GB2039962A - Sputtering system - Google Patents
Sputtering system Download PDFInfo
- Publication number
- GB2039962A GB2039962A GB7936617A GB7936617A GB2039962A GB 2039962 A GB2039962 A GB 2039962A GB 7936617 A GB7936617 A GB 7936617A GB 7936617 A GB7936617 A GB 7936617A GB 2039962 A GB2039962 A GB 2039962A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cathode
- anode
- electrode assembly
- surface area
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
An electrode assembly for a sputtering system includes a cathode 8 adapted to present a target surface of relatively large surface area and an anode 18 of smaller area positioned close to but spaced from and centrally of the cathode so as to define with the cathode a substantially annular cathode. <IMAGE>
Description
SPECIFICATION
Sputtering system
This invention relates to an electrode system, particularly for sputtering apparatus, which is apparatus for removing atoms from a cathode by bombarding it with positive ions obtained from a gaseous discharge, usually while subjected to an applied magnetic field. The atoms ejected from the cathode are caused to deposit themselves on the adjacent surface of a substrate where they build up to form coherent films of chosen thickness. In the passage between the cathodic target and the anode, the electrons may be caused to follow extended spiral paths by applied magnetic fields so as to encourage collisions with gas molecules, and consequent ionisation, therefore producing increased discharge densities even at lower than normal operating pressures for sputtering.The practice of modifying the electron paths, by applying magnetic or electric fields, is used for creating conditions for cool sputter deposition.
In sputtering apparatus it is known to use a so-called 'DC diode', including an annular cathode.
This leads to the use of complex electrical insulation, mechanical construction, and thermal conduction arrangements.
The present invention aims at providing an electrode assembly of simpler construction for a sputtering system.
According to the present invention, there is provided an electrode assembly for a sputtering system, comprising a cathode adapted to present a target surface of a predetermined surface area and an anode of relatively smaller surface area facing, adjacent to and centrally of the target surface for masking a central area of the target surface.
Preferably, the cathode target surface area is circular and the anode surface area is circular, the cathode and anode defining together an annular cathode target surface area.
The present invention will now be described by way of example with reference to the accompanying diagrammatic drawing, in which:
Figure lisa diagrammatic sectional view of the respective parts of one form of electrode assembly of the present invention, and
Figure 2 is a diagrammatic plan view of the electrode assembly shown in Figure 1.
The electrode assembly includes a base 2 for the electrodes, having a front surface 4 facing towards a space 6 in which a gaseous discharge is arranged to take place when the sputtering apparatus is energised. Positive ions from the discharge are intended to fall on the front, target, face 20 of a disc-shaped cathode 8 supported from base 2 by means of a hollow electric insulator 10 through which passes a conductor 12 by means of which the cathode 8 is connected to the negative pole of a source 14 of high tension direct current, of which the other pole is connected to the base 2, which is usually earthed.
Mounted on front face 4 is a support 16 for a smaller disc-shaped anode 18 positioned centrally of the target face 20 of cathode 8, and sufficiently far from it to be electrically insulated from it and in the 'cathode fall', usually referred to as 'Crookes dark space'. The anode 18 is of similar shape to, but significantly smaller than, the front face of cathode 8, so as to leave an outer annulus of the target face 20 exposed to space 6. The electrode assembly thus presents to space 6 a central portion functioning as an anode at zero or positive voltage, and an outer annular cathode at a suitable negative voltage.Thus the electrode assembly functions as if it were an annular electrode assembly, with the central anode being effective to suppress electrons being emitted from the centre of the target face 20, thus resulting in the substrate being coated having fewer electrons impinging on it, and therefore remaining cooler.
In a sputtering system intended to be used as a sputter coater it is usual to mount magnets adjacent to the electrodes so as to cause the secondary electrons ejected from the cathode to follow spiral paths and fall on bodies other than the substrate being coated. These magnets have been omitted from the accompanying drawing for clarity, but there would be no difficulty in fitting such magnets in appropriate positions in a simplified electrode assembly of the present invention.
The front surface 4 is provided with a metal ring 22 functioning as an earthed shield to prevent electrons from falling on, and sputtering taking place from the side surface of the cathode 8. In an alternative form of the present invention, the earthed shield 22 could be extended significantly above the target face 20, and the anode 18 be secured to a thin rod extending through aligned holes in the shield 22, to provide a simpler support for the anode. The rod could be clamped by a screw to the shield to prevent it from rotating or being displaced longitudinally.
When it is desired to sputter a substrate with gold or some other precious metal, the use of a circular cathode, as opposed to an annular one, lends itself particularly well to this purpose. All that one needs to do is to cut out a circle of appropriate size from a sheet of the metal in question, and position it on the cathode so that it is at the same potential as the cathode and one face thereof becomes the new target face.
Although the present invention has been described and illustrated with reference to a circular cathode and anode, it is applicable to electrodes of any shape. Indeed, the anode need not have the same shape as has the cathode, but it must be smaller and positioned substantially centrally thereby masking a central area of the target surface.
1. An electrode assembly for a sputtering system comprising a cathode adapted to present a target surface of a predetermined surface area and an anode of relatively smaller surface area facing, adjacent to and centrally of the target surface for masking a central area of the target surface.
2. An electrode assembly as claimed in claim 1, in which the cathode target surface area is circular and the anode surface area is circular, the cathode and anode defining together an annular cathode
**WARNING** end of DESC field may overlap start of CLMS **.
Claims (6)
1. An electrode assembly for a sputtering system comprising a cathode adapted to present a target surface of a predetermined surface area and an anode of relatively smaller surface area facing, adjacent to and centrally of the target surface for masking a central area of the target surface.
2. An electrode assembly as claimed in claim 1, in which the cathode target surface area is circular and the anode surface area is circular, the cathode and anode defining together an annular cathode target surface area.
3. An electrode assembly as claimed in claim 2, in which the cathode is supported from a base by an electric insulator and a support mounted on the base carries the anode.
4. An electrode assembly as claimed in claim 3, in which a metal ring surrounds the cathode and functions as an earth shield.
5. An electrode assembly as claimed in claim 1 or 2, in which the cathode is supported from a base by an electric insulator and is surrounded by a metal ring which functions as an earth shield and extends beyond the target surface area of the cathode, and a rod extending diametrically across the metal ring, which rod supports the anode.
6. An electrode assembly for a sputtering system, constructed and arranged substantially as hereinbefore described with reference to and as illustrated in the Figures of the accompanying drawing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7936617A GB2039962B (en) | 1978-12-29 | 1979-10-22 | Sputtering system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7850369 | 1978-12-29 | ||
GB7936617A GB2039962B (en) | 1978-12-29 | 1979-10-22 | Sputtering system |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2039962A true GB2039962A (en) | 1980-08-20 |
GB2039962B GB2039962B (en) | 1982-10-20 |
Family
ID=26270112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7936617A Expired GB2039962B (en) | 1978-12-29 | 1979-10-22 | Sputtering system |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2039962B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113755807A (en) * | 2021-09-13 | 2021-12-07 | 苏州龙盛电子有限公司 | Optical filter coating device and coating process |
-
1979
- 1979-10-22 GB GB7936617A patent/GB2039962B/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113755807A (en) * | 2021-09-13 | 2021-12-07 | 苏州龙盛电子有限公司 | Optical filter coating device and coating process |
CN113755807B (en) * | 2021-09-13 | 2024-02-09 | 苏州龙盛电子有限公司 | Optical filter coating device and coating process |
Also Published As
Publication number | Publication date |
---|---|
GB2039962B (en) | 1982-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4100055A (en) | Target profile for sputtering apparatus | |
US4060470A (en) | Sputtering apparatus and method | |
US3514391A (en) | Sputtering apparatus with finned anode | |
CA1306972C (en) | Electric arc vapor deposition method and apparatus | |
US4710283A (en) | Cold cathode ion beam source | |
US4038171A (en) | Supported plasma sputtering apparatus for high deposition rate over large area | |
EP0162642B1 (en) | Magnetron sputter device using the same pole piece for coupling separate confining magnetic field to separate targets subject to separate discharges | |
US6254745B1 (en) | Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source | |
US4219397A (en) | Magnetron sputter apparatus | |
US4370217A (en) | Target assembly comprising, for use in a magnetron-type sputtering device, a magnetic target plate and permanent magnet pieces | |
US4515675A (en) | Magnetron cathode for cathodic evaportion apparatus | |
US4810347A (en) | Penning type cathode for sputter coating | |
US4774437A (en) | Inverted re-entrant magnetron ion source | |
EP0012954A2 (en) | Bias sputter deposition apparatus and its method of use | |
US4622122A (en) | Planar magnetron cathode target assembly | |
JPH06235063A (en) | Sputtering cathode | |
JP3515587B2 (en) | Cathode sputtering equipment | |
US3616402A (en) | Sputtering method and apparatus | |
KR890004171B1 (en) | Vacuum sputtering device | |
GB1233404A (en) | ||
KR930011412B1 (en) | Sputtering cathode according to the magnetron principle | |
US4175029A (en) | Apparatus for ion plasma coating of articles | |
US4123686A (en) | Ion generating source | |
US6361663B1 (en) | Vacuum arc evaporator | |
US3719582A (en) | Ion source for slow-ion sputtering |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |