GB201211964D0 - Single crystal diamond substrates for synthesis of single crystal diamond material - Google Patents

Single crystal diamond substrates for synthesis of single crystal diamond material

Info

Publication number
GB201211964D0
GB201211964D0 GB201211964A GB201211964A GB201211964D0 GB 201211964 D0 GB201211964 D0 GB 201211964D0 GB 201211964 A GB201211964 A GB 201211964A GB 201211964 A GB201211964 A GB 201211964A GB 201211964 D0 GB201211964 D0 GB 201211964D0
Authority
GB
United Kingdom
Prior art keywords
single crystal
crystal diamond
diamond material
substrate
ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB201211964A
Other versions
GB2492661B (en
GB2492661A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cardozo Damian N N
Original Assignee
Cardozo Damian N N
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cardozo Damian N N filed Critical Cardozo Damian N N
Publication of GB201211964D0 publication Critical patent/GB201211964D0/en
Publication of GB2492661A publication Critical patent/GB2492661A/en
Application granted granted Critical
Publication of GB2492661B publication Critical patent/GB2492661B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Mechanical Engineering (AREA)

Abstract

A method of growing synthetic single crystal diamond material comprises: providing a single crystal diamond substrate; and growing synthetic single crystal diamond material on said single crystal diamond substrate, wherein said single crystal diamond substrate is formed of single crystal diamond material which is irradiated prior to growing synthetic single crystal diamond material thereon, and wherein the irradiation comprises irradiating the diamond material to a depth of 5µm or greater. The substrate may be formed from one of: single crystal synthetic HPHT material having a total equivalent isolated nitrogen concentration of 1-800 ppm; single crystal CVD diamond material have a total equivalent isolated nitrogen concentration of 0.005-100 ppm; or a natural diamond material having a total nitrogen concentration of 1-2000 ppm. The method may further comprise cooling the diamond material during the irradiation and annealing the diamond material. A composite substrate array for carrying out the method is also disclosed.
GB1211964.0A 2011-07-14 2012-07-05 Single crystal diamond substrates for synthesis of single crystal diamond material Expired - Fee Related GB2492661B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB201112113A GB201112113D0 (en) 2011-07-14 2011-07-14 Single crystal diamond substrates for synthesis of single crystal diamond material

Publications (3)

Publication Number Publication Date
GB201211964D0 true GB201211964D0 (en) 2012-08-15
GB2492661A GB2492661A (en) 2013-01-09
GB2492661B GB2492661B (en) 2014-05-21

Family

ID=44586596

Family Applications (2)

Application Number Title Priority Date Filing Date
GB201112113A Ceased GB201112113D0 (en) 2011-07-14 2011-07-14 Single crystal diamond substrates for synthesis of single crystal diamond material
GB1211964.0A Expired - Fee Related GB2492661B (en) 2011-07-14 2012-07-05 Single crystal diamond substrates for synthesis of single crystal diamond material

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB201112113A Ceased GB201112113D0 (en) 2011-07-14 2011-07-14 Single crystal diamond substrates for synthesis of single crystal diamond material

Country Status (2)

Country Link
GB (2) GB201112113D0 (en)
WO (1) WO2013007605A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201516814D0 (en) 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
WO2023227606A1 (en) * 2022-05-23 2023-11-30 Adamant Quanta Ab Method and system for processing a diamond

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA741183B (en) 1974-02-22 1975-10-29 De Beers Ind Diamond Abrasive particles
US4273561A (en) 1975-08-27 1981-06-16 Fernandez Moran Villalobos Hum Ultrasharp polycrystalline diamond edges, points, and improved diamond composites, and methods of making and irradiating same
GB1588445A (en) 1977-05-26 1981-04-23 Nat Res Dev Toughening diamond
GB1588418A (en) 1978-05-17 1981-04-23 Atomic Energy Authority Uk Artefacts incorporating industrial diamonds
US4319889A (en) 1979-08-06 1982-03-16 Villalobos Humberto F Ultrasharp diamond edges and points and methods of making same by precision micro-irradiation techniques
DE3202697A1 (en) 1982-01-28 1983-08-04 Kapp & Co Werkzeugmaschinenfabrik, 8630 Coburg METHOD AND DEVICE FOR FINE-PROFILING TOOLS COATED WITH SUPER-HARD MATERIALS
SU1346418A1 (en) 1985-10-18 1987-10-23 Всесоюзный Научно-Исследовательский Конструкторско-Технологический Институт Подшипниковой Промышленности Method of producing diamond tool
JP2571795B2 (en) 1987-11-17 1997-01-16 住友電気工業株式会社 Purple diamond and method for producing the same
JPH0297488A (en) * 1988-10-05 1990-04-10 Toyota Central Res & Dev Lab Inc Formation of diamond pattern
RU1813812C (en) 1991-03-05 1993-05-07 Научно-исследовательский институт высоких напряжений при Томском политехническом институте им.С.М.Кирова Process for applying composite chromium coatings
RU1813126C (en) * 1991-08-02 1993-04-30 Kalinin Vladimir D Method of hardening crystals
JP3314444B2 (en) 1993-03-15 2002-08-12 住友電気工業株式会社 Red and pink diamonds
EP1097107B1 (en) * 1998-06-24 2006-03-01 Jacques Pierre Friedrich Sellschop A method of altering the colour of a material
JP2006021963A (en) 2004-07-08 2006-01-26 Sumitomo Electric Ind Ltd Method for manufacturing high hardness diamond crystal
WO2007029269A1 (en) * 2005-09-05 2007-03-15 Rajneesh Bhandari Synthesis of large homoepitaxial monocrystalline diamond
US9255009B2 (en) * 2009-06-26 2016-02-09 Element Six Technologies Limited Diamond material
GB2476306B (en) * 2009-12-21 2012-07-11 Element Six Ltd Single crystal diamond material
GB2476478A (en) * 2009-12-22 2011-06-29 Element Six Ltd Chemical vapour deposition diamond synthesis

Also Published As

Publication number Publication date
GB201112113D0 (en) 2011-08-31
GB2492661B (en) 2014-05-21
WO2013007605A1 (en) 2013-01-17
GB2492661A (en) 2013-01-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160705