GB2122418A - Light emitting semi conductor device - Google Patents
Light emitting semi conductor device Download PDFInfo
- Publication number
- GB2122418A GB2122418A GB08309856A GB8309856A GB2122418A GB 2122418 A GB2122418 A GB 2122418A GB 08309856 A GB08309856 A GB 08309856A GB 8309856 A GB8309856 A GB 8309856A GB 2122418 A GB2122418 A GB 2122418A
- Authority
- GB
- United Kingdom
- Prior art keywords
- light emitting
- semiconductor device
- hole
- emitting semiconductor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
- G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
A light emitting semi-conductor device including an electrode 2 formed on a crystal portion, and a thick lamination layer 7 formed on the electrode 2. A hole 8 is formed in the lamination layer 7 and electrode 2 but does not extend into the surface of the crystal portion, the hole 8 receiving and positioning a spherical lens element 5 inserted thereinto. <IMAGE>
Description
SPECIFICATION
Light emitting semiconductor device
BACKGROUND OF THE INVENTION
This invention relates to a light emitting semiconductor device having a spherical lens which is readily manufactured.
A conventional light emitting semiconductor device is illustrated in section in Fig. 1. Reference numeral 1 designates a light emitting
region, 2 and 3; ohmic electrodes for carrying current to this device; 5; a spherical lens, 4; a
hole for positioning the spherical lens immediately above the light emitting region, and 6; a resin for fixing the spherical lens.
In the conventional device, the spherical lens is fixed immediately above the light emitting region by adjusting the position thereof to efficiently couple an optical fiber to light emitted from the light emitting region. Furthermore, the hole 4 is formed immediately above the light emitting region 1 by etching a crystal constituting this semiconductor device.
Therefore, positional adjustment of the spherical lens is automatically effected when the lens 5 is fixed in the hole 4 with the resin 6.
The conventional device has disadvantages as follows:
The manufacture of this light emitting semiconductor device requires much time in the etching of the hole 4 for mounting the spherical lens 5 and in the control of the etching length of the hole 4. Manufacturing reliability is lowered due to the formation of the hole in the crystal.
SUMMARY OF THE INVENTION
This invention is provided to eliminate the foregoing drawbacks. An object of this invention is to provide a novel light emitting semiconductor device which is readily manufactured by fixing the spherical lens in a hole formed in an electrode and a metal lamination of the light emitting semiconductor element.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 is a sectional view showing a conventional light emitting semiconductor device; and
Figure 2 is a sectional view showing a light emitting semiconductor device according to one embodiment of the present invention.
DETAILED DESCRIPTION OF THE PRE
FERRED EMBODIMENTS
Hereinafter, an embodiment of the present invention will be described with reference to
Fig. 2. In Fig. 2, corresponding parts are numbered identically to those in Fig. 1.
Reference numeral 7 designates a plating having a thickness of about several jum to 10 ym which is thickly laminated on the electrode 2; and 8, a hole formed in the electrode 2 and the plating 7. In this embodiment, the hole 8 is formed immediately above the light emitting region 1 in the lamination of the plating 7 having a thickness of about several ym to 10 zm and the electrode 2.
According to the above embodiment, in the hole 8 formed by the plating 7, the spherical lens 5 is fixed by a resin 6, at a position immediately above the light emitting region 1, so that the device can be high-efficiently coupled to the optical fiber.
Further, it is unnecessary to form a hole in the semiconductor crystal by etching, whereby a lowering of the reliability accompanying formation of the hole in the crystal is avoided.
Therefore, number of the process steps is reduced and the manufacture of the device is readily accomplished.
In the embodiment described above, the hole 8 for automatic positional adjustment of the spherical lens 5 is formed in the electrode 2 and the laminated plating 7 thereon. However, another metal layer may be employed as the plating 7 to achieve the same effect.
As described above, a spherical lens is fixed into a hole formed in the metal lamination on the electrode of the light emitting semiconductor device so that positioning of the spherical lens is automatically effected immediately above the light emitting region of the light emitting semiconductor device. Therefore, the reliability of the completed light emitting semiconductor device is improved in addition to facilitating the manufacture thereof.
Claims (8)
1. A light emitting semiconductor device comprising:
a lamination layer formed on an electrode of said light emitting semiconductor device;
a hole formed in said lamination; and
a spherical lens fixed in said hole.
2. A light emitting semiconductor device as claimed in claim 1, wherein said spherical lens is fixed in said hole by means of a resin.
3. A light emitting semiconductor device as claimed in claim 1, wherein said lamination layer comprises a metal plating.
4. A light emitting semiconductor device as claimed in claim 1, wherein said lamination layer comprises a metallic layer of a metal other than that forming said electrode.
5. A light emitting semiconductor device as claimed in claim 1, wherein said hole is formed in both said electrode and said lamination layer.
6. A light emitting semiconductor device as claimed in claim 1, said device further including a cyrstal portion underlying said electrode, said hole extending only to the surface of said crystal portion.
7. A light emitting semiconductor device as claimed in claim 1, said lamination layer being formed to a thickness of several ym to 10 ym.
8. A light-emitting semi-conductor device substantially as hereinbefore described with reference to Fig. 2 of the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5643182U JPS58158460U (en) | 1982-04-16 | 1982-04-16 | semiconductor light emitting device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8309856D0 GB8309856D0 (en) | 1983-05-18 |
| GB2122418A true GB2122418A (en) | 1984-01-11 |
| GB2122418B GB2122418B (en) | 1986-08-06 |
Family
ID=13026896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08309856A Expired GB2122418B (en) | 1982-04-16 | 1983-04-12 | Light emitting semi conductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS58158460U (en) |
| GB (1) | GB2122418B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0230336A1 (en) * | 1986-01-24 | 1987-07-29 | Philips Composants | Optoelectronic device for surface mounting |
| GB2276493B (en) * | 1993-03-23 | 1996-12-18 | Mitsubishi Electric Corp | Semiconductor laser device array, semiconductor laser device and production method therefore |
| US20220190557A1 (en) * | 2020-12-14 | 2022-06-16 | Panasonic Intellectual Property Management Co., Ltd. | Light emitting device, manufacturing method, and waveguide structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864298A (en) * | 2021-01-08 | 2021-05-28 | 厦门市信达光电科技有限公司 | Small-angle LED packaging structure and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0021352A1 (en) * | 1979-06-19 | 1981-01-07 | Kabushiki Kaisha Toshiba | Light-driven semiconductor device |
-
1982
- 1982-04-16 JP JP5643182U patent/JPS58158460U/en active Pending
-
1983
- 1983-04-12 GB GB08309856A patent/GB2122418B/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0021352A1 (en) * | 1979-06-19 | 1981-01-07 | Kabushiki Kaisha Toshiba | Light-driven semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0230336A1 (en) * | 1986-01-24 | 1987-07-29 | Philips Composants | Optoelectronic device for surface mounting |
| FR2593930A1 (en) * | 1986-01-24 | 1987-08-07 | Radiotechnique Compelec | OPTOELECTRONIC DEVICE FOR SURFACE MOUNTING |
| GB2276493B (en) * | 1993-03-23 | 1996-12-18 | Mitsubishi Electric Corp | Semiconductor laser device array, semiconductor laser device and production method therefore |
| US20220190557A1 (en) * | 2020-12-14 | 2022-06-16 | Panasonic Intellectual Property Management Co., Ltd. | Light emitting device, manufacturing method, and waveguide structure |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8309856D0 (en) | 1983-05-18 |
| JPS58158460U (en) | 1983-10-22 |
| GB2122418B (en) | 1986-08-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 19951108 |
|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19960412 |