GB1578943A - Integrated circuits - Google Patents

Integrated circuits Download PDF

Info

Publication number
GB1578943A
GB1578943A GB35560/77A GB3556077A GB1578943A GB 1578943 A GB1578943 A GB 1578943A GB 35560/77 A GB35560/77 A GB 35560/77A GB 3556077 A GB3556077 A GB 3556077A GB 1578943 A GB1578943 A GB 1578943A
Authority
GB
United Kingdom
Prior art keywords
layer
silicon
recesses
substrate
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35560/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1578943A publication Critical patent/GB1578943A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps

Landscapes

  • Element Separation (AREA)
GB35560/77A 1976-09-02 1977-08-24 Integrated circuits Expired GB1578943A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/719,888 US4106050A (en) 1976-09-02 1976-09-02 Integrated circuit structure with fully enclosed air isolation

Publications (1)

Publication Number Publication Date
GB1578943A true GB1578943A (en) 1980-11-12

Family

ID=24891786

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35560/77A Expired GB1578943A (en) 1976-09-02 1977-08-24 Integrated circuits

Country Status (5)

Country Link
US (1) US4106050A (enExample)
JP (1) JPS5330286A (enExample)
DE (1) DE2738961A1 (enExample)
FR (1) FR2363894A1 (enExample)
GB (1) GB1578943A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE31937E (en) * 1977-11-29 1985-07-02 Fujitsu Ltd. Semiconductor device and method for its preparation
US4231057A (en) * 1978-11-13 1980-10-28 Fujitsu Limited Semiconductor device and method for its preparation
JPS5795769A (en) * 1980-12-05 1982-06-14 Fuji Photo Film Co Ltd Semiconductor image pickup device
US4356211A (en) * 1980-12-19 1982-10-26 International Business Machines Corporation Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon
JPS57168353U (enExample) * 1981-04-17 1982-10-23
JPS61295744A (ja) * 1985-06-24 1986-12-26 Nippon Telegr & Teleph Corp <Ntt> 電話機
JPH0379559U (enExample) * 1989-12-06 1991-08-14
US5599745A (en) * 1995-06-07 1997-02-04 Micron Technology, Inc. Method to provide a void between adjacent conducting lines in a semiconductor device
KR100268878B1 (ko) 1998-05-08 2000-10-16 김영환 반도체소자 및 그의 제조방법
US6268637B1 (en) * 1998-10-22 2001-07-31 Advanced Micro Devices, Inc. Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabrication
DE10157785A1 (de) * 2001-11-27 2003-06-12 Austriamicrocsystems Ag Schlos Isolationsgraben für eine intergrierte Schaltung und Verfahren zu dessen Herstellung
DE102007001523A1 (de) * 2007-01-10 2008-07-17 Infineon Technologies Ag Halbleiterschaltungsanordnung und Verfahren zu deren Herstellung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439712A1 (de) * 1964-08-08 1968-11-28 Telefunken Patent Verfahren zur Herstellung isolierter einkristalliner Bereiche mit geringer Nebenschlusskapazitaet im Halbleiterkoerper einer mikrominiaturisierten Schaltungsanordnung auf Festkoerperbasis
US3332137A (en) * 1964-09-28 1967-07-25 Rca Corp Method of isolating chips of a wafer of semiconductor material
US3489961A (en) * 1966-09-29 1970-01-13 Fairchild Camera Instr Co Mesa etching for isolation of functional elements in integrated circuits
US3905037A (en) * 1966-12-30 1975-09-09 Texas Instruments Inc Integrated circuit components in insulated islands of integrated semiconductor materials in a single substrate
US3513022A (en) * 1967-04-26 1970-05-19 Rca Corp Method of fabricating semiconductor devices
US3647585A (en) * 1969-05-23 1972-03-07 Bell Telephone Labor Inc Method of eliminating pinhole shorts in an air-isolated crossover
US3787710A (en) * 1972-01-25 1974-01-22 J Cunningham Integrated circuit structure having electrically isolated circuit components
JPS5132547B2 (enExample) * 1972-08-18 1976-09-13

Also Published As

Publication number Publication date
FR2363894A1 (fr) 1978-03-31
JPS5515864B2 (enExample) 1980-04-26
US4106050A (en) 1978-08-08
FR2363894B1 (enExample) 1979-03-30
JPS5330286A (en) 1978-03-22
DE2738961A1 (de) 1978-03-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee