GB202003442D0 - Insulated gate switched transistor - Google Patents
Insulated gate switched transistorInfo
- Publication number
- GB202003442D0 GB202003442D0 GBGB2003442.7A GB202003442A GB202003442D0 GB 202003442 D0 GB202003442 D0 GB 202003442D0 GB 202003442 A GB202003442 A GB 202003442A GB 202003442 D0 GB202003442 D0 GB 202003442D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- insulated gate
- switched transistor
- gate switched
- transistor
- insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2003442.7A GB2592928A (en) | 2020-03-10 | 2020-03-10 | Insulated gate switched transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2003442.7A GB2592928A (en) | 2020-03-10 | 2020-03-10 | Insulated gate switched transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
GB202003442D0 true GB202003442D0 (en) | 2020-04-22 |
GB2592928A GB2592928A (en) | 2021-09-15 |
Family
ID=70278426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2003442.7A Pending GB2592928A (en) | 2020-03-10 | 2020-03-10 | Insulated gate switched transistor |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2592928A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024017136A1 (en) * | 2022-07-18 | 2024-01-25 | 无锡华润华晶微电子有限公司 | Semiconductor device structure and manufacturing method therefor |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9313843D0 (en) * | 1993-07-05 | 1993-08-18 | Philips Electronics Uk Ltd | A semiconductor device comprising an insulated gate field effect transistor |
GB2321337B (en) * | 1997-01-21 | 2001-11-07 | Plessey Semiconductors Ltd | Improvements in or relating to semiconductor devices |
JP4284689B2 (en) * | 2006-03-24 | 2009-06-24 | 富士フイルム株式会社 | Insulated gate thyristor |
JP2012169384A (en) * | 2011-02-11 | 2012-09-06 | Denso Corp | Silicon carbide semiconductor device and method of manufacturing the same |
JP5728992B2 (en) * | 2011-02-11 | 2015-06-03 | 株式会社デンソー | Silicon carbide semiconductor device and manufacturing method thereof |
-
2020
- 2020-03-10 GB GB2003442.7A patent/GB2592928A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024017136A1 (en) * | 2022-07-18 | 2024-01-25 | 无锡华润华晶微电子有限公司 | Semiconductor device structure and manufacturing method therefor |
Also Published As
Publication number | Publication date |
---|---|
GB2592928A (en) | 2021-09-15 |
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