GB2139029B - Semiconductor device of the type in which a node is precharged in one clock state and selectively discharged in another. - Google Patents

Semiconductor device of the type in which a node is precharged in one clock state and selectively discharged in another.

Info

Publication number
GB2139029B
GB2139029B GB08403873A GB8403873A GB2139029B GB 2139029 B GB2139029 B GB 2139029B GB 08403873 A GB08403873 A GB 08403873A GB 8403873 A GB8403873 A GB 8403873A GB 2139029 B GB2139029 B GB 2139029B
Authority
GB
United Kingdom
Prior art keywords
precharged
node
semiconductor device
another
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08403873A
Other versions
GB8403873D0 (en
GB2139029A (en
Inventor
Hideshi Miyatake
Kazuhiro Shimotori
Kazuyasu Fujishima
Hideyuki Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB8403873D0 publication Critical patent/GB8403873D0/en
Publication of GB2139029A publication Critical patent/GB2139029A/en
Application granted granted Critical
Publication of GB2139029B publication Critical patent/GB2139029B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01728—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals
    • H03K19/01735—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals by bootstrapping, i.e. by positive feed-back

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
GB08403873A 1983-02-16 1984-02-14 Semiconductor device of the type in which a node is precharged in one clock state and selectively discharged in another. Expired GB2139029B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58025596A JPS59149427A (en) 1983-02-16 1983-02-16 Semiconductor device

Publications (3)

Publication Number Publication Date
GB8403873D0 GB8403873D0 (en) 1984-03-21
GB2139029A GB2139029A (en) 1984-10-31
GB2139029B true GB2139029B (en) 1987-03-04

Family

ID=12170284

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08403873A Expired GB2139029B (en) 1983-02-16 1984-02-14 Semiconductor device of the type in which a node is precharged in one clock state and selectively discharged in another.

Country Status (3)

Country Link
JP (1) JPS59149427A (en)
DE (1) DE3405600A1 (en)
GB (1) GB2139029B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920015363A (en) * 1991-01-22 1992-08-26 김광호 TTL input buffer circuit
DE19801887A1 (en) * 1998-01-20 1999-07-22 Mannesmann Vdo Ag Integrated circuit with at least one digital part

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299911A (en) * 1951-08-02
US3714466A (en) * 1971-12-22 1973-01-30 North American Rockwell Clamp circuit for bootstrap field effect transistor
US3988617A (en) * 1974-12-23 1976-10-26 International Business Machines Corporation Field effect transistor bias circuit
US4016434A (en) * 1975-09-04 1977-04-05 International Business Machines Corporation Load gate compensator circuit
JPS5772429A (en) * 1980-10-22 1982-05-06 Toshiba Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
GB8403873D0 (en) 1984-03-21
JPS59149427A (en) 1984-08-27
GB2139029A (en) 1984-10-31
DE3405600C2 (en) 1987-04-16
DE3405600A1 (en) 1984-08-16

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19951108

PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970214