GB2083010A - A Method of Annealing Semiconductor Materials - Google Patents
A Method of Annealing Semiconductor Materials Download PDFInfo
- Publication number
- GB2083010A GB2083010A GB8028526A GB8028526A GB2083010A GB 2083010 A GB2083010 A GB 2083010A GB 8028526 A GB8028526 A GB 8028526A GB 8028526 A GB8028526 A GB 8028526A GB 2083010 A GB2083010 A GB 2083010A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor materials
- annealing
- discharge lamp
- rare gas
- microseconds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 title claims abstract description 24
- 238000000137 annealing Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 6
- 238000009826 distribution Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000007507 annealing of glass Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 235000013980 iron oxide Nutrition 0.000 description 1
- VBMVTYDPPZVILR-UHFFFAOYSA-N iron(2+);oxygen(2-) Chemical class [O-2].[Fe+2] VBMVTYDPPZVILR-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The light emitted from a flash discharge lamp filled primarily with a rare gas is radiated upon semiconductor materials (e.g. silicon) for rapidly raising the surface temperature thereof and annealing the semiconductor materials. The time taken is so short (60-5000 microseconds) that substantially no change in the density and distribution of impurities in the semiconductor materials will occur.
Description
SPECIFICATION
A Process for Annealing Semiconductor
Materials
This invention relates to a method of annealing semiconductor materials and the like.
Generally, when a semiconductor material, metal or chemical compound is to be relieved of its internal strains, it is heated to an elevated temperature and held at that temperature for a certain time period. Normally, this is done in an electric furnace or with a gas burner, or, in some special cases, by means of an ultrasonic or radio wave heating techniques.
Similarly, for eliminating defects in lattice structures such as those cases in iron oxides by occasional absence of oxygen atoms, the material is heated in an electric furnace in the presence of oxygen gas at a predetermined partial pressure.
With these methods it takes a long time to achieve the desired effect. What is more, these methods are totally unsuited for the annealing of glass rods used to generate laser beams or for semiconductor materials since the density and the distribution of certain impurities which have to be carefully controlled, tend to change when the material is maintained at an elevated temperature for an extended period. For example, none of the above described methods can be applied to repair radiation damages caused by ion implantation during the manufacture of silicon semiconductor devices.
One of the primary objects of this invention is to provide a new method for annealing silicon and other semiconductor materials.
In accordance with this invention, we propose a method of annealing semiconductor material wherein heating is effected by irradiating the material with light emitted from a flash discharge lamp comprising a glass tube containing a rare gas, with the time duration of the light controlled to be in a range of 60 to 5000 microseconds, so as rapidly to raise the surface temperature thereof.
In a preferred embodiment, a tubular discharge lamp is used, the lamp being filled with xenon gas at 0.2 atmospheric pressure and a temperature of 2500. The lamp has a diameter of 6 mm and an arc length of 160 mm. Preferably the lamp is energised by an electric voltage of 1,600 volts, with the light lasting for 400 microseconds (1/3 wave height) and the light energy amounting to approximately 8000 joules. The light is applied to silicon wafers, each having a diameter of 3 inches, so instantaneously raising the surface temperature of the wafers, to produce the desired annealing effect.
By this process, the defects in silicon lattice structure can be eliminated without causing any substantial change in the density and the distribution of impurities. Since the desired annealing effect can be obtained simply by heating a surface layer of the silicon wafer, approximately a few thousand A deep, and the vicinity thereof where the impurity exists, such a
manner of heating is attained by the radiation of
light emitted from flash discharge lamp.
Experiments based upon the above
considerations, have shown that the density distribution of an impurity begins to change when the duration of the light exceeds 5000 microseconds while very little annealing effect can be obtained when the duration of the light is less than 60 microseconds. It was estimated that the duration of the heating process, or the duration of the light emitted from the flash discharge lamp is a very important factor in obtaining a desired annealing effect where very rapid heating is required.
To be more specific, it was found that the energy per unit area which the silicon wafer receives is sufficient if it is in the range of 5 to 100 joule/cm2. It was also found that it is desirable to preheat the material prior to annealing, for a few minutes in a conventional electric furnace at a temperature of several hundred degrees Celsius. Such preheating does not cause any change in the density and the distribution of an impurity.
From the above, it can be seen that a desired annealing effect in semiconductor materials can be obtained simply by irradiating the materials with light emitted from a flash discharge lamp rapidly to heat up the materials, the duration of the light being controlled to a predetermined value. The method of the invention is particularlv suited for annealing semiconductor materials which can be sufficiently annealed by heating their surface layers as well as silicon wafers and other thin semiconductor materials.
Claims (5)
1. A method of annealing semiconductor material wherein heating is effected by irradiating the material with light emitted froma flash discharge lamp comprising a glass tube containing a rare gas, with the time duration of the light controlled to be in a range of 60 to 5,000 microseconds, so as rapidly to raise the surface temperature thereof.
2. A method according to claim 1 wherein the rare gas is Xenon.
3. A method according to claim 1 or claim 2 wherein the radiation energy impinging on the material in the range 5--100 joules/cm2.
4. A method according to any one of the preceding claims 1 to 3 wherein the material is preheated prior to annealing.
5. A method of annealing semiconductor materials substantially as hereinbefore described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8028526A GB2083010A (en) | 1980-09-04 | 1980-09-04 | A Method of Annealing Semiconductor Materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8028526A GB2083010A (en) | 1980-09-04 | 1980-09-04 | A Method of Annealing Semiconductor Materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2083010A true GB2083010A (en) | 1982-03-17 |
Family
ID=10515834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8028526A Withdrawn GB2083010A (en) | 1980-09-04 | 1980-09-04 | A Method of Annealing Semiconductor Materials |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2083010A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999044225A1 (en) * | 1998-02-27 | 1999-09-02 | Daimlerchrysler Ag | Method for producing a microelectronic semiconductor component |
-
1980
- 1980-09-04 GB GB8028526A patent/GB2083010A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999044225A1 (en) * | 1998-02-27 | 1999-09-02 | Daimlerchrysler Ag | Method for producing a microelectronic semiconductor component |
| US6383902B1 (en) | 1998-02-27 | 2002-05-07 | Daimlerchrysler Ag | Method for producing a microelectronic semiconductor component |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |