GB201703594D0 - Single photon source - Google Patents

Single photon source

Info

Publication number
GB201703594D0
GB201703594D0 GBGB1703594.0A GB201703594A GB201703594D0 GB 201703594 D0 GB201703594 D0 GB 201703594D0 GB 201703594 A GB201703594 A GB 201703594A GB 201703594 D0 GB201703594 D0 GB 201703594D0
Authority
GB
United Kingdom
Prior art keywords
single photon
photon source
source
photon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1703594.0A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lancaster University Business Enterprises Ltd
Original Assignee
Lancaster University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lancaster University filed Critical Lancaster University
Priority to GBGB1703594.0A priority Critical patent/GB201703594D0/en
Publication of GB201703594D0 publication Critical patent/GB201703594D0/en
Priority to PCT/GB2018/050572 priority patent/WO2018162894A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Luminescent Compositions (AREA)
GBGB1703594.0A 2017-03-07 2017-03-07 Single photon source Ceased GB201703594D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB1703594.0A GB201703594D0 (en) 2017-03-07 2017-03-07 Single photon source
PCT/GB2018/050572 WO2018162894A1 (en) 2017-03-07 2018-03-07 Single photon source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1703594.0A GB201703594D0 (en) 2017-03-07 2017-03-07 Single photon source

Publications (1)

Publication Number Publication Date
GB201703594D0 true GB201703594D0 (en) 2017-04-19

Family

ID=58543961

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1703594.0A Ceased GB201703594D0 (en) 2017-03-07 2017-03-07 Single photon source

Country Status (2)

Country Link
GB (1) GB201703594D0 (en)
WO (1) WO2018162894A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU189453U1 (en) * 2019-03-13 2019-05-22 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Single-photon radiation source based on an LED emitting heterostructure with epitaxial semiconductor QDs in an InAs / AlGaAs system manufactured by the MPE method
RU209708U1 (en) * 2021-12-17 2022-03-18 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО) SEMICONDUCTOR HETEROSTRUCTURE WITH REDUCED QUANTUM DOTS SURFACE DENSITY

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7019333B1 (en) * 1999-11-16 2006-03-28 Kabushiki Kaisha Toshiba Photon source
FR2839388A1 (en) * 2002-05-03 2003-11-07 St Microelectronics Sa Integrated circuit using a MOS transistor with a mushroom shaped grid to generate a single electron to a quantum box to generate the emission of a single photon
JP4360812B2 (en) * 2003-02-20 2009-11-11 富士通株式会社 Single photon generator and single photon generation method
GB2531568B (en) * 2014-10-22 2018-07-04 Toshiba Res Europe Limited An optical device and method of fabricating an optical device
GB201503498D0 (en) * 2015-03-02 2015-04-15 Univ Lancaster Vertical-cavity surface-emitting laser

Also Published As

Publication number Publication date
WO2018162894A1 (en) 2018-09-13

Similar Documents

Publication Publication Date Title
IL263515A (en) Radiation source
IL284458B (en) Electron source
EP3180652A4 (en) Multiple-laser light source
TWI560513B (en) Light source system
IL268709A (en) Radiation source
HK1252715A1 (en) Light source
ZA201902995B (en) X-ray source
HK1256797A1 (en) Multi-theater light source
PL3589687T3 (en) Transparent unit
IL273374B1 (en) Radiation source
GB2571607B (en) Ion source
GB201602502D0 (en) Light source
EP3111133A4 (en) Flexible light source
GB201408674D0 (en) A photon source
EP3129134A4 (en) Radiation source assembly
GB201711138D0 (en) Single photon detector
GB201703594D0 (en) Single photon source
GB201506352D0 (en) Coherent radiation source
RS63035B1 (en) Tunnel light
EP3189550B8 (en) Light source
EP3625597C0 (en) Coherent single photon source
GB201410669D0 (en) Light source
SG11202002991YA (en) Arc source
PL3578014T3 (en) Plasma source
GB201703260D0 (en) Inexhaustable power source

Legal Events

Date Code Title Description
COOA Change in applicant's name or ownership of the application

Owner name: LANCASTER UNIVERSITY BUSINESS ENTERPRISES LIMITED

Free format text: FORMER OWNER: UNIVERSITY OF LANCASTER

AT Applications terminated before publication under section 16(1)