GB2050049B - Activation of ions implanted in a semiconductor device - Google Patents

Activation of ions implanted in a semiconductor device

Info

Publication number
GB2050049B
GB2050049B GB7917056A GB7917056A GB2050049B GB 2050049 B GB2050049 B GB 2050049B GB 7917056 A GB7917056 A GB 7917056A GB 7917056 A GB7917056 A GB 7917056A GB 2050049 B GB2050049 B GB 2050049B
Authority
GB
United Kingdom
Prior art keywords
activation
semiconductor device
ions implanted
implanted
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7917056A
Other versions
GB2050049A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to GB7917056A priority Critical patent/GB2050049B/en
Publication of GB2050049A publication Critical patent/GB2050049A/en
Application granted granted Critical
Publication of GB2050049B publication Critical patent/GB2050049B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
GB7917056A 1979-05-16 1979-05-16 Activation of ions implanted in a semiconductor device Expired GB2050049B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7917056A GB2050049B (en) 1979-05-16 1979-05-16 Activation of ions implanted in a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7917056A GB2050049B (en) 1979-05-16 1979-05-16 Activation of ions implanted in a semiconductor device

Publications (2)

Publication Number Publication Date
GB2050049A GB2050049A (en) 1980-12-31
GB2050049B true GB2050049B (en) 1983-03-23

Family

ID=10505198

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7917056A Expired GB2050049B (en) 1979-05-16 1979-05-16 Activation of ions implanted in a semiconductor device

Country Status (1)

Country Link
GB (1) GB2050049B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2457567A1 (en) * 1979-05-23 1980-12-19 Fujitsu Ltd Semiconductor device esp. MISFET prodn. - using silicon nitride film obtd. by direct nitriding to prevent ion implanted impurity migration during heat treatment

Also Published As

Publication number Publication date
GB2050049A (en) 1980-12-31

Similar Documents

Publication Publication Date Title
DE3067913D1 (en) Semiconductor memory device
DE3065928D1 (en) Semiconductor memory device
GB2056282B (en) Implant device
JPS55118651A (en) Semiconductor device
JPS55133562A (en) Semiconductor device
DE3069415D1 (en) Semiconductor device comprising earom cells
DE3071955D1 (en) Semiconductor memory device
DE3068247D1 (en) Semiconductor memory device
JPS5637680A (en) Semiconductor device
GB2071412B (en) Arrangement of zones in a semiconductor device
GB2020896B (en) Ion implantation
JPS52122470A (en) Method of making semiconductor device using ion implantation
JPS567466A (en) Selffalignment semiconductor device
JPS55140272A (en) Semiconductor device
JPS567450A (en) Semiconductor device
DE3070830D1 (en) Semiconductor memory device
GB2014475B (en) Implant device
DE3068269D1 (en) Semiconductor memory device
JPS5687395A (en) Semiconductor device
JPS55162248A (en) Semiconductor device
JPS5666049A (en) Semiconductor device
GB2043343B (en) Semiconductor device
GB2061001B (en) Semiconductor device
JPS5376759A (en) Ion implantation device
JPS5676581A (en) Semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19960516