GB2127398B - Disc resonators - Google Patents

Disc resonators

Info

Publication number
GB2127398B
GB2127398B GB08324853A GB8324853A GB2127398B GB 2127398 B GB2127398 B GB 2127398B GB 08324853 A GB08324853 A GB 08324853A GB 8324853 A GB8324853 A GB 8324853A GB 2127398 B GB2127398 B GB 2127398B
Authority
GB
United Kingdom
Prior art keywords
disc resonators
resonators
disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08324853A
Other languages
English (en)
Other versions
GB2127398A (en
GB8324853D0 (en
Inventor
Wolfgang Tolksdorf
Peter Roschmann
Dieter Mateika
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB8324853D0 publication Critical patent/GB8324853D0/en
Publication of GB2127398A publication Critical patent/GB2127398A/en
Application granted granted Critical
Publication of GB2127398B publication Critical patent/GB2127398B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/24—Garnets
    • H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
GB08324853A 1982-09-21 1983-09-16 Disc resonators Expired GB2127398B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823234853 DE3234853A1 (de) 1982-09-21 1982-09-21 Scheibenresonator mit einem substrat aus einem granatmaterial und mit einer auf dem substrat angebrachten epitaxialen schicht aus einem ferrimagnetischen granatmaterial

Publications (3)

Publication Number Publication Date
GB8324853D0 GB8324853D0 (en) 1983-10-19
GB2127398A GB2127398A (en) 1984-04-11
GB2127398B true GB2127398B (en) 1986-06-04

Family

ID=6173715

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08324853A Expired GB2127398B (en) 1982-09-21 1983-09-16 Disc resonators

Country Status (5)

Country Link
JP (1) JPS5980914A (enExample)
DE (1) DE3234853A1 (enExample)
FR (1) FR2533373B1 (enExample)
GB (1) GB2127398B (enExample)
IT (1) IT1171085B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2763040B2 (ja) * 1987-12-09 1998-06-11 信越化学工業株式会社 酸化物ガーネット単結晶
JPH0658845B2 (ja) * 1988-03-16 1994-08-03 信越化学工業株式会社 マイクロ波素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728152A (en) * 1970-12-28 1973-04-17 North American Rockwell Method for producing bubble domains in magnetic film-substrate structures
US3788896A (en) * 1970-12-28 1974-01-29 North American Rockwell Method for producing bubble domains in magnetic film-substrate structures
JPS4837399A (enExample) * 1971-09-16 1973-06-01
FR2407610A1 (fr) * 1977-10-25 1979-05-25 Thomson Csf Dispositif d'interaction a ondes magnetoelastiques de surface
US4263374A (en) * 1978-06-22 1981-04-21 Rockwell International Corporation Temperature-stabilized low-loss ferrite films
FR2447641A1 (fr) * 1979-01-26 1980-08-22 Thomson Csf Oscillateur accordable hyperfrequence a ondes magnetostatiques
DE2928176A1 (de) * 1979-07-12 1981-01-29 Philips Patentverwaltung Einkristall auf der basis von seltenerdmetall-gallium-granat
DE2941994A1 (de) * 1979-10-17 1981-04-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur herstellung eines werkstoffes fuer resonanzfrequenzen oberhalb 100 mhz

Also Published As

Publication number Publication date
DE3234853A1 (de) 1984-03-22
DE3234853C2 (enExample) 1993-02-11
JPS5980914A (ja) 1984-05-10
GB2127398A (en) 1984-04-11
FR2533373A1 (fr) 1984-03-23
GB8324853D0 (en) 1983-10-19
IT1171085B (it) 1987-06-10
IT8322904A0 (it) 1983-09-16
IT8322904A1 (it) 1985-03-16
FR2533373B1 (fr) 1988-11-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940916