GB2139248A - Copper alloy solderable contact pad produced by vapour deposition - Google Patents
Copper alloy solderable contact pad produced by vapour deposition Download PDFInfo
- Publication number
- GB2139248A GB2139248A GB08312213A GB8312213A GB2139248A GB 2139248 A GB2139248 A GB 2139248A GB 08312213 A GB08312213 A GB 08312213A GB 8312213 A GB8312213 A GB 8312213A GB 2139248 A GB2139248 A GB 2139248A
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- GB
- United Kingdom
- Prior art keywords
- aluminium
- layer
- substrate
- copper
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/04—Joining glass to metal by means of an interlayer
- C03C27/042—Joining glass to metal by means of an interlayer consisting of a combination of materials selected from glass, glass-ceramic or ceramic material with metals, metal oxides or metal salts
- C03C27/046—Joining glass to metal by means of an interlayer consisting of a combination of materials selected from glass, glass-ceramic or ceramic material with metals, metal oxides or metal salts of metals, metal oxides or metal salts only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0326—Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Liquid Crystal (AREA)
Abstract
The pads are formed by a vacuum evaporation technique applied to a starting material that is an alloy of cooper with from above 0.2 to 1.0 wt% aluminium - the thus-formed layer of alloy constituting the desired contact pad -, or alternatively separate billets of aluminium and copper may be simultaneously evaporated. The pads are solderable even when ovened in air at 200 DEG C.
Description
SPECIFICATION
Solderable contact materials
This invention concerns solderable contact materials, and relates in particular to methods of providing these on substrates therefore.
There are numerous occasions in the general electronics field where it is required to solder an electrical connection to a component or a lead thereto via a contact pad (an area of conductive material itself already connected to the component or lead). For example, semiconductor devices-including light emitting diodes and hybrid assemblies-may be mounted on a nonconductive substrate and have thin conductive leads extending therefrom to relatively large pads which may in turn be connected, by wires soldered thereto, to the pins of a dual-in-line package of which the device and its substrate form a part. Again, tho electrodes of a liquid crystal display unit may be connected via thin conductive leads to larger pads by which the unit may be solderwire connected to the equipment driving the display.
It is at present conventional to vacuum deposit the contact pads into place in a preliminary stage of the device's manufacture. Unfortunately, making contacts in this way has presented problems, for vacuum-deposited contacts are commonly of materials that tend to oxidise during any subsequent heat processing of the device. Thus, one contact material combination used is a bi-layer of nichrome (as a base adhesion layer) and then aluminium. Even at room temperature this forms a thin oxide layer, and can only be ultrasonically bonded to aluminium or gold wire; at elevated temperatures (i.e., 200 C), the aluminium forms an oxide layer which renders the pad useless.Another combination is a bi-layer of chromium or nichrome and then gold, but this requires a reasonably thick layer of gold for it to be bondable or solderable, so a tri-layer combination of chromium or nichrome followed by copper and then gold has been used and has been quite successful. However, the cost of gold has led to the investigation of other alloys and combinations with varied results.
It has been discovered that certain alloys of copper containing very small (~0.5 wt%) quantities of aluminium may be used on top of a base adhesion layer of chromium or nichrome to construct (by, for example, standard evaporation techniques) bi-layer contact pads-the layer of chromium or nichrome, and then the layer of aluminium/copper alloy-that are both solderable and remain so even when ovened in air at 200 C (and so do not oxidise under such conditions).
In one aspect, therefore, the invention provides a method of constructing solderable contact pads upon a chosen substrate, in which method there is formed on the relevant area of the substrate an aluminium/copper alloy layer (that is, a layer which is an alloy of copper containing small quantities of aluminium) as defined hereinafter, the thus-formed layer of alloy constituting the desired contact pad.
The expression "aluminium/copper alloy layer" used above is now defined to mean a layer of an alloy having the same composition as that alloy which has been formed by a vacuum evaporation technique applied to a starting material that is an alloy of copper with from above 0.2 to 1.0 wt% aluminium. This method of defining the aluminium/copper layer, which is applicable to any such layer no matter how it is actually formed (whether by vacuum evaporation/deposition, sputtering, or what) and no matter what are its actual composition and internal structure, is employed because, as is now explained, the actual nature of the aluminium/copper layer applied in the inventive method is in some doubt.
Analysis of the alloy layer formed by the method of the invention has given ambiguous results. More specifically, it has proved difficult to get consistent values for the aluminium content of the layer, and this is presumably at least in part because the structure of the layer is not uniform throughout its depth but seems generally (but not exclusively) to be relatively aluminium-poor at the interface with the substrate (or with any initial coating on the substrate surface) but relatively aluminium-rich on the external surface. It is therefore not entirely satisfactory to characterise the alloy by its constituents and their proportions.Nevertheless, for guidance it may be said that acceptable alloy layer appear to contain from 0.01 to 0.1 wt% aluminium at the interface (the internal surface) and from above 0.2 to 1.0 wt% aluminium at the external surface (though one very satisfactory alloy layer actually contained 0.006 wt% at the interface and less-0.001 wt%-at the external surface!), and that presumably the proportion of aluminium varies progressively (though in a manner not presently known) between the two values through the depth of the layer.
The substrate upon which the contact pads are formed may be whatever is relevant to the device being fabricated. Accordingly, it may, for example, be a semiconductor material, a glass, or a synthetic resin (plastics). The invention is of particular value in the construction of liquid crystal displays, when the substrate is the glass of the liquid crystal cell.
Although it is not inconceivable that the layer should be formed directly on the substrate surface, it is most likely that it will be prepared upon a base adhesion layer that has previously been formed on the substrate surface (commonly by vacuum evaporation or sputtering techniques). Typical base adhesion layers are of chromium and of nichrome (an alloy commonly of 80 wt% nickel and 20 wt% chromium).
The precise method by which the desired alloy layer is formed on the substrate may be any convenient method for forming metal layers. It may, therefore, be vacuum evaporated/deposited onto the substrate (the method used to define the nature of the layer), or it may be sputtered on. Moreover, where the method is vacuum evaporation the source of aluminium and copper may either be an alloy thereof (with an aluminium concentration of from above 0.2 to 1.0 wt%) or may be separate billets of aluminium and copper simultaneously evaporated and so positioned and dimensioned as to act like the above 0.2 to 1.0 wt% Al alloy.
To form contact pads of any particular shape or size an evaporation or sputtering method can be utilized with a mask to prevent alloy being deposited on other areas. Alternatively, however, the pads may be shaped afterwards, by etching away unwanted material, using conventional photolithography resist and etching techniques.
The defined aluminium/copper alloy layer is one made from a starting material "containing" copper together with from above 0.2 to 1.0 wt% aluminium.
In the region at and below 0.2 wt% the copper in the layer shows an increasing tendency to oxidise when the layer is heated to 200 C in air, while in the region of and above 1.0 wt% the formed contact pads increasingly resist solder. Within the above 0.2 to 1.0 wt% range there seems to be little difference in formed layer properties, though the colour may vary.
Nevertheless the middle of the range-about 0.5 to 0.7 wt% aluminium-is generally most satisfactory.
The invention extends, of course, to a substrate, or a device, whenever bearing contact pads formed by the method as described and claimed herein.
The following Example and Test Results are now given, though only by way of illustration, to show details of various embodiments of the invention.
Example 1
Preliminary Preparation
A glass substrate, on which a pattern of conductive coating (indium/tin oxide) had already been formed, was cleaned and dried. It was then carefully aligned with an out-of-contact mask at a distance of 15 cms above an electron beam evaporation source in a vacuum evaporation system (Birvac Type TEl 2-RF).
Base Adhesion Layer
After pumping and ion bombardment cleaning of the substrate, and when the pressure was better than 1 X 10-5 Torr, a layer of chromium 0.07#m thick was evaporated on to the substrate to form a base adhesion layer.
Aluminium/Copper Contact Pad Layer
On top of the base adhesion layer an aluminium/copper layer was formed by completely evaporating an aluminium/copper alloy pellet of some 0.1 gms containing 0.75% of aluminium. This gave a layer 0.27lim thick as an aluminium/copper alloy. The layer had about 1 wt% Al at the external surface and about 0.3 wt% Al at the interface with the substrate.
Testing
a) After removal from the vacuum system it was found that the layer had a yellowish copper colour, and after firing in air for 1 hour at 200 C no oxidation was evident.
b) Pull tests were carried out on a Hunter Tensile Tester, Model TJ, fitted with Mechanical
Force Guage, Model D-50-T. A 22 swg tinned copper wire, soldered to the surface for a length of 2mm using standard resin-cored electrical solder and pulled parallel to the surface, broke at a pull of 22 Ibs, leaving the soldered joint intact.
Examples 2-4
The same preparation and testing was effected using aluminium/copper alloy pellets containing other quantities of aluminium (including two "comparisons" outside the scope of the invention). The results are shown in the Table below.
