GB2110469A - Cooling a semiconductor diode wafer - Google Patents
Cooling a semiconductor diode wafer Download PDFInfo
- Publication number
- GB2110469A GB2110469A GB08233010A GB8233010A GB2110469A GB 2110469 A GB2110469 A GB 2110469A GB 08233010 A GB08233010 A GB 08233010A GB 8233010 A GB8233010 A GB 8233010A GB 2110469 A GB2110469 A GB 2110469A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- heat sink
- arrangement
- diode wafer
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000001816 cooling Methods 0.000 title description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 239000004411 aluminium Substances 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 8
- 210000000078 claw Anatomy 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Abstract
A rectifier arrangement comprises a semiconductor diode wafer (4) and an aluminium heat sink (1) which carries the diode wafer, the diode wafer (4) being soldered to a preferably nickel-plated copper member (23). <IMAGE>
Description
SPECIFICATION
Rectifier arrangement having a semiconductor diode wafer
The invention relates to a rectifier arrangement on a cooling plate for an alternating current generator, such as a three-phase alternator, having a semiconductor diode wafer (chip) and a heat sink which carries the diode wafer.
In known rectifier arrangements, aluminium plates disposed at right angles to the axis of rotation of the generator are used as heat sinks.
These aluminium plates are of annular sectorial configuration in axial plan view and their outer edges are bent over in a collar-like or flange-like manner. Hitherto, a cup-shaped housing was provided for each of the diodes of the so-called main current rectifier in three-phase generators when high current intensities were involved, the diode wafer being soldered to the bottoms of the housings and being connectible by means of a lead wire extending from its other side, and the cavity remaining between the lead wire and the wall of the housing being filled with a hardening insulating material. In order to accommodate diodes of this kind, it is necessary to punch holes in the heat sink. These holes generally have a flanged rim in which the diode housings can be secured with a press fit.
An object of the invention is to simplify the rectifier arrangement described in German Patent
Application No. 31 34 307.4 for the purposes described initially, and to improve the dissipation of heat from the particularly highly stressed p-n junction in the semiconductor diode wafer.
In accordance with the invention, there is provided a rectifier arrangement for an alternating current generator, having a semiconductor diode wafer and an aluminium heat sink for carrying the diode wafer, the diode wafer being soldered to a copper wafer by which the diode wafer is supported on the heat sink.
The invention is further described, by way of example, with reference to the accompanying drawings, in which:~
Figs. 1 to 5 are diagrammatic sectional views of five embodiments of rectifier arrangement on a cooling plate in accordance with the present invention.
Referring to Fig. 1, an aluminium plate, whose thickness is drawn to an exaggerated scale, is provided as a heat sink 1 in the first embodiment of the invention, in the same way as in the other embodiments. In the rectifier arrangement of
Figure 1, a cylindrical base 2, also made from aluminium, is secured to the aluminium plate by friction welding. Before the base 2 is secured to the aluminium plate 1, its other end face is provided with a plated copper layer 3 whose thickness has been greatly exaggerated for the sake of clarity.
A thin silicon diode disc 4 is soldered in a conventional manner to the plated copper layer.
The silicon diode disc 4 has a p-n junction surface (not illustrated in the drawing) which extends parallel to its two end faces, and a lead wire 5 of copper is soldered to the other end face of the silicon disc. For the purpose of improved contacting, that end portion of the lead wire 5 which is connected to the silicon disc 4 is widened by upsetting to produce a head 6 illustrated in the drawing.
In order to protect the described arrangement comprising the base 2, the copper layer 3, the silicon disc 4 and the head 6 of the lead wire 5 against mechanical damage and the intrusion of moisture, the said arrangement is surrounded by a tubular sleeve 7 which surrounds the said arrangement concentrically and which is filled with a hardening insulating material 9.
The parts used in the embodiment of Figure 2 which are the same as those used in the embodiment of Figure 1 are provided with the same reference numerals as in Figure 1.
While the base 2 of the embodiment of Figure 1 has a cylindrical circumferential surface 8, the base 12 of Figure 2 has a configuration, produced by non-cutting deformation, in the form of two truncated cones which in each case taper towards the mutual plane parallel end faces of the base.
As a result of this taper, it is possible to obtain by simple means a close-tolerance fit for securing the base 12 to the heat sink 1. In the embodiment of Figure 2, a cylindrical bore 13 is provided for receiving the base 12. After the base 12 has been inserted into this bore, the edge region of the hole 13 is pressed against the cones of the base from above and below by means of respective stamping dies, the annular grooves 15 and 16 illustrated in the drawings being thereby produced. This deformation results in toroidal lugs 17 and 18 which reliably hold the base 12 and provide it with a large transition surface for the heat to be dissipated.
Broken lines 19 in Figure 2 show that, instead of having a double-cone-shaped outer surface, the aluminium base 12 can have a spherical shape which can be obtained by upsetting the originally cylindrical base in its longitudinal direction.
In the embodiment of Figure 3, the base 12 also has a double-cone-shaped outer surface. In order to receive the base 12, a hole whose diameter corresponds to that of the bottom end face 32 of the base is first punched out of the heat sink 1 and is then widened to form a conical depression 33 by means of a die (not illustrated).
After the base 12 has been inserted into the depression 33, the projecting edge portion 34 is pressed against the upper cone 36 of the base by means of a paring die 35, thus producing a retaining clamp 37 for the base 12. A claw 38 is at the same time pared out of the top of the heat sink 1 by the paring die 35 and serves for improved anchoring to the insulating material (not illustrated in Figure 3) when the latter is introduced into a sleeve, surrounding the rectifier arrangement, in the same manner as is indicated in Figures 1 and 2.
In order to increase the adhesion between the insulating material 9 and the lead wire 5 of the diode, the lead wire can be deformed to form a loop 20 or a helical coil. The seating of the base 12 before the peening-over operation is shown in the right hand half of Figure 3, and the left hand half of Figure 3 shows the seating of the base 12 after the peening-over operation effected by means of the paring die 35.
In the embodiments described hitherto, a relatively thick base 2 is provided whose top side facing the semiconductor wafer 4 is provided with a copper coating 3 those thickness is greatly exaggerated in the drawings for the sake of clarity, while, in accordance with the proposals of
Figures 4 and 5, a copper wafer 23 punched out of copper sheet can be provided in order to obtain lower transition resistances and, in the manner shown in Figure 4, is provided on all sides with a coating 24 of nickel. The semiconductor silicon chip 4 is soldered to the wafer 23 in a conventional manner. The copper wafer 23, together with the chip 4, is then soldered or welded to the aluminium cooling plate 1 with the use of ultrasonics.As is shown in the embodiments of Figures 4 and 5, a tubular sleeve 7 is provided which, together with an insulating material 9 which is poured into, and fills, the cavity, provides a secure casing for protection against moisture and mechanical damage.
In the embodiment of Figure 5, a copper wafer 23, which is nickel-coated preferably on all sides, is welded directly onto the heat sink 1 in the same manner as that described above. In addition, in the same way as in the embodiment of Figure 3, a plurality of retaining claws 38 are pared out of the heat sink 1 in the immediate vicinity of the wafer 23. These claws increase the mechanical adhesion of the insulating material filler 9 when the latter is introduced in a fluid state into the cavity surrounded by the sleeve 7.
An advantage of the rectifier arrangement designed in accordance with the invention resides in the fact that very good heat transmission from the semiconductor wafer 4 to the heat sink 1 is ensured and consequently it is possible to withstand a greater current density in the rectifier.
Claims (7)
1. A rectifier arrangement for an alternating current generator, having a semiconductor diode wafer and an aluminium heat sink for carrying the diode wafer, the diode wafer being soldered to a copper wafer by which the diode wafer is supported on the heat sink.
2. An arrangement as claimed in claim 1, in which the copper wafer is welded to the heat sink.
3. An arrangement as claimed in claim 2, in which the heat sink is welded to the copper wafer by ultrasonics.
4. An arrangement as claimed in any of claims 1 to 3, in which there are provided in the immediate vicinity of the copper wafer lugs or claws which are pressed out of the heat sink, which is made from aluminium plate, by formlocking means and are directed towards the wafer mounted on the aluminium plate.
5. An arrangement as claimed in claim 4, in which the copper wafer, the diode wafer and a connection lead wire connected to the top side of the diode wafer are surrounded by a sleeve which is mounted on the heat sink and which is at least approximately concentric with the diode wafer and is filled with a hardening sealing compound.
6. An arrangement as claimed in any preceding claim in which the copper wafer is nickel-plated.
7. A rectifier arrangement constructed substantially as herein described with reference to and as illustrated in the accompanying drawings.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3146227 | 1981-11-21 | ||
| DE19823231389 DE3231389A1 (en) | 1981-08-29 | 1982-08-24 | Rectifier arrangement having a semiconductor diode platelet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2110469A true GB2110469A (en) | 1983-06-15 |
| GB2110469B GB2110469B (en) | 1986-04-30 |
Family
ID=25797486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08233010A Expired GB2110469B (en) | 1981-11-21 | 1982-11-19 | Cooling a semiconductor diode wafer |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB2110469B (en) |
| IT (1) | IT1153014B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2202674A (en) * | 1987-02-27 | 1988-09-28 | Mitsubishi Electric Corp | Dewar mounting for ir detection element |
| GB2226447A (en) * | 1987-02-27 | 1990-06-27 | Mitsubishi Electric Corp | An infrared ray detector |
-
1982
- 1982-11-12 IT IT24211/82A patent/IT1153014B/en active
- 1982-11-19 GB GB08233010A patent/GB2110469B/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2202674A (en) * | 1987-02-27 | 1988-09-28 | Mitsubishi Electric Corp | Dewar mounting for ir detection element |
| US4880979A (en) * | 1987-02-27 | 1989-11-14 | Mitisubishi Denki Kabushiki Kaisha | Infrared ray detector |
| GB2226447A (en) * | 1987-02-27 | 1990-06-27 | Mitsubishi Electric Corp | An infrared ray detector |
| GB2226447B (en) * | 1987-02-27 | 1990-10-31 | Mitsubishi Electric Corp | An infrared ray detector |
| GB2202674B (en) * | 1987-02-27 | 1990-10-31 | Mitsubishi Electric Corp | An infrared ray detector |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1153014B (en) | 1987-01-14 |
| GB2110469B (en) | 1986-04-30 |
| IT8224211A0 (en) | 1982-11-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 20021118 |