic interest to be able to deposit metals or semiconductors on appropriate substrates. Examples include silicon for photovoltaic energy conversion purposes, molybdenum, aluminium and tantalum as a corrosion resistant coating and also intermetallic compounds such as MoSi2 as wear resistant coatings.
It is possible to deposit such metals or semiconductors by electrolytic reduction in fused salts or in certain non-aqueous solvents. Such methods are described e.g. in the Journal of the Electrochemical Society 128 1 708-1 711(1981) or in
U.S. Patent 3,990,953. These methods of electrolytic reduction have however the disadvantage that the substrates on which the substance is to be deposited must be electrical conductors and must be connected to a current source. However, if the substance to be deposited is a bad conductor, such as silicon, the deposition speed is reduced, which is a further inconvenience. If the electrolytic deposition is carried out in a molten salt, operation at a high temperature is necessary, which is another disadvantage.
The electroless deposition of metals out of a solution of one of its compounds, such as the well known electroless deposition of nickel, avoids such inconveniences. This method consists of adding to a solution containing a compound of the to be deposited substance a reducing agent so that the metal precipitates as a powder or as an adherent layer on a substrate. Such a method for the production of pure silicon is described in the German Patent DBP 1,071,680. As a solvent, one of the well known non-aqueous solvents in which a silicon compound such as SiCI4 is soluble can be used. As a reducing agent, a dispersion of sodium is used. In this way, silicon powder can be produced. The powder must be separated from the sodium dispersion in an additional step.The use of a non-soluble reduction agent has therefore the disadvantage of introducing an additional step in the process of metal winning.
The deposition of the metal in form of a well adherent layer on a substrate using an insoluble reducing agent does not seem to be possible.
The present invention overcomes or at least mitigates these difficulties. It has been found that one can deposit in the desired form substances such as silicon, molybdenum, tantalum, chromium, cobalt and many others, as well as intermetallic compounds, out of solutions of their compounds in non-aqueous solvents by using radical anions as a reducing agent. The invention may therefore be viewed broadly as the use of a radical anion as a reducing agent in an electroless deposition process or as an electroless deposition process in which the reducing agent is a radical anion. The method can be realised by contacting a reducible precursor of the material with a radical anion. In the case of depositing an element, which may be a metal or a semiconductor, the reducible precursor will be a compound of the element.In the case of depositing an intermetallic compound, the reducible precursor will be a compound or a mixture of compounds of the elements of the intermetallic compound. The radical anions are soluble in non-aqueous solvents. Preferred radical anions are those formed from aromatic polycyclic hydrocarbons such as naphthalene, biphenyl and phenanthrene. To obtain solutions of such radical anions, one adds sodium or another reducing agent to a non-aqueous solution of the hydrocarbon. Alternatively, one electrolyses a non-aqueous solution of the hydrocarbon to which a supporting electrolyte, such as a tetraalkylammonium halide, has been added.
A method according to the present invention comprises mixing a non-aqueous solution of a compound of a substance to be deposited with a non-aqueous solution of a radical anion and contacting a substrate on which the substance is to be deposited in form of an adherent layer with the mixture. The substrate can be of a wide variety of materials, such as metals, glass, ceramic, sapphire, plastics, PTFE and resins.
Another method of the invention comprises mixing a non-aqueous solution of the compounds and the anion radical without contacting a substrate into the mixture. In that way one obtains the substance in form of powder.
The invention also provides an electroless deposition composition comprising a reducible precursor of a depositable material and a radical anion.
The following examples illustrate the invention.
EXAMPLE 1
A closed reactor vessel flushed with dry argon, contains a 0.5 molar solution of SiHCl3 in propylene-carbonate, in which copper substrates are immersed. To the solution is added a 0.05 molar solution of naphthalene in propylene carbonate which contains solid sodium. After mixing, a silicon layer of about 5 Mm thickness is deposited on the substrates.
EXAMPLE 2
A closed reactor vessel, flushed with dry nitrogen, contains a 0.1 molar solution of biphenyl in dimethyl-formamide, which for 1 hour was in contact with a dispersion of sodium and has been filtered thereafter. In this solution steel substrates are immersed. A 0.1 molar solution of
MoCI5 in dimethylformamide is added. After mixing, an adherent layer of molybdenum is deposited on the steel substrates.
EXAMPLES 3A-3D A reactor vessel as described above contains a solution of Col2 (0.05 molar) and naphthalene (0.1 molar) in acetonitrile, in which a substrate of copper (Example 3A) nickel (Example 3B), aluminium (Example 3C) or aluminium base alloy (Example 3D) is immersed. After lithium is added to the solution and stirring it, a layer of cobalt is deposited on the substrate. This particular exemplified method is not always advantageous because the reduced metal can also deposit on the solid reducing metal. Other, similar substrates could be used and another reducing metal, apart from lithium, could be used.
EXAMPLES 4A 4F The procedure of each of Examples 1, 2 and 3A to 3D was followed except that in the place of the compounds in the above mentioned Examples MoCls and SiC14 (both 0.1 molar) are used. The deposit on the substrates consists then of MoSi2.
Examples 4A and 4B correspond to Examples 1 and 2 and Examples 4C to 4F correspond to
Examples 3A to 3D.
EXAMPLE 5
The reaction vessel consists of a flat bottomed, rectangular channel, having the substrates on opposite sides. Through this channel flows a solution of SiHCI3 (0.1 molar) and naphthalene (0.1 molar), which latter has been in contact with solid sodium before entering the channel.
The flow of the solution through the channel is such that the concentrations of SiHCI3 and the naphthalene radical anion at the end of the channel are not less than 70% to 80% of the concentrations at their entry of the channel. The deposit on the substrate consisted then of silicon of regular quality.
EXAMPLES 6A-6M The procedure of each of Examples 1 , 2, 3A to 3D, 4A to 4F and 5 is followed, except that the substrates are made from glass. Examples 6A and 6B correspond to Examples 1 and 2, Examples 6C to 6F correspond to Examples 3A to 3D, Examples 6G to 6L correspond to Examples 4A to 4F and
Example 6M corresponds to Example 5.
EXAMPLES 7A-7M The procedure of each of Examples 1, 2, 3A to 3D, 4A to 4F and 5 is followed, except that the substrates are made from aluminium oxide. Other ceramics can be used. Examples 7A and 7B correspond to Examples 1 and 2, Examples 7C to 7F correspond to Examples 3A to 3D, Examples 7G to 7L correspond to Examples 4A to 4F and
Example 7M corresponds to Example 5.
EXAMPLES 8A-8M The procedure of each of Examples 1, 2, 3A to 3D, 4A to 4F and 5 is followed, except that the substrates are made from polypropylene. Other polymers can be used. Examples 8A and 8B correspond to Examples 1 and 2, Examples 8C to 8F correspond to Examples 3A to 3D, Examples 8G to 8L correspond to Examples 4A to 4F and
Example 8M corresponds to Example 5.
EXAMPLES 91--9Lll The procedure of each of Examples 1,2, 3A to 3D, 4A to 4F 5, 6A to 6M, 7A to 7M and 8A to 8M is followed except that one adds tetrabutylammonium iodide (0.1 molar) to the solution which contains the hydrocarbon, and that this solution is eiectrolysed between two platinum electrodes before being added to the solution of the metal compound. A diaphragm is placed between the anode and cathode in a conventional way to prevent elemental iodine penetrating into the reducing solution.Example 91 corresponds to
Example 1, Example 911 corresponds to Example 2, Examples 911 to 9VI correspond to Examples 3A to 3D, Examples 9VII to 9Xll correspond to
Examples 4A to 4F, Example 9Xlll corresponds to
Example 5, Examples 9XIV to 9XXVI correspond to Examples 6A to 6M, Examples 9XXVII to 9XXXIX corresponds to Examples 7A to 7M and
Examples 9XL to LII corresponds to Examples 8A to 8M.
It is to be understood that these examples are not limiting. It is an advantage of the present invention that various parameters of the method can be adapted for the desired purpose. This concerns especially the nature and the concentration of the hydrocarbon which forms the reducing radical anion, the nature of the solvent, the nature and concentration of the metal compound, or the mixture of metal compounds in order to deposit different metals simultaneously or their alloys or intermetallic phases.
Claims (34)
1. The use of a radical anion as a reducing agent in an electroless deposition process.
2. An electroless deposition process in which the reducing agent is a radical anion.
3. A process for the electroless deposition of a depositable material, the method comprising contacting a reducible precursor of the material with a radical anion.
4. A process as claimed in Claim 3, wherein the depositable material is an element and the reducible precursor is a compound of the element.
5. A process as claimed in Claim 4, wherein the element is a metal.
6. A process as claimed in Claim 4, wherein the element is a semiconductor.
7. A process as claimed in Claim 3, wherein the depositable material is an intermetallic compound and the reducible precursor comprises a compound or compounds of the elements of the intermetallic compound.
8. A process as claimed in any one of Claims 3 to 7, wherein the reducible precursor and the radical anion are dissolved in the same solvent.
9. A process as claimed in any one of Claims 1 to 8, wherein the radical anion is a radical anion of a hydrocarbon.
10. A process as claimed in Claim 9, wherein the hydrocarbon is aromatic.
1 A process as claimed in Claim 10, wherein the aromatic hydrocarbon is polycyclic.
12. A process as claimed in Claim 11, wherein the polycyclic hydrocarbon is naphthalene, biphenyl or phenanthrene.
13. A process as claimed in any one of Claims 9 to 12, wherein the radical anion is formed by reduction of the hydrocarbon by a reducing metal
14. A process as claimed in Claim 13, wherein the reducing metal is an alkali metal.
1 5. A process as claimed in any one of Claims 9 to 12, wherein the radical anion is formed by electro-chemical reduction of the hydrocarbon.
16. A process as claimed in Claim 13 or 15, wherein in the formation of the radical anion, the hydrocarbon is dissolved in a non-aqueous solvent.
1 7. An electroless deposition composition comprising a reducible precursor of a depositable material and a radical anion.
18. A composition as claimed in Claim 17, wherein the depositable material is an element and the reducible precursor is a compound of the element.
19. A composition as claimed in Claim 18, wherein the element is a metal.
20. A composition as claimed in Claim 18, wherein the element is a semiconductor.
21. A composition as claimed in Claim 17, wherein the depositable material is an intermetallic compound and the reducible precursor comprises a compound or compounds of the elements of the intermetallic compound.
22. A composition as claimed in any one of
Claims 1 7 to 21, wherein the reducible precursor and the radical anion are dissolved in the same solvent.
23. A composition as claimed in any one of
Claims 1 7 to 22, wherein the radical anion is a radical anion of a hydrocarbon.
24. A composition as claimed in Claim 23, wherein the hydrocarbon is aromatic.
25. A composition as claimed in Claim 24, wherein the aromatic hydrocarbon is polycyclic.
26. A composition as claimed in Claim 25, wherein the polycyclic hydrocarbon is naphthalene, biphenyl or phenanthrene.
27. A composition as claimed in any one of
Claims 23 to 26, wherein the radical anion is formed by reduction of the hydrocarbon by a reducing metal.
28. A composition as claimed in Claim 27, wherein the reducing metal is an alkali metal.
29. A composition as claimed in any one of
Claims 23 to 26, wherein the radical anion is formed by electrochemical reduction of the hydrocarbon.
30. A composition as claimed in Claim 27 or 29, wherein in the formation of the radical anion, the hydrocarbon is dissolved in a non-aqueous solvent.
31. An electroless deposition process substantially as herein described with reference to any one of the Examples.
32. An electroless deposition composition substantially as described with reference to any one of the Examples.
33. Material whenever deposited by a process as claimed in any one of Claims 2 to 16 and 31 and/or by means of a composition as claimed in any one of Claims 17 to 30 and 32.
34. A substrate having a deposit of material as claimed in Claim 33.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH3992/83A CH656401A5 (en) | 1983-07-21 | 1983-07-21 | METHOD FOR ELECTRICALLY DEPOSITING METALS. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8418549D0 GB8418549D0 (en) | 1984-08-22 |
| GB2143853A true GB2143853A (en) | 1985-02-20 |
Family
ID=4267786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08418549A Withdrawn GB2143853A (en) | 1983-07-21 | 1984-07-20 | Deposition |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS6026668A (en) |
| AT (1) | ATA179684A (en) |
| CH (1) | CH656401A5 (en) |
| DE (1) | DE3422731A1 (en) |
| FR (1) | FR2549497A1 (en) |
| GB (1) | GB2143853A (en) |
| IT (1) | IT1177814B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5242713A (en) * | 1988-12-23 | 1993-09-07 | International Business Machines Corporation | Method for conditioning an organic polymeric material |
| US5318803A (en) * | 1990-11-13 | 1994-06-07 | International Business Machines Corporation | Conditioning of a substrate for electroless plating thereon |
| WO2005038891A1 (en) * | 2003-10-16 | 2005-04-28 | Jsr Corporation | Composition for forming silicon-cobalt film, silicon-cobalt film and method for forming same |
| JP4636236B2 (en) * | 2003-10-16 | 2011-02-23 | Ｊｓｒ株式会社 | Composition for forming silicon / cobalt film and method for forming silicon / cobalt film |
| AT500782B8 (en) * | 2004-11-19 | 2007-02-15 | Plansee Se | METHOD FOR SEPARATING LAYERS FROM IONIC LIQUIDS |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1445772A (en) * | 1973-08-01 | 1976-08-11 | Rhone Poulenc Textile | Process for silvering polyamides |
| GB1448831A (en) * | 1972-10-31 | 1976-09-08 | Siemens Ag | Currentless plating of solid bodies with nickel |
| GB1461036A (en) * | 1974-02-22 | 1977-01-13 | Kollmorgen Corp | Process and liquid for the catalytic sensitization of non- metallic surfaces for subsequent electroless metallization |
| GB1468973A (en) * | 1975-07-18 | 1977-03-30 | Atomic Energy Authority Uk | Microcircuit packages |
| GB1473223A (en) * | 1975-09-04 | 1977-05-11 | Welwyn Electric Ltd | Circuit board blanks |
| GB1482708A (en) * | 1973-12-07 | 1977-08-10 | Surface Tech Inc | Catalytic treatment of non-conductors for chemical platin |
| GB1496009A (en) * | 1972-04-24 | 1977-12-21 | Rhone Poulenc Textile | Process for increasing the electrical conductivity of synthetic polymer articles |
| GB1528015A (en) * | 1974-10-04 | 1978-10-11 | Surface Tech Inc | Electroless plating |
| GB2037327A (en) * | 1978-11-27 | 1980-07-09 | Macdermid Inc | Electroless copper deposition |
| GB2095292A (en) * | 1981-03-23 | 1982-09-29 | Hooker Chemicals Plastics Corp | Electroless gold plating |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3635761A (en) * | 1970-05-05 | 1972-01-18 | Mobil Oil Corp | Electroless deposition of metals |
| FR2196394A1 (en) * | 1972-08-19 | 1974-03-15 | Metallgesellschaft Ag | Plating inner walls of chemical appts - by chemical reduction or organo-metal cpds dissolved in hydrocarbons |
-
1983
- 1983-07-21 CH CH3992/83A patent/CH656401A5/en not_active IP Right Cessation
-
1984
- 1984-05-30 AT AT841796A patent/ATA179684A/en not_active IP Right Cessation
- 1984-06-19 DE DE19843422731 patent/DE3422731A1/en not_active Withdrawn
- 1984-06-20 IT IT48429/84A patent/IT1177814B/en active
- 1984-06-28 JP JP59134039A patent/JPS6026668A/en active Pending
- 1984-07-11 FR FR8411047A patent/FR2549497A1/en active Pending
- 1984-07-20 GB GB08418549A patent/GB2143853A/en not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1496009A (en) * | 1972-04-24 | 1977-12-21 | Rhone Poulenc Textile | Process for increasing the electrical conductivity of synthetic polymer articles |
| GB1448831A (en) * | 1972-10-31 | 1976-09-08 | Siemens Ag | Currentless plating of solid bodies with nickel |
| GB1445772A (en) * | 1973-08-01 | 1976-08-11 | Rhone Poulenc Textile | Process for silvering polyamides |
| GB1482708A (en) * | 1973-12-07 | 1977-08-10 | Surface Tech Inc | Catalytic treatment of non-conductors for chemical platin |
| GB1461036A (en) * | 1974-02-22 | 1977-01-13 | Kollmorgen Corp | Process and liquid for the catalytic sensitization of non- metallic surfaces for subsequent electroless metallization |
| GB1528015A (en) * | 1974-10-04 | 1978-10-11 | Surface Tech Inc | Electroless plating |
| GB1468973A (en) * | 1975-07-18 | 1977-03-30 | Atomic Energy Authority Uk | Microcircuit packages |
| GB1473223A (en) * | 1975-09-04 | 1977-05-11 | Welwyn Electric Ltd | Circuit board blanks |
| GB2037327A (en) * | 1978-11-27 | 1980-07-09 | Macdermid Inc | Electroless copper deposition |
| GB2095292A (en) * | 1981-03-23 | 1982-09-29 | Hooker Chemicals Plastics Corp | Electroless gold plating |
Also Published As
| Publication number | Publication date |
|---|---|
| IT8448429A0 (en) | 1984-06-20 |
| CH656401A5 (en) | 1986-06-30 |
| IT1177814B (en) | 1987-08-26 |
| ATA179684A (en) | 1986-12-15 |
| DE3422731A1 (en) | 1985-01-31 |
| FR2549497A1 (en) | 1985-01-25 |
| JPS6026668A (en) | 1985-02-09 |
| GB8418549D0 (en) | 1984-08-22 |
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| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |