DE3381766D1 - Verfahren zum wachsen von kristallinem material. - Google Patents

Verfahren zum wachsen von kristallinem material.

Info

Publication number
DE3381766D1
DE3381766D1 DE8383304750T DE3381766T DE3381766D1 DE 3381766 D1 DE3381766 D1 DE 3381766D1 DE 8383304750 T DE8383304750 T DE 8383304750T DE 3381766 T DE3381766 T DE 3381766T DE 3381766 D1 DE3381766 D1 DE 3381766D1
Authority
DE
Germany
Prior art keywords
crystal material
growing crystal
growing
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383304750T
Other languages
English (en)
Inventor
Franz Thomas Geyling
Neida Allyn Robert Von
Morris Shen-Shih Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23624791&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3381766(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE3381766D1 publication Critical patent/DE3381766D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8383304750T 1982-08-23 1983-08-17 Verfahren zum wachsen von kristallinem material. Expired - Lifetime DE3381766D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41045282A 1982-08-23 1982-08-23

Publications (1)

Publication Number Publication Date
DE3381766D1 true DE3381766D1 (de) 1990-08-30

Family

ID=23624791

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383304750T Expired - Lifetime DE3381766D1 (de) 1982-08-23 1983-08-17 Verfahren zum wachsen von kristallinem material.

Country Status (5)

Country Link
EP (1) EP0104741B1 (de)
JP (1) JPS5954689A (de)
CA (1) CA1222436A (de)
DE (1) DE3381766D1 (de)
GB (1) GB2125706B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183501A (en) * 1985-11-15 1987-06-10 Kollmorgen Tech Corp Horizontal bridgman crystal growth
US4740264A (en) * 1986-10-29 1988-04-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Liquid encapsulated float zone process and apparatus
DE3830929A1 (de) * 1988-09-12 1990-03-15 Kernforschungsanlage Juelich Drehdurchfuehrung fuer rezipienten mit heisser wandung
US5584929A (en) * 1994-03-11 1996-12-17 Sumitomo Electric Industries, Ltd. Method for preparing compound semiconductor crystal
DE4417105C2 (de) * 1994-05-16 1997-03-06 Forschungszentrum Juelich Gmbh Verfahren zur Gewinnung rißfreier Kristalle
DE69609568T2 (de) * 1995-05-26 2001-02-01 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung von einem II-VI oder III-V Halbleitereinkristall
CN105696081B (zh) * 2016-03-23 2018-03-30 西北工业大学 锑化铝材料的制备方法
US20220013993A1 (en) * 2020-07-09 2022-01-13 Fram Group IP, LLC Apparatuses and processes for preparing a suppressor seal of a spark plug insulator assembly

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512380B2 (de) * 1972-08-25 1980-04-01
DE2361868A1 (de) * 1973-12-12 1975-06-26 Siemens Ag Verfahren zur herstellung eines mehrkomponentigen einkristalls aus einer kongruenten schmelze
GB1577343A (en) * 1978-02-21 1980-10-22 Standard Telephones Cables Ltd Preparing single crystal sheet semiconductor materials
DE2845459A1 (de) * 1978-10-19 1980-04-30 Consortium Elektrochem Ind Verfahren zum schutz von kohlenstoffkoerpern
DE2903061A1 (de) * 1979-01-26 1980-08-07 Heliotronic Gmbh Verfahren zur herstellung grosskristalliner vorzugsorientierter siliciumfolien
DE2925679A1 (de) * 1979-06-26 1981-01-22 Heliotronic Gmbh Verfahren zur herstellung von siliciumstaeben

Also Published As

Publication number Publication date
GB2125706A (en) 1984-03-14
GB8322133D0 (en) 1983-09-21
EP0104741A1 (de) 1984-04-04
CA1222436A (en) 1987-06-02
JPS5954689A (ja) 1984-03-29
GB2125706B (en) 1985-12-24
JPH0244798B2 (de) 1990-10-05
EP0104741B1 (de) 1990-07-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN