GB1593070A - Semiconductor storage devices and their operation - Google Patents
Semiconductor storage devices and their operation Download PDFInfo
- Publication number
- GB1593070A GB1593070A GB51432/17A GB5143277A GB1593070A GB 1593070 A GB1593070 A GB 1593070A GB 51432/17 A GB51432/17 A GB 51432/17A GB 5143277 A GB5143277 A GB 5143277A GB 1593070 A GB1593070 A GB 1593070A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- gate electrode
- substrate
- regions
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 54
- 238000009792 diffusion process Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 230000005669 field effect Effects 0.000 claims description 8
- 238000009877 rendering Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005513 bias potential Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000013500 data storage Methods 0.000 claims description 2
- 230000006870 function Effects 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000014759 maintenance of location Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 230000004913 activation Effects 0.000 claims 1
- 230000001186 cumulative effect Effects 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 230000010287 polarization Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 30
- 208000037516 chromosome inversion disease Diseases 0.000 description 21
- 239000002800 charge carrier Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75588776A | 1976-12-30 | 1976-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1593070A true GB1593070A (en) | 1981-07-15 |
Family
ID=25041090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB51432/17A Expired GB1593070A (en) | 1976-12-30 | 1977-12-09 | Semiconductor storage devices and their operation |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5384577A (enExample) |
| DE (1) | DE2756915A1 (enExample) |
| FR (1) | FR2376493A1 (enExample) |
| GB (1) | GB1593070A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5510630A (en) * | 1993-10-18 | 1996-04-23 | Westinghouse Electric Corporation | Non-volatile random access memory cell constructed of silicon carbide |
| US5385855A (en) * | 1994-02-24 | 1995-01-31 | General Electric Company | Fabrication of silicon carbide integrated circuits |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147280A (en) * | 1975-06-13 | 1976-12-17 | Hitachi Ltd | Semiconductor device |
-
1977
- 1977-11-24 FR FR7736215A patent/FR2376493A1/fr active Granted
- 1977-12-09 GB GB51432/17A patent/GB1593070A/en not_active Expired
- 1977-12-12 JP JP14824777A patent/JPS5384577A/ja active Granted
- 1977-12-21 DE DE19772756915 patent/DE2756915A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5384577A (en) | 1978-07-26 |
| DE2756915A1 (de) | 1978-07-06 |
| JPS5635031B2 (enExample) | 1981-08-14 |
| FR2376493A1 (fr) | 1978-07-28 |
| FR2376493B1 (enExample) | 1980-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19941209 |