GB2037264A - Cadmium mercury telluride sputtering targets - Google Patents
Cadmium mercury telluride sputtering targets Download PDFInfo
- Publication number
- GB2037264A GB2037264A GB7936723A GB7936723A GB2037264A GB 2037264 A GB2037264 A GB 2037264A GB 7936723 A GB7936723 A GB 7936723A GB 7936723 A GB7936723 A GB 7936723A GB 2037264 A GB2037264 A GB 2037264A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cadmium mercury
- finely divided
- mercury telluride
- die
- compact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims abstract description 49
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 238000005477 sputtering target Methods 0.000 title claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 41
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 230000001427 coherent effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 25
- 238000009826 distribution Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 238000005549 size reduction Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/02—Compacting only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Powder Metallurgy (AREA)
- Bipolar Transistors (AREA)
Abstract
Large size cadmium mercury telluride (CMT) sputtering targets of a homogeneous composition and having a general formula CdxHg1-xTe wherein x has values in the range of about 0.14 to 0.60 are prepared by compacting finely divided CMT of a particle size smaller than 150 mu in a die into a coherent compact having a density of at least 97% theoretical density. CMT with an x value of about 0.14 to about 0.20 preferably is compacted at a die preheat temperature of about 100 to 300 DEG C and at a compacting pressure of at least about 400 MPa. CMT having an x value of about 0.20 to about 0.60 preferably is compacted at a die preheat temperature of about 300 DEG C and a compacting pressure of about 160 to 275 MPa. The die may be evacuated to a pressure of less than about 133 Pa absolute prior to compacting.
Description
SPECIFICATION
Cadmium mercury telluride sputtering targets
This invention relates to a method for producing large size cadmium mercury telluride sputtering targets of a homogeneous composition.
Cadmium mercury telluride, referred to as CMT hereinafter, is a continuous series of ternary compounds having the general formula of CdxHgl-xTe wherein x has values of between zero and one. Compounds exhibiting semi-conducting properties have values of x in the range of about 0.14 to about 1.
Semi-conducting compounds of CMT find application in the solid-state electronics industry in, for example, infrared detectors.
Presently, the most advanced type of material available for infrared detectors is linear array detector strips made from bulk single crystal material and measuring about 20 mm by 1.5 mm or less. These monolithic arrays are made from bulk CMT and may contain up to 200 elements depending on the homogeneity and size of the bulk CMT available. The manufacture of arrays with a higher number of elements is too complex to be handled by methods normally used for connecting the elements to the external electronics.
A simpler and potentially less expensive system could be obtained by switching from a linear array to a focal plane array which resembles, for instance, the solid-state, charge coupled device (CCD) television camera operating in the visible light range. The CCD approach makes use of a multiplexing function, i.e. the data from the focal plane array are obtained in a multiplex form so that individual element leads are not required with the focal plane system, whereas they are required with linear arrays A focal plane array, therefore, makes it possible to use, for example, 1,000 or more elements, resulting in much simpler scanning or no scanning at all while retaining the high resolution and extreme sensitivity that are required for sophisticated thermal imaging.
Although the feasibility of multiplexing CMT with a silicon CCD has been demonstrated, there is presently no practical method known whereby a focal plane array in CMT can be prepared which possesses the required extreme homegeneity of composition and the required electrical parameters. However, sputtering, one of the thin-film techniques whereby a thin layer of CMT is deposited on a suitable substrate, such as for example silicon, may make it possible to make focal plane arrays with the required extreme homogeneity and a compatabilitywith multiplexing.
Sputtering is used to grow thin layers onto substrates epitaxially, i.e., the crystal orientation of the substrate is continued into the epitaxial layer. This is carried out in a chamber which is maintained under a partial vacuum and in which a sputtering target of the material to be deposited is mounted on a water or air-cooled holder or backing plate. A beam of ions, for example argon, from an RF generator or a glow-discharge gun, is directed onto the target and causes sputtering of surface material from the target.
The liberated material deposits on one or more suitable substrates arranged at a distance about the sputtering target. The epitaxial layer deposited by sputtering on the substrate has essentially the same composition as that of the target. In the case of CMT it is essential that the targets possess extreme homogeneity in composition.
Sputtering targets are used in a variety of sizes and shapes, but the sizes of sputtering targets made of
CMT are limited because of the difficulty of preparing CMT which has the required homogeneity. The
methods for preparing CMTwith a homogeneous composition are usually processes involving crystallization and these methods are limited by the constrictions imposed by the CdTe-HgTe phase diagram, viz., the large temperature difference betweeen the solidus and liquidus lines and the high pressures involved atthe higher values for x, the latter especially requiring sophisticated and consequently expensive equipment.For example, preparation of ingots of CMT by the melt re-crystallization process involves temperatures of 700 and 800 C at a pressure of about 4000 KPa for CdxHgl-xTe wherein x = 0.2 and of 800 and 9500C at 8000 KPa for Cd#Hg1.#Te wherein x = 0.5. Consequently, ingots so prepared have a diameter usually not larger than about 15 mm and only portions of the ingots are of sufficiently homogeneous composition to allow preparation of sputtering targets such as are obtained by slicing CMT ingots perpendicular to the axis of the
ingot or by slicing strips of CMTfrom the ingot along the isocomposition lines. Hence, the present limitation
of the size of linear array detector strips of about 20 mm by 1.5 mm or less, unless mosaic patterns with complex lap-joints are used.
We have now found CMT sputtering targets of relatively large size, i.e., sizes larger than heretofore
possible, can be made by size reduction of CMT to obtain finely divided CMT and compression of the finely divided CMT into compacts of desired large dimensions. Thus, CMT sputtering targets of a desired composition of CMT are prepared by compacting finely divided CMT of similar composition and contained in
a die under the application of a compacting pressure suitable to produce a coherent compact of CMT.
Accordingly, there is provided a method for the preparation of sputtering targets of cadmium mercury telluride of the general formula CdxHg1-xTe wherein x has values in the range of about 0.14 to 0.60 which
comprises the steps of preparing finely divided cadmium mercury telluride of desired composition, said finely divided cadmium mercury telluride having particle sizes all less then 150 U, mixing the particles of the finely divided cadmium mercury telluride to obtain a substantially even particle size distribution, adding a
predetermined amount of the mixed particles to a die of desired dimensions, applying a compacting
pressure to said amount to compact the finely divided cadmium mercury telluride into a coherent compact having a density of at least 97% of theoretical density, releasing the pressure and removing the compact having predetermined dimensions from the die, said predetermined amount of mixed particles being sufficient to form said compact of predetermined dimensions.
According to a second embodiment of the invention, there is provided a method similar to that of the first embodiment but the values of x are restricted to the range of from about 0.14 up to about 0.20, the die is preheated to a temperature in the range of about 100 to 3000C and the compacting pressure is at least about 400 MPa.
According to a third embodiment of the invention, there is provided a method similar to that of the first embodiment, but the values of x are restricted to the range of from about 0.20 to about 0.60, the die is preheated to a temperature of about 300 C and the compacting pressure is in the range of about 160 to 275
MPa.
According to other embodiments there are provided sputtering targets of coherent compacts of cadmium mercury telluride prepared according to the first, second and third embodiment.
Finely divided CMT may be single or poly-crystalline and may be prepared by size reduction of ingots or portions thereof, of slices, or of other forms of CMT. Preferably, the CMT has a composition wherein x has values in the range of about 0.14 to 0.60. The souces of the finly divided CMT should be of homogeneous composition, but slight variations in composition may be allowable as such variations tend to disappear, i.e.
average out, in the final composition of the compact. The particle sizes of the finely divided CMT should extend over a range of sizes so that maximum density for the compacted CMT is obtained. Particle sizes of the finely divided CMT all less than 150 U (micron) are generally fine enough to ensure the required density of the compact. The preferred range of particle sizes is from 150 to 44 u. The size reduction is achieved by known methods such as by grinding or crushing. If desired, the size reduction is performed under an inert or reducing atmosphere, such as, for example, an atmosphere of argon or hydrogen gas.
The finely divided CMT is thoroughly mixed to obtain a substantially even particle size distribution. A predetermined amount of the mixed CMT is added to a die of such form that a compact with the desired dimensions will be obtained. The CMT is preferably added at room temperature to avoid deterioration of the
CMT. The die is subjected to pressure using a suitable, commercially available press. The die may be at room temperature or may have been preheated before applying pressure. Also, the die containing the CMT may be evacuated to a suitably low pressure before applying compacting pressure. Preferably, preheated, evacuated dies are used. It is to be understood that multicavity dies can be used.
Although good quality compacts have been obtained with dies at room temperature, as well as with dies that have not been evacuated, the best results have been obtained by pre-heating the die to a temperature of up to about 300 C, adding the predetermined amount of mixed, finely divided CMT at room temperature to the preheated die, and evacuating the die with the contained CMT to pressures of less than about 133 Pa absolute. The compacting pressures applied to the die, i.e., to compact the mixed, finely divided CMT, should be sufficient to provide a coherent compact of high density and sufficient physical strength. When using dies at room temperature (about 20 C), compacting pressures of at least about 400 MPa are required to produce compacts which have a density of at least 97% of theoretical density.Preferably, compacting pressures are in the range of about 400 to 1100 MPa (about 30 to 80 tons per square inch). However, compacts so produced show some cracking. We have found that, for CMT compositions wherein x is in the range of from about 0.14 up to about 0.20, when dies are preheated to a temperature in the range of about 100 to 3000C and evacuated to pressures of less than about 133 Pa absolute, compacting pressures in the preferred range produce compacts which are substantially free of cracks and have a density which is usually higher than 98% of theoretical density; the higher the temperature of the preheated die and the higher the compacting pressure, the higher the density of the compact.We have also found that, when finely divided
CMT with a composition wherein x equals 0.20 or higher, i.e. x = 0.20 to x = 0.60, is added at room temperature to preheated dies and the die is evacuated prior to applying compacting pressure, the compacting pressures are limited.
In the range of compositions wherein x has values in the range of from about 0.20 to about 0.60, the die must be preheated to a relatively high temperature in order to obtain strong coherent compacts. The density of the compact increases with increasing temperature, the best results being obtained with dies preheated to about 300 C, and with increasing compacting pressure, the best results being obtained with compacting pressures in the range of about 160 to 275 MPa (about 12 to 20 tons per square inch.) The compacts thus produced are substantially free of cracks.At compacting pressures above about 275 MPa small cracks are present in the compacts when they are removed from the die and cracking becomes progressively severe with increasing pressure, i.e., cracks first develop laterally in planes perpendicular to the axis of the compact and then readially and finally the compact becomes incoherent.
In all cases, compacting pressures should be applied for a period of time of not less than about one minute to produce strong, coherent compacts. When CMT at room temperature is added to a preheated die, a temperature equilibration period of about one to three minutes should be allowed. The steps of equilibrating, evacuating and applying pressure may be executed in succession or almost simultaneously.
After the application of pressure for the desired length of time, the pressure is released and the compact is removed from the die. Sintering of the compacts is not necessary because the compacts have a density which is at least 97% of theoretical density and in most cases higher than 98%, and possess the necessary physical strength. The compact, as removed from the die, can be used as such for a sputtering target, or if desired, may be cut, lapped and polished prior to use as sputtering target.
The invention will now be illustrated by the following non-limitative examples.
Example 1
45 g of high purity, poly-crystalline CdxHg1-xTe (x = 0.15) powder at room temperature and having particle sizes all less than 150 F were added to a 38 mm diameter die, which had been preheated to a temperature of 200 C. The die was closed, evacuated to a pressure of less than 133 Pa and subjected to a compacting pressure of 690 MPa (50 tons per square inch). After three minutes the pressure was released and the resulting disc removed from the die. The compacted disc, measuring 38 mm in diameter and 5 mm thick, was free of cracks, had smooth surfaces and had a density of 99% of theoretical density.
Example 2
The test described in Example 1 was repeated but the die was preheated to 100 C. A compacted disc of the same dimensions, free of cracks and having a density of 99% of theoretical density, was obtained.
Example 3
The test described in Example 1 was repeated but the die was preheated to a temperature of 50 C. A compact disc of the same dimensions and having a density of 99% of theoretical density was obtained. The compact showed a number of small cracks, which did not affect the coherence of the compact.
Example 4
The test described in Example 1 was repeated but a 19 mm diameter die preheated-to 100#C was used, the die was not evacuated prior to application of pressure and the pressure during compaction was 940 MPa (68 tons per square inch). A compact cylinder measuring 19 mm in diameter and 20 mm thick, free of cracks and
having a density of 99% of theoretical density was obtained.
Example 5
The test described in Example 1 was repeated but with CdxHg1-xTe powder wherein x had a value of 0.55; the die was not pre-heated. A disc of the same dimensions and a density of 98.5% was obtained. The disc showed some cracks.
It can be seen from Examples 1,2 and 4, using dies pre-heated to a temperature of at least 100 C, that substantially crack4ree compacts of large diameter and thickness and having a density of 99% of theoretical density can be made from finely divided CMT wherein x is about 0.15. Examples 3 and 5 show that, when x
has value above 0.20 or the dies is at a temperature below 100 C, large compacts of high density can be obtained but the compacts are not free of cracks.
Example 6
45 g portions at room temperature of finely divided, high purity, poly-crystalline CMT where x has a value in the range of 0.20 to 0.60 were compacted at varying compacting pressures in a die having a diameter of 38 mm which was preheated to a temperature of 300 C and evacuated to less than 133 Pa absolute. The compacting pressure was applied for a period of three minutes immediately after closing and while evacuating the die. After removal from the die, the compacts, measuring 38 mm diameter and 5 mm thick, were inspected and their density determined. The results are given in Table 1.
TABLE 1
Value Compacting Density as % Result of
of x pressure in MPa of theoretical Inspection
0.20 165 97 free of cracks
0.20 207 98.0 free of cracks
0.20 234 98.5 free of cracks
0.20 276 99.3 free of cracks
0.20 345 - some lateral cracks
0.20 386 - some radial cracks
0.32 234 98.5 free of cracks
0.32 276 99.5 some small cracks 0.40 276 99.5 some small cracks
0.60 207 98.2 free of cracks
0.60 276 99.2 some small cracks
As can be seen from the results of Example 6, compacts free of cracks and having densities of at least 97% of theoretical density can be made by compressing finely divided CMT with x values in the range of 0.20 to 0.60 into forms of large diameter and thickness using compacting pressures in the range of 160 to 275 MPa and dies preheated at 300 C.
Claims (14)
1. A method for the preparation of sputtering targets of cadmium mercurytelluride of the general formula CdxHg1-xTe wherein x has values in the range of about 0.14 to 0.60 which comprises the steps of preparing finely divided cadmium mercury telluride of desired composition, said finely divided cadmium mercury telluride haveing particles sizes all less than 150 y, mixing the particles of the finely divided cadmium mercury telluride to obtain a substantially even particle size distribution, adding a predetermined amount particles to a die of desired dimensions, applying a compacting pressure to said amount to compact the finely cadmium mercury telluride into a coherent compact having a density of at least 97% of theoretical density, releasing the pressure and removing the compact having predetermined dimensions from the die, said predetermined amount of mixed particles being sufficient to form said compact of predetermined dimensions.
2. A method for the preparation of sputtering targets of cadmium mercury telluride of the general formula CdxHgl-xTe wherein x has values in the range of from about 0.14 up to about 0.20 which comprises the steps of preparing finely divided cadmium mercury telluride of desired composition, said finely divided cadmium mercury telluride having particle sizes all less than 150 ,tt, mixing the finely divided cadmium mercury telluride to obtain a substantially even particle size distribution, preheating a die of desired dimensions to a temperature in the range of about 100 to 3000C, adding a predetermined amount of mixed particles to the preheated die, applying a compacting pressure to said amount of at least about 400 MPa to compact the finely divided cadmium mercury telluride into a coherent compact having a density of at least 97% of theoretical density, releasing the pressure and removing the compact having predetermined dimensions from the die, said predetermined amount of mixed particles being sufficient to form said compact of predetermined dimensions.
3. A method for the preparation of sputtering targets of cadmium mercury telluride of the general formula CdxHg1-xTe wherein x has values in the range of from about 0.20 to about 0.60 which comprises the steps of preparing finely divided cadmium mercury telluride of desired composition, said finely divided cadmium mercury telluride having particle sizes all less than 150 Ft, mixing the particles of the finely divided cadmium mercury telluride to obtain a substantially even particle size distribution, preheating a die of desired dimensions to a temperature of about 300 C, adding a predetermined amount of mixed particles to the preheated die, applying compacting pressures to said amount in the range of 160 to 275 MPa to compact the finely divided cadmium mercury telluride into a coherent compact having a density of at least 97% of theoretical density, releasing the pressure and removing the compact having predetermined dimensions from the die, said predetermined amount of mixed particles being sufficient to form said compact of predetermined dimensions.
4. A method as claimed in claim 1,2 or 3, wherein the die is evacuated to a pressure of less than about 133 Pa absolute prior to applying compacting pressure.
5. A method as claimed in claim 1,2 or 3, wherein the particle sizes of the finely divided cadmium mercury telluride are in the range of about 150 to 44fit.
6. A method as claimed in claim 1,2, or 3, wherein the compacting pressure is applied for a period of time of not less than about one minute.
7. A method as claimed in claim 1 or 2, wherein the compacting pressure is in the range of about 400 to 1100 MPa.
8. A method as claimed in claim 1, wherein the die is at a temperature of about room temperature and the compacting pressure is at least about 400 MPa.
9. Sputtering targets consisting of compacts of cadmium mercury telluride prepared according to the method of claim 1,2 or 3.
10. Sputtering targets of coherent compacts of cadmium mercury telluride having a density of at least 97% of theoretical density prepared according to the method comprising the steps of preparing finely divided cadmium mercury telluride of the general formula Cd#Hg1.#Te wherein x has a value in the range of about 0.14 to 0.60, said finely divided cadmium mercurytelluride having particle sizes all less than 150 U# mixing the particles of the finely divided cadmium mercury telluride to obtain a substantially even particle size distribution, adding a predetermined amount of mixed particles of the finely divided cadmium mercury telluride to a die of desired dimensions and at room temperature, evacuating said die to a pressure of less than about 133 Pa absolute, applying a compacting pressure in the range of about 400 to 1100 MPa for a period of time of not less than one minute to compact the finely divided cadmium mercury telluride, releasing the pressure and removing the compact having predetermined dimensions from the die, said predetermined amount of mixed particles being sufficient to form said compact of predetermined dimensions.
11. Sputtering targets of coherent compacts of cadmium mercury telluride having a density of at least 97% of theoretical density prepared according to the method comprising the steps of preparing finely divided cadmium mercury telluride of the general formula CdxHg1 xTe wherein x has a value in the range of from about 0.14 to about 0.20, said finely divided cadmium mercury telluride having particle sizes all less than 150 fit,mixing the particles of the finely divided cadmium mercury telluride to obtain a substantially even particle size distribution, preheating a die of desired dimensions to a temperature in the range of about 100 to 3000C, adding a predetermined amount of mixed particles of the finely divided cadmium mercury telluride to the preheated die, evacuating said die to a pressure of less than about 133 Pa absolute, applying a compacting pressure in the range of about 400 to 1100 MPa for a period of time not less than one munute to compact the finely divided cadmium mercury telluride, releasing the pressure and removing the compact having predetermined dimensions from the die, said predetermined amount of mixed particles being sufficient to form said compact of predetermined dimensions.
12. Sputtering targets of coherent compacts of cadmium mercury telluride having a density of at least 97% of theoretical density prepared according to the method comprising the steps of preparing finely divided cadmium mercury telluride of the general formula CdxHg1-xTe wherein x has a value in the range of from about 0.20 to about 0.60, said finely divided cadmium mercury telluride having particle sizes all less than 150 Ft, mixing the particles of the finely divided cadmium mercury tel!uride to obtain a substantially even particle size distribution, preheating a die of desired dimensions to a temperature of about 300 C, adding a predetermined amount of mixed particles of the finely divided cadmium mercury telluride to the preheated die, evacuating said die to pressure of less than about 133 Pa absolute, applying a compacting pressure in the range of about 160 to 275 MPa for a period of time of not less than one minute to compact the finely divided cadmium mercury telluride, releasing the pressure and removing the compact having predetermined dimensions from the die, said predetermined amount of mixed particles being sufficient to form said compact of predetermined dimensions.
13. A method for the preparation of sputtering targets substantially as herein described in any of the examples.
14. Sputtering targets prepared by a method as described in any of the examples.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA316,105A CA1110421A (en) | 1978-11-09 | 1978-11-09 | Cadmium mercury telluride sputtering targets |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2037264A true GB2037264A (en) | 1980-07-09 |
| GB2037264B GB2037264B (en) | 1982-09-29 |
Family
ID=4112934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7936723A Expired GB2037264B (en) | 1978-11-09 | 1979-10-23 | Cadmium mercury telluride sputtering targets |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5565338A (en) |
| CA (1) | CA1110421A (en) |
| DE (1) | DE2944482A1 (en) |
| FR (1) | FR2441582A1 (en) |
| GB (1) | GB2037264B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL60734A (en) * | 1979-08-30 | 1984-03-30 | Santa Barbara Res Center | Production of single crystal mercury cadmium telluride |
| DE3300525A1 (en) * | 1983-01-10 | 1984-07-12 | Merck Patent Gmbh, 6100 Darmstadt | TARGETS FOR CATHOD SPRAYING |
| DE3627775A1 (en) * | 1986-08-16 | 1988-02-18 | Demetron | METHOD FOR PRODUCING TARGETS |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2265872B1 (en) * | 1974-03-27 | 1977-10-14 | Anvar |
-
1978
- 1978-11-09 CA CA316,105A patent/CA1110421A/en not_active Expired
-
1979
- 1979-10-23 GB GB7936723A patent/GB2037264B/en not_active Expired
- 1979-11-03 DE DE19792944482 patent/DE2944482A1/en active Granted
- 1979-11-07 JP JP14343979A patent/JPS5565338A/en active Pending
- 1979-11-09 FR FR7927738A patent/FR2441582A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5565338A (en) | 1980-05-16 |
| FR2441582A1 (en) | 1980-06-13 |
| DE2944482C2 (en) | 1988-09-08 |
| CA1110421A (en) | 1981-10-13 |
| FR2441582B1 (en) | 1985-04-19 |
| GB2037264B (en) | 1982-09-29 |
| DE2944482A1 (en) | 1980-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR950012811B1 (en) | Sputtering target and method for making the same | |
| EP0483375B1 (en) | Sputtering target and production thereof | |
| US5306569A (en) | Titanium-tungsten target material and manufacturing method thereof | |
| US5618397A (en) | Silicide targets for sputtering | |
| KR100755724B1 (en) | Manufacturing of high density intermetallic sputter targets | |
| CN113579233B (en) | Tungsten-titanium alloy target material and preparation method and application thereof | |
| EP0616045B1 (en) | Silicide targets for sputtering and method of manufacturing the same | |
| KR20130043690A (en) | Tungsten target and method for producing same | |
| JP2757287B2 (en) | Manufacturing method of tungsten target | |
| EP1420002A1 (en) | Silicon monoxide sintered product and method for production thereof | |
| CN1607054B (en) | High purity metal Mo coarse powder and sintered sputtering target produced by thereof, and manufacture method of high-purity Mo coarse powder | |
| GB2037264A (en) | Cadmium mercury telluride sputtering targets | |
| US4231981A (en) | Cadmium mercury telluride sputtering targets | |
| JP4689011B2 (en) | Low oxygen high density Cu / Cr sputtering target manufacturing method | |
| EP0390499A2 (en) | Process for producing bismuth-based superconducting material | |
| US5561833A (en) | Method of making high oxygen chromium target | |
| EP0156054B1 (en) | Porous silicon nitride semiconductor dopant carriers | |
| JP3414412B2 (en) | Manufacturing method of sputtering target | |
| JP2000045065A (en) | Sputtering target | |
| JPH0247261A (en) | Silicide target and production thereof | |
| JPS5944773B2 (en) | Method for manufacturing high-density polycrystalline material | |
| JPS61124565A (en) | Manufacture of tellurium or tellurium alloy target material | |
| US5397373A (en) | Raw material for high oxygen chromium target | |
| JPH03193605A (en) | Production of target material for forming oxide superconducting thin film | |
| CN112144024B (en) | Chromium silicide target material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19921023 |