GB2023857B - Photoresist structure particularly suitable for photolithohraphically depositing parallel metal strips on to a base substrate and the method for forming it - Google Patents

Photoresist structure particularly suitable for photolithohraphically depositing parallel metal strips on to a base substrate and the method for forming it

Info

Publication number
GB2023857B
GB2023857B GB7909598A GB7909598A GB2023857B GB 2023857 B GB2023857 B GB 2023857B GB 7909598 A GB7909598 A GB 7909598A GB 7909598 A GB7909598 A GB 7909598A GB 2023857 B GB2023857 B GB 2023857B
Authority
GB
United Kingdom
Prior art keywords
photolithohraphically
forming
particularly suitable
base substrate
metal strips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7909598A
Other versions
GB2023857A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CISE Centro Informazioni Studi e Esperienze SpA
Original Assignee
CISE Centro Informazioni Studi e Esperienze SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CISE Centro Informazioni Studi e Esperienze SpA filed Critical CISE Centro Informazioni Studi e Esperienze SpA
Publication of GB2023857A publication Critical patent/GB2023857A/en
Application granted granted Critical
Publication of GB2023857B publication Critical patent/GB2023857B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
GB7909598A 1978-06-26 1979-03-19 Photoresist structure particularly suitable for photolithohraphically depositing parallel metal strips on to a base substrate and the method for forming it Expired GB2023857B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT24955/78A IT1096042B (en) 1978-06-26 1978-06-26 STRUCTURE OF PHOTORESIST PARTICULARLY SUITABLE FOR THE PHOTOLITHOGRAPHIC DEPOSITION OF PARALLEL METAL STRIPS ON A BASIC SUBSTRATE AND PROCEDURE FOR ITS REALIZATION

Publications (2)

Publication Number Publication Date
GB2023857A GB2023857A (en) 1980-01-03
GB2023857B true GB2023857B (en) 1982-09-15

Family

ID=11215250

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7909598A Expired GB2023857B (en) 1978-06-26 1979-03-19 Photoresist structure particularly suitable for photolithohraphically depositing parallel metal strips on to a base substrate and the method for forming it

Country Status (4)

Country Link
DE (1) DE2911976A1 (en)
FR (1) FR2432727A1 (en)
GB (1) GB2023857B (en)
IT (1) IT1096042B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3138761A1 (en) * 1981-09-29 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Method for producing overlap-weighted interdigital structures
GB8331158D0 (en) * 1983-11-22 1983-12-29 British Telecomm Metal/semiconductor deposition
US4525448A (en) * 1984-01-06 1985-06-25 International Telephone And Telegraph Corporation Method of fabricating sub-half-micron-size gates on semiconductor substrates
JPH0279437A (en) * 1988-09-14 1990-03-20 Mitsubishi Electric Corp Manufacture of semiconductor device
US7189751B2 (en) 2001-06-25 2007-03-13 Nippon Soda Co., Ltd. Oxa(thia)zolidine compounds, process for preparation thereof and anti-inflammatory agents

Also Published As

Publication number Publication date
IT7824955A0 (en) 1978-06-26
GB2023857A (en) 1980-01-03
IT1096042B (en) 1985-08-17
FR2432727A1 (en) 1980-02-29
DE2911976A1 (en) 1980-01-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee