GB1533657A - Electronic solid state devices - Google Patents
Electronic solid state devicesInfo
- Publication number
- GB1533657A GB1533657A GB54484/74A GB5448474A GB1533657A GB 1533657 A GB1533657 A GB 1533657A GB 54484/74 A GB54484/74 A GB 54484/74A GB 5448474 A GB5448474 A GB 5448474A GB 1533657 A GB1533657 A GB 1533657A
- Authority
- GB
- United Kingdom
- Prior art keywords
- grains
- grain
- zinc
- oxide
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 8
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 abstract 5
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 5
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 5
- 210000003739 neck Anatomy 0.000 abstract 5
- 238000000576 coating method Methods 0.000 abstract 4
- 239000011787 zinc oxide Substances 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 abstract 3
- 229910000464 lead oxide Inorganic materials 0.000 abstract 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract 2
- 229940112669 cuprous oxide Drugs 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 abstract 1
- 238000001311 chemical methods and process Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000011231 conductive filler Substances 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 239000000975 dye Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 239000000945 filler Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 150000003346 selenoethers Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB54484/74A GB1533657A (en) | 1974-12-17 | 1974-12-17 | Electronic solid state devices |
| DE19752555014 DE2555014A1 (de) | 1974-12-17 | 1975-12-06 | Halbleiteranordnungen |
| JP14968575A JPS536518B2 (he) | 1974-12-17 | 1975-12-17 | |
| FR7538585A FR2295573A1 (fr) | 1974-12-17 | 1975-12-17 | Perfectionnements aux dispositifs electroniques du type a l'etat solide |
| US05/810,666 US4107724A (en) | 1974-12-17 | 1977-06-28 | Surface controlled field effect solid state device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB54484/74A GB1533657A (en) | 1974-12-17 | 1974-12-17 | Electronic solid state devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1533657A true GB1533657A (en) | 1978-11-29 |
Family
ID=10471155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB54484/74A Expired GB1533657A (en) | 1974-12-17 | 1974-12-17 | Electronic solid state devices |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS536518B2 (he) |
| DE (1) | DE2555014A1 (he) |
| FR (1) | FR2295573A1 (he) |
| GB (1) | GB1533657A (he) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2170648A (en) * | 1985-02-01 | 1986-08-06 | Raytheon Co | Secondary emission cathode |
| GB2186091A (en) * | 1986-02-03 | 1987-08-05 | Atomic Energy Authority Uk | Semiconductor gas sensor |
| GB2399452A (en) * | 2003-02-13 | 2004-09-15 | Plastic Logic Ltd | An electronic device used as a non-linear capacitor. |
| US6950299B2 (en) | 2003-02-13 | 2005-09-27 | Plastic Logic Limited | Non-linear capacitors |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60171086U (ja) * | 1984-04-17 | 1985-11-13 | 本田技研工業株式会社 | 整流器付トランス装置 |
| ATE223139T1 (de) | 1998-04-22 | 2002-09-15 | Cambridge Consultants | Elektrolumineszierende vorrichtung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3745504A (en) * | 1971-03-22 | 1973-07-10 | Photophysics | Impregnated porous photoconductive device and method of manufacture |
| GB1444951A (en) * | 1973-06-18 | 1976-08-04 | Mullard Ltd | Electronic solid state devices |
-
1974
- 1974-12-17 GB GB54484/74A patent/GB1533657A/en not_active Expired
-
1975
- 1975-12-06 DE DE19752555014 patent/DE2555014A1/de not_active Withdrawn
- 1975-12-17 FR FR7538585A patent/FR2295573A1/fr active Granted
- 1975-12-17 JP JP14968575A patent/JPS536518B2/ja not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2170648A (en) * | 1985-02-01 | 1986-08-06 | Raytheon Co | Secondary emission cathode |
| US4677342A (en) * | 1985-02-01 | 1987-06-30 | Raytheon Company | Semiconductor secondary emission cathode and tube |
| GB2170648B (en) * | 1985-02-01 | 1989-07-26 | Raytheon Co | Crossed-field tube |
| GB2186091A (en) * | 1986-02-03 | 1987-08-05 | Atomic Energy Authority Uk | Semiconductor gas sensor |
| GB2399452A (en) * | 2003-02-13 | 2004-09-15 | Plastic Logic Ltd | An electronic device used as a non-linear capacitor. |
| US6950299B2 (en) | 2003-02-13 | 2005-09-27 | Plastic Logic Limited | Non-linear capacitors |
| GB2399452B (en) * | 2003-02-13 | 2006-07-05 | Plastic Logic Ltd | Non-linear capacitors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS536518B2 (he) | 1978-03-08 |
| DE2555014A1 (de) | 1976-06-24 |
| JPS5185687A (he) | 1976-07-27 |
| FR2295573B1 (he) | 1978-12-08 |
| FR2295573A1 (fr) | 1976-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |