GB2011179B - Integrated semiconductor device including static induction transistor - Google Patents
Integrated semiconductor device including static induction transistorInfo
- Publication number
- GB2011179B GB2011179B GB7843074A GB7843074A GB2011179B GB 2011179 B GB2011179 B GB 2011179B GB 7843074 A GB7843074 A GB 7843074A GB 7843074 A GB7843074 A GB 7843074A GB 2011179 B GB2011179 B GB 2011179B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- device including
- integrated semiconductor
- static induction
- including static
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006698 induction Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13275677A JPS5466080A (en) | 1977-11-05 | 1977-11-05 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2011179A GB2011179A (en) | 1979-07-04 |
GB2011179B true GB2011179B (en) | 1982-06-16 |
Family
ID=15088812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7843074A Expired GB2011179B (en) | 1977-11-05 | 1978-11-03 | Integrated semiconductor device including static induction transistor |
Country Status (6)
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4284997A (en) * | 1977-07-07 | 1981-08-18 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction transistor and its applied devices |
JPS56103448A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Semiconductor ic device |
US4362981A (en) * | 1980-09-12 | 1982-12-07 | Kabushiki Kaisha Daini Seikosha | Driving circuit for a stepping motor |
GB2162370B (en) * | 1984-07-26 | 1987-10-28 | Japan Res Dev Corp | Static induction transistor and integrated circuit comprising such a transistor |
JP2659931B2 (ja) * | 1985-06-29 | 1997-09-30 | 財団法人 半導体研究振興会 | 光制御電力変換装置 |
US5170229A (en) * | 1988-01-16 | 1992-12-08 | Link Analytical Limited | Junction field effect transistors with injector region |
US5192704A (en) * | 1989-06-30 | 1993-03-09 | Texas Instruments Incorporated | Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell |
US5136534A (en) * | 1989-06-30 | 1992-08-04 | Texas Instruments Incorporated | Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell |
USD876693S1 (en) | 2017-08-03 | 2020-02-25 | E. Mishan & Sons, Inc. | Flashlight baton with crenulate sliding bezel |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3295030A (en) * | 1963-12-18 | 1966-12-27 | Signetics Corp | Field effect transistor and method |
US3453507A (en) * | 1967-04-04 | 1969-07-01 | Honeywell Inc | Photo-detector |
US3721839A (en) * | 1971-03-24 | 1973-03-20 | Philips Corp | Solid state imaging device with fet sensor |
NL7308240A (US20020051482A1-20020502-M00012.png) * | 1973-06-14 | 1974-12-17 | ||
GB1444951A (en) * | 1973-06-18 | 1976-08-04 | Mullard Ltd | Electronic solid state devices |
JPS5510152B2 (US20020051482A1-20020502-M00012.png) * | 1974-03-08 | 1980-03-14 | ||
JPS5811102B2 (ja) * | 1975-12-09 | 1983-03-01 | ザイダンホウジン ハンドウタイケンキユウシンコウカイ | 半導体集積回路 |
JPS608628B2 (ja) * | 1976-07-05 | 1985-03-04 | ヤマハ株式会社 | 半導体集積回路装置 |
JPS5838938B2 (ja) * | 1976-08-03 | 1983-08-26 | 財団法人半導体研究振興会 | 半導体集積回路 |
NL191683C (nl) * | 1977-02-21 | 1996-02-05 | Zaidan Hojin Handotai Kenkyu | Halfgeleidergeheugenschakeling. |
-
1977
- 1977-11-05 JP JP13275677A patent/JPS5466080A/ja active Pending
-
1978
- 1978-10-26 US US05/954,917 patent/US4200879A/en not_active Expired - Lifetime
- 1978-10-26 NL NL7810677A patent/NL7810677A/xx not_active Application Discontinuation
- 1978-11-03 GB GB7843074A patent/GB2011179B/en not_active Expired
- 1978-11-03 DE DE19782847822 patent/DE2847822A1/de active Granted
- 1978-11-03 FR FR7831213A patent/FR2408220A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2408220B1 (US20020051482A1-20020502-M00012.png) | 1982-08-27 |
DE2847822A1 (de) | 1979-05-10 |
NL7810677A (nl) | 1979-05-08 |
GB2011179A (en) | 1979-07-04 |
FR2408220A1 (fr) | 1979-06-01 |
JPS5466080A (en) | 1979-05-28 |
DE2847822C2 (US20020051482A1-20020502-M00012.png) | 1987-04-02 |
US4200879A (en) | 1980-04-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Effective date: 19981102 |