SPECIFICATION
Solderable contact materials
This invention concerns solderable contact materials, and relates in particular to methods of providing these on substrates therefore.
There are numerous occasions in the general electronics field where it is required to solder an electrical connection to a component or a lead thereto via a contact pad (an area of conductive material itself already connected to the component or lead). For example, semiconductor devices-including light emitting diodes and hybrid assemblies-may be mounted on a nonconductive substrate and have thin conductive leads extending therefrom to relatively large pads which may in turn be connected, by wires soldered thereto, to the pins of a dual-in-line package of which the device and its substrate form a part. Again, thv electrodes of a liquid crystal display unit may be connected via thin conductive leads to larger pads by which the unit may be solderwire connected to the equipment driving the display.
It is at present conventional to vacuum deposit the contact pads into place in a preliminary stage of the device's manufacture. Unfortunately, making contacts in this way has presented problems, for vacuum-deposited contacts are commonly of materials that tend to oxidise during any subsequent heat processing of the device. Thus, one cohtact material combination used is a bi-layer of nichrome (as a base adhesion layer) and then aluminium. Even at room temperature this forms a thin oxide layer, and can only be ultrasonically bonded to aluminium or gold wire: at elevated temperatures (i.e., 200 C), the aluminium forms an oxide layer which renders the pad useless.Another combination is a bi-layer of chromium or nichrome and then gold, but this requires a reasonably thick layer of gold for it to be bondable or solderable, so a tri-layer combination of chromium or nichrome followed by copper and then gold has been used and has been quite successful. However, the cost of gold has led to the investigation of other alloys and combinations with varied results.
It has been discovered that certain alloys of copper containing very small (-0.5 wt%) quantities of aluminium may be used on top of a base adhesion layer of chromium or nichrome to construct (by, for example, standard evaporation techniques) bi-layer contact pads-the layer of chromium or nichrome, and then the layer of aluminium/copper alloy-that are both solderable and remain so even when ovened in air at 200 C (and so do not oxidise under such conditions).
In one aspect, therefore, the invention provides a method of constructing solderable contact pads upon a chosen substrate, in which method there is formed on the relevant area of the substrate an aluminium/copper alloy layer (that is, a layer which is an alloy of copper containing small quantities of aluminium) as defined hereinafter, the thus-formed layer of alloy constituting the desired contact pad.
The expression "aluminium/copper alloy layer" used above is now defined to mean a layer of an alloy having the same composition as that alloy which has been formed by a vacuum evaporation technique applied to a starting material that is an alloy of copper with from above 0.2 to 1.0 wt% aluminium. This method of defining the aluminium/copper layer, which is applicable to any such layer no matter how it is actually formed (whether by vacuum evaporation/deposition, sputtering, or what) and no matter what are its actual composition and internal structure, is employed because, as is now explained, the actual nature of the aluminium/copper layer applied in the inventive method is in some doubt.
Analysis of the alloy layer formed by the method of the invention has given ambiguous results. More specifically, it has proved difficult to get consistent values for the aluminium content of the layer, and this is presumably at least in part because the structure of the layer is not uniform throughout its depth but seems generally (but not exclusively) to be relatively aluminium-poor at the interface with the substrate (or with any initial coating on the substrate surface) but relatively aluminium-rich on the external surface. It is therefore not entirely satisfactory to characterise the alloy by its constituents and their proportions.Nevertheless, for guidance it may be said that acceptable alloy layer appear to contain from 0.01 to 0.1 wt% aluminium at the interface (the internal surface) and from above 0.2 to 1.0 wt% aluminium at the external surface (though one very satisfactory alloy layer actually contained 0.006 wt% at the interface and less-0.001 wt%-at the external surface!), and that presumably the proportion of aluminium varies progressively (though in a manner not presently known) between the two values through the depth of the layer.
The substrate upon which the contact pads are formed may be whatever is relevant to the device being fabricated. Accordingly, it may, for example, be a semiconductor material, a glass, or a synthetic resin (plastics). The invention is of particular value in the construction of liquid crystal displays, when the substrate is the glass of the liquid crystal cell.
Although it is not inconceivable that the layer should be formed directly on the substrate surface, it is most likely that it will be prepared upon a base adhesion layer that has previously
been formed on the substrate surface (commonly by vacuum evaporation or sputtering techniques). Typical base adhesion layers are of chromium and of nichrome (an alloy commonly of 80 wt% nickel and 20 wt% chromium).
The precise method by which the desired alloy layer is formed on the substrate may be any convenient method for forming metal layers. It may, therefore, be vacuum evaporated/deposited onto the substrate (the method used to define the nature of the layer), or it may be sputtered on. Moreover, where the method is vacuum evaporation the source of aluminium and copper may either be an alloy thereof (with an aluminium concentration of from above 0.2 to 1.0 wt%) or may be separate billets of aluminium and copper simultaneously evaporated and so positioned and dimensioned as to act like the above 0.2 to 1.0 wt% Al alloy.
To form contact pads of any particular shape-or size an evaporation or sputtering method can be utilized with a mask to prevent alloy being deposited on other areas. Alternatively, however, the pads may be shaped afterwards, by etching away unwanted material, using conventional photolithography resist and etching techniques.
The defined aluminium/copper alloy layer is one made from a starting material "containing" copper together with from above 0.2 to 1.0 wt% aluminium.
In the region at and below 0.2 wt% the copper in the layer shows an increasing tendency to oxidise when the layer is heated to 200 C in air, while in the region of and above 1.0 wt% the formed contact pads increasingly resist solder. Within the above 0.2 to 1.0 wt% range there seems to be little difference in formed layer properties, though the colour may vary.
Nevertheless the middle of the range-about 0.5 to 0.7 wt% aluminium-is generally most satisfactory.
The invention extends, of course, to a substrate, or a device, whenever bearing contact pads formed by the method as described and claimed herein.
The following Example and Test Results are now given, though only by way of illustration, to show details of various embodiments of the invention.
Example 1
Preliminary Preparation
A glass substrate, on which a pattern of conductive coating (indium/tin oxide) had already been formed, was cleaned and dried. It was then carefully aligned with an out-of-contact mask at a distance of 15 cms above an electron beam evaporation source in a vacuum evaporation system (Birvac Type TEl 2-RF).
Base Adhesion Layer
After pumping and ion bombardment cleaning of the substrate, and when the pressure was better than 1 X 10-5 Torr, a layer of chromium 0.07#m thick was evaporated on to the substrate to form a base adhesion layer.
Aluminium/Copper Contact Pad Layer
On top of the base adhesion layer an aluminium/copper layer was formed by completely evaporating an aluminium/copper alloy pellet of some 0.1 gms containing 0.75% of aluminium. This gave a layer O.27jim thick as an aluminium/copper alloy. The layer had about 1 wt% Al at the external surface and about 0.3 wt% Al at the interface with the substrate.
Testing
a) After removal from the vacuum system it was found that the layer had a yellowish copper colour, and after firing in air for 1 hour at 200 C no oxidation was evident.
b) Pull tests were carried out on a Hunter Tensile Tester, Model TJ, fitted with Mechanical
Force Guage, Model D-50-T. A 22 swg tinned copper wire, soldered to the surface for a length of 2mm using standard resin-cored electrical solder and pulled parallel to the surface, broke at a pull of 22 Ibs, leaving the soldered joint intact.
Examples 2-4
The same preparation and testing was effected using aluminium/copper alloy pellets containing other quantities of aluminium (including two "comparisons" outside the scope of the invention). The results are shown in the Table below.
Table
% Al in %Al on % Al Glass Solderable Air ovening Solderable
Pellet Surface interface before air (1 hr/200 C/Air) after air
ovening Visible oxidation? ovening Comparison- 0.20% Not Not Yes Yes No
known known
Example 2 Not 0.001% 0.006 Yes No Yes
known
Example 3 0.52% 0.35% 0.03% Yes No Yes
Example 4 0.74% 1.0% 0.3% Yes No Yes
Comparison 1.02% 0.7% 0.1% No No No
Claims (11)
1. A method of constructing solderable contact pads upon a chosen substrate, in which method there is formed on the relavant area of the substrate an aluminium/copper alloy layer as defined hereinbefore, the thus-formed layer of alloy constituting the desired contact pad.
2. A method as claimed in claim 1, in which the substrate upon which the contact pads are formed is a glass.
3. A method as claimed in claim 2, in which the substrate is the glass of a liquid crystal cell.
4. A method as claimed in any of the preceding claims, in which the aluminium/copper alloy layer is prepared upon a base adhesion layer that has previously been formed on the substrate surface.
5. A method as claimed in claim 4, in which the base adhesion layer is of chromium or nichrome.
6. A method as claimed in any of the preceding claims, in which the aluminium/copper layer is vacuum evaporated/deposited onto the substrate.
7. A method as claimed in claim 6, in which the source of aluminium and copper is an alloy thereof with an aluminium concentration of from above 0.2 to 1.0 wt%.
8. A method as claimed in any of the preceding claims, in which to form contact pads of any particular shape or size an evaporation or sputtering method is utilized with a mask to prevent alloy being deposited on other areas.
9. A method as claimed in any of the preceding claims, in which the aluminium/copper alloy layer is one made as though using an aluminium/copper alloy containing from 0.5 to 0.7 wt% aluminium.
10. A method as claimed in any of the preceding claims and substantially as described hereinbefore.
11. A substrate, or a device, whenever bearing contact pads formed by a method as claimed in any of the preceding claims.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08312213A GB2139248A (en) | 1983-05-04 | 1983-05-04 | Copper alloy solderable contact pad produced by vapour deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08312213A GB2139248A (en) | 1983-05-04 | 1983-05-04 | Copper alloy solderable contact pad produced by vapour deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8312213D0 GB8312213D0 (en) | 1983-06-08 |
| GB2139248A true GB2139248A (en) | 1984-11-07 |
Family
ID=10542151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08312213A Withdrawn GB2139248A (en) | 1983-05-04 | 1983-05-04 | Copper alloy solderable contact pad produced by vapour deposition |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2139248A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4719134A (en) * | 1984-07-31 | 1988-01-12 | The General Electric Company P.L.C. | Solderable contact material |
| EP0507719A1 (en) * | 1991-04-04 | 1992-10-07 | International Business Machines Corporation | Improved glass-ceramic to copper adhesion |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1051393A (en) * | 1964-08-28 | 1900-01-01 | ||
| GB476655A (en) * | 1935-04-12 | 1937-12-13 | Michael George Corson | Copper alloys |
| GB538644A (en) * | 1939-12-01 | 1941-08-12 | American Brass Co | Improvements in or relating to copper base alloys and to conductors for electricity formed from copper base alloys |
| GB830328A (en) * | 1957-06-05 | 1960-03-16 | Gen Electric | Improvements in article and method of joining vitreous material |
| GB1056562A (en) * | 1963-08-12 | 1967-01-25 | United Aircraft Corp | Improvements relating to methods for forming conductive pads on a circuit board by coating with metals |
| GB1071091A (en) * | 1963-05-21 | 1967-06-07 | Olin Mathieson | Improvements in composite articles comprising copper base alloys and surface layers thereon |
| GB1193532A (en) * | 1967-01-13 | 1970-06-03 | Ibm | Improved Electrical Contact for Semiconductor Devices. |
| GB1330600A (en) * | 1971-08-24 | 1973-09-19 | Ibm | Method for forming copper-containing aluminium conductors |
| GB1452720A (en) * | 1974-05-31 | 1976-10-13 | Ibm | Coating apparatus |
| GB1483265A (en) * | 1973-10-27 | 1977-08-17 | Bosch Gmbh Robert | Process for producing a solder-resistant copper layer |
-
1983
- 1983-05-04 GB GB08312213A patent/GB2139248A/en not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB476655A (en) * | 1935-04-12 | 1937-12-13 | Michael George Corson | Copper alloys |
| GB538644A (en) * | 1939-12-01 | 1941-08-12 | American Brass Co | Improvements in or relating to copper base alloys and to conductors for electricity formed from copper base alloys |
| GB830328A (en) * | 1957-06-05 | 1960-03-16 | Gen Electric | Improvements in article and method of joining vitreous material |
| GB1071091A (en) * | 1963-05-21 | 1967-06-07 | Olin Mathieson | Improvements in composite articles comprising copper base alloys and surface layers thereon |
| GB1056562A (en) * | 1963-08-12 | 1967-01-25 | United Aircraft Corp | Improvements relating to methods for forming conductive pads on a circuit board by coating with metals |
| GB1051393A (en) * | 1964-08-28 | 1900-01-01 | ||
| GB1193532A (en) * | 1967-01-13 | 1970-06-03 | Ibm | Improved Electrical Contact for Semiconductor Devices. |
| GB1330600A (en) * | 1971-08-24 | 1973-09-19 | Ibm | Method for forming copper-containing aluminium conductors |
| GB1483265A (en) * | 1973-10-27 | 1977-08-17 | Bosch Gmbh Robert | Process for producing a solder-resistant copper layer |
| GB1452720A (en) * | 1974-05-31 | 1976-10-13 | Ibm | Coating apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4719134A (en) * | 1984-07-31 | 1988-01-12 | The General Electric Company P.L.C. | Solderable contact material |
| EP0507719A1 (en) * | 1991-04-04 | 1992-10-07 | International Business Machines Corporation | Improved glass-ceramic to copper adhesion |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8312213D0 (en) | 1983-06-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |