GB2125706B - Process for growing crystalline material - Google Patents

Process for growing crystalline material

Info

Publication number
GB2125706B
GB2125706B GB08322133A GB8322133A GB2125706B GB 2125706 B GB2125706 B GB 2125706B GB 08322133 A GB08322133 A GB 08322133A GB 8322133 A GB8322133 A GB 8322133A GB 2125706 B GB2125706 B GB 2125706B
Authority
GB
United Kingdom
Prior art keywords
crystalline material
growing crystalline
growing
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08322133A
Other languages
English (en)
Other versions
GB8322133D0 (en
GB2125706A (en
Inventor
Franz Thomas Geyling
Neida Allyn Robert Von
Morris Shen-Shih Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23624791&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=GB2125706(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB8322133D0 publication Critical patent/GB8322133D0/en
Publication of GB2125706A publication Critical patent/GB2125706A/en
Application granted granted Critical
Publication of GB2125706B publication Critical patent/GB2125706B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB08322133A 1982-08-23 1983-08-17 Process for growing crystalline material Expired GB2125706B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41045282A 1982-08-23 1982-08-23

Publications (3)

Publication Number Publication Date
GB8322133D0 GB8322133D0 (en) 1983-09-21
GB2125706A GB2125706A (en) 1984-03-14
GB2125706B true GB2125706B (en) 1985-12-24

Family

ID=23624791

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08322133A Expired GB2125706B (en) 1982-08-23 1983-08-17 Process for growing crystalline material

Country Status (5)

Country Link
EP (1) EP0104741B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5954689A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1222436A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3381766D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2125706B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183501A (en) * 1985-11-15 1987-06-10 Kollmorgen Tech Corp Horizontal bridgman crystal growth
US4740264A (en) * 1986-10-29 1988-04-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Liquid encapsulated float zone process and apparatus
DE3830929A1 (de) * 1988-09-12 1990-03-15 Kernforschungsanlage Juelich Drehdurchfuehrung fuer rezipienten mit heisser wandung
US5584929A (en) * 1994-03-11 1996-12-17 Sumitomo Electric Industries, Ltd. Method for preparing compound semiconductor crystal
DE4417105C2 (de) * 1994-05-16 1997-03-06 Forschungszentrum Juelich Gmbh Verfahren zur Gewinnung rißfreier Kristalle
EP0744476B1 (en) * 1995-05-26 2000-08-02 Sumitomo Electric Industries, Ltd. Method of preparing group II-VI or III-V compound single crystal
CN105696081B (zh) * 2016-03-23 2018-03-30 西北工业大学 锑化铝材料的制备方法
US20220013993A1 (en) * 2020-07-09 2022-01-13 Fram Group IP, LLC Apparatuses and processes for preparing a suppressor seal of a spark plug insulator assembly

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512380B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-08-25 1980-04-01
DE2361868A1 (de) * 1973-12-12 1975-06-26 Siemens Ag Verfahren zur herstellung eines mehrkomponentigen einkristalls aus einer kongruenten schmelze
GB1577343A (en) * 1978-02-21 1980-10-22 Standard Telephones Cables Ltd Preparing single crystal sheet semiconductor materials
DE2845459A1 (de) * 1978-10-19 1980-04-30 Consortium Elektrochem Ind Verfahren zum schutz von kohlenstoffkoerpern
DE2903061A1 (de) * 1979-01-26 1980-08-07 Heliotronic Gmbh Verfahren zur herstellung grosskristalliner vorzugsorientierter siliciumfolien
DE2925679A1 (de) * 1979-06-26 1981-01-22 Heliotronic Gmbh Verfahren zur herstellung von siliciumstaeben

Also Published As

Publication number Publication date
GB8322133D0 (en) 1983-09-21
GB2125706A (en) 1984-03-14
EP0104741A1 (en) 1984-04-04
JPS5954689A (ja) 1984-03-29
JPH0244798B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-10-05
EP0104741B1 (en) 1990-07-25
DE3381766D1 (de) 1990-08-30
CA1222436A (en) 1987-06-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20010817