GB2005071B - Junction field effect transistor logic semiconductor device - Google Patents
Junction field effect transistor logic semiconductor deviceInfo
- Publication number
- GB2005071B GB2005071B GB7833006A GB7833006A GB2005071B GB 2005071 B GB2005071 B GB 2005071B GB 7833006 A GB7833006 A GB 7833006A GB 7833006 A GB7833006 A GB 7833006A GB 2005071 B GB2005071 B GB 2005071B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- field effect
- effect transistor
- transistor logic
- junction field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
- H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9999477A JPS5432986A (en) | 1977-08-19 | 1977-08-19 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2005071A GB2005071A (en) | 1979-04-11 |
| GB2005071B true GB2005071B (en) | 1982-03-17 |
Family
ID=14262177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7833006A Expired GB2005071B (en) | 1977-08-19 | 1978-08-11 | Junction field effect transistor logic semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5432986A (OSRAM) |
| CH (1) | CH623168A5 (OSRAM) |
| DE (1) | DE2833841A1 (OSRAM) |
| GB (1) | GB2005071B (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6123115Y2 (OSRAM) * | 1980-02-09 | 1986-07-10 | ||
| DE3841777C2 (de) * | 1988-12-12 | 1994-06-23 | Telefunken Microelectron | Halbleiteranordnung mit vertikalem npn-Planartransistor |
-
1977
- 1977-08-19 JP JP9999477A patent/JPS5432986A/ja active Pending
-
1978
- 1978-08-02 DE DE19782833841 patent/DE2833841A1/de not_active Withdrawn
- 1978-08-11 GB GB7833006A patent/GB2005071B/en not_active Expired
- 1978-08-21 CH CH883278A patent/CH623168A5/fr not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5432986A (en) | 1979-03-10 |
| CH623168A5 (OSRAM) | 1981-05-15 |
| GB2005071A (en) | 1979-04-11 |
| DE2833841A1 (de) | 1979-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |