GB2081972B - Non-volatile ram element - Google Patents
Non-volatile ram elementInfo
- Publication number
- GB2081972B GB2081972B GB8100510A GB8100510A GB2081972B GB 2081972 B GB2081972 B GB 2081972B GB 8100510 A GB8100510 A GB 8100510A GB 8100510 A GB8100510 A GB 8100510A GB 2081972 B GB2081972 B GB 2081972B
- Authority
- GB
- United Kingdom
- Prior art keywords
- volatile ram
- ram element
- volatile
- ram
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8100510A GB2081972B (en) | 1980-08-07 | 1981-01-08 | Non-volatile ram element |
| DE19813131436 DE3131436A1 (en) | 1980-08-07 | 1981-08-07 | "VENTILATED MEMORY ELEMENT (RAM) WITH DIRECT ACCESS" |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8025751 | 1980-08-07 | ||
| GB8100510A GB2081972B (en) | 1980-08-07 | 1981-01-08 | Non-volatile ram element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2081972A GB2081972A (en) | 1982-02-24 |
| GB2081972B true GB2081972B (en) | 1984-05-31 |
Family
ID=26276484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8100510A Expired GB2081972B (en) | 1980-08-07 | 1981-01-08 | Non-volatile ram element |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE3131436A1 (en) |
| GB (1) | GB2081972B (en) |
-
1981
- 1981-01-08 GB GB8100510A patent/GB2081972B/en not_active Expired
- 1981-08-07 DE DE19813131436 patent/DE3131436A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE3131436A1 (en) | 1982-05-06 |
| GB2081972A (en) | 1982-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 20010107 |