GB1561953A - Photodiodes - Google Patents
Photodiodes Download PDFInfo
- Publication number
- GB1561953A GB1561953A GB3288177A GB3288177A GB1561953A GB 1561953 A GB1561953 A GB 1561953A GB 3288177 A GB3288177 A GB 3288177A GB 3288177 A GB3288177 A GB 3288177A GB 1561953 A GB1561953 A GB 1561953A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photodiode
- type layer
- layer
- type
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 229910052796 boron Inorganic materials 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 239000012298 atmosphere Substances 0.000 claims description 9
- -1 boron ions Chemical class 0.000 claims description 8
- 238000005247 gettering Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 17
- 229910052698 phosphorus Inorganic materials 0.000 description 17
- 239000011574 phosphorus Substances 0.000 description 17
- 239000011521 glass Substances 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- 229910052681 coesite Inorganic materials 0.000 description 9
- 229910052906 cristobalite Inorganic materials 0.000 description 9
- 229910052682 stishovite Inorganic materials 0.000 description 9
- 229910052905 tridymite Inorganic materials 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 108091006146 Channels Proteins 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910018885 Pt—Au Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910020667 PBr3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- IPNPIHIZVLFAFP-UHFFFAOYSA-N phosphorus tribromide Chemical compound BrP(Br)Br IPNPIHIZVLFAFP-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 230000007561 response to light intensity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71239276A | 1976-08-06 | 1976-08-06 | |
| US05/793,493 US4127932A (en) | 1976-08-06 | 1977-05-04 | Method of fabricating silicon photodiodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1561953A true GB1561953A (en) | 1980-03-05 |
Family
ID=27108828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3288177A Expired GB1561953A (en) | 1976-08-06 | 1977-08-05 | Photodiodes |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5341193A (sh) |
| CA (1) | CA1078948A (sh) |
| DE (1) | DE2734726A1 (sh) |
| FR (1) | FR2360998A1 (sh) |
| GB (1) | GB1561953A (sh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7893515B2 (en) | 2000-11-13 | 2011-02-22 | Sony Corporation | Photodetector integrated chip |
| CN114975672A (zh) * | 2021-02-26 | 2022-08-30 | 中国科学院半导体研究所 | 背入射近红外增强硅雪崩光电探测器的结构及制备方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3001899A1 (de) * | 1980-01-19 | 1981-07-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Planar-fototransistor |
| JPS5789271A (en) * | 1980-11-25 | 1982-06-03 | Moririka:Kk | Compound semiconductor element |
| JPS57104275A (en) * | 1980-12-19 | 1982-06-29 | Nec Corp | Light receiving element |
| US4616247A (en) * | 1983-11-10 | 1986-10-07 | At&T Bell Laboratories | P-I-N and avalanche photodiodes |
| CA1301895C (en) * | 1989-01-12 | 1992-05-26 | Robert J. Mcintyre | Silicon avalanche photodiode with low multiplication noise |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3244567A (en) * | 1962-09-10 | 1966-04-05 | Trw Semiconductors Inc | Impurity diffusion method |
| US3534231A (en) * | 1968-02-15 | 1970-10-13 | Texas Instruments Inc | Low bulk leakage current avalanche photodiode |
| US3886579A (en) * | 1972-07-28 | 1975-05-27 | Hitachi Ltd | Avalanche photodiode |
| JPS49116957A (sh) * | 1972-10-25 | 1974-11-08 | ||
| JPS5031777A (sh) * | 1973-07-21 | 1975-03-28 |
-
1977
- 1977-06-28 CA CA281,617A patent/CA1078948A/en not_active Expired
- 1977-08-02 DE DE19772734726 patent/DE2734726A1/de active Granted
- 1977-08-05 GB GB3288177A patent/GB1561953A/en not_active Expired
- 1977-08-05 FR FR7724317A patent/FR2360998A1/fr active Granted
- 1977-08-06 JP JP9376277A patent/JPS5341193A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7893515B2 (en) | 2000-11-13 | 2011-02-22 | Sony Corporation | Photodetector integrated chip |
| US8664031B2 (en) | 2000-11-13 | 2014-03-04 | Sony Corporation | Method of manufacturing photodiode intergrated chip |
| CN114975672A (zh) * | 2021-02-26 | 2022-08-30 | 中国科学院半导体研究所 | 背入射近红外增强硅雪崩光电探测器的结构及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6155791B2 (sh) | 1986-11-29 |
| DE2734726C2 (sh) | 1987-04-16 |
| FR2360998A1 (fr) | 1978-03-03 |
| JPS5341193A (en) | 1978-04-14 |
| DE2734726A1 (de) | 1978-02-09 |
| CA1078948A (en) | 1980-06-03 |
| FR2360998B1 (sh) | 1982-04-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19970804 |