GB2109267B - Processes for solidifying liquid materials - Google Patents

Processes for solidifying liquid materials

Info

Publication number
GB2109267B
GB2109267B GB08230370A GB8230370A GB2109267B GB 2109267 B GB2109267 B GB 2109267B GB 08230370 A GB08230370 A GB 08230370A GB 8230370 A GB8230370 A GB 8230370A GB 2109267 B GB2109267 B GB 2109267B
Authority
GB
United Kingdom
Prior art keywords
processes
liquid materials
solidifying liquid
solidifying
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08230370A
Other versions
GB2109267A (en
Inventor
Toshihiko Suzuki
Tomio Sato
Yasaburo Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB2109267A publication Critical patent/GB2109267A/en
Application granted granted Critical
Publication of GB2109267B publication Critical patent/GB2109267B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
GB08230370A 1981-10-26 1982-10-25 Processes for solidifying liquid materials Expired GB2109267B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17120581A JPH0244799B2 (en) 1981-10-26 1981-10-26 KETSUSHOSEICHOHOHO

Publications (2)

Publication Number Publication Date
GB2109267A GB2109267A (en) 1983-06-02
GB2109267B true GB2109267B (en) 1984-12-05

Family

ID=15918967

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08230370A Expired GB2109267B (en) 1981-10-26 1982-10-25 Processes for solidifying liquid materials

Country Status (6)

Country Link
JP (1) JPH0244799B2 (en)
CA (1) CA1223798A (en)
DE (1) DE3239570C2 (en)
FR (1) FR2515216B1 (en)
GB (1) GB2109267B (en)
NL (1) NL8204133A (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605096A (en) * 1983-06-22 1985-01-11 Shin Etsu Handotai Co Ltd Method and apparatus for producing single crystal
JPS6033296A (en) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd Pulling device for single crystal semiconductor
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS60137892A (en) * 1983-12-26 1985-07-22 Toshiba Ceramics Co Ltd Quartz glass crucible
JPS6153187A (en) * 1984-08-24 1986-03-17 Sony Corp Device for growing single crystal
DE3480721D1 (en) * 1984-08-31 1990-01-18 Gakei Denki Seisakusho METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS.
JPS62105998A (en) * 1985-10-31 1987-05-16 Sony Corp Production of silicon substrate
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPS62202528A (en) * 1986-03-03 1987-09-07 Toshiba Corp Manufacture of semiconductor substrate
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
JP2556966B2 (en) * 1986-04-30 1996-11-27 東芝セラミツクス株式会社 Single crystal growing equipment
JP2561072B2 (en) * 1986-04-30 1996-12-04 東芝セラミツクス株式会社 Single crystal growth method and apparatus
JPS645992A (en) * 1987-06-29 1989-01-10 Sony Corp Method for growing crystal
JP2651481B2 (en) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 How to make superconducting materials
JPH01282185A (en) * 1988-05-09 1989-11-14 Nippon Telegr & Teleph Corp <Ntt> Method for growing crystal
JPH0431386A (en) * 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd Pulling up semiconductor single crystal
JPH0442894A (en) * 1990-06-07 1992-02-13 Shin Etsu Handotai Co Ltd Growth of silicon single crystal
JP2767074B2 (en) * 1990-07-13 1998-06-18 信越半導体 株式会社 Silicon single crystal pulling method
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2734445B2 (en) * 1996-04-16 1998-03-30 ソニー株式会社 Crystal growth method
JP4463957B2 (en) 2000-09-20 2010-05-19 信越半導体株式会社 Silicon wafer manufacturing method and silicon wafer
JP6680108B2 (en) 2016-06-28 2020-04-15 株式会社Sumco Method for producing silicon single crystal

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607139A (en) * 1968-05-02 1971-09-21 Air Reduction Single crystal growth and diameter control by magnetic melt agitation
GB2059932B (en) * 1979-09-20 1983-10-12 Sony Corp Solidification processes

Also Published As

Publication number Publication date
CA1223798A (en) 1987-07-07
FR2515216B1 (en) 1985-09-13
GB2109267A (en) 1983-06-02
JPS5874594A (en) 1983-05-06
DE3239570A1 (en) 1983-05-05
FR2515216A1 (en) 1983-04-29
JPH0244799B2 (en) 1990-10-05
DE3239570C2 (en) 1993-11-18
NL8204133A (en) 1983-05-16

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20021024