GB1501015A - Semiconductive heterojunction devices - Google Patents
Semiconductive heterojunction devicesInfo
- Publication number
- GB1501015A GB1501015A GB12305/75A GB1230575A GB1501015A GB 1501015 A GB1501015 A GB 1501015A GB 12305/75 A GB12305/75 A GB 12305/75A GB 1230575 A GB1230575 A GB 1230575A GB 1501015 A GB1501015 A GB 1501015A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gap
- band
- materials
- glasses
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 8
- 239000011521 glass Substances 0.000 abstract 4
- 239000000203 mixture Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910005793 GeO 2 Inorganic materials 0.000 abstract 1
- 229910006404 SnO 2 Inorganic materials 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Glass Compositions (AREA)
- Light Receiving Elements (AREA)
Abstract
1501015 Semi-conductor devices INNOTECH CORP 25 March 1975 [27 March 1974 (2)] 12305/75 Heading H1K A heterojunetion is formed between a pair of semi-conductor materials, one of which has an energy band gap more than twice that of the other, the electron affinity of the wider bandgap material (i.e. the energy required to raise an electron from the bottom of the conduction band to free space potential) being substantially equal to or less than that of the narrower bandgap material. The invention is particularly applicable to PN-junction solar cells, in which the large disparity in band-gap provides high collective efficiency and a high built-in voltage, and the electron affinity condition ensures the absence of undesirable impedance associated with irregularities across the junction at the edge of the conduction or valence band (depending on conductivity type). In the preferred embodiments the narrower band-gap semiconductor is a conventional material such as Si, Ge, Si x Ge 1-x , GaAs, GaP or SiC while the wider band-gap material is a glassy amorphous material. Examples of materials suitable for the wider band-gap side of the junction are InO 3 , SnO 2 , CdO, Sb 2 O 3 , PbO, V 2 O 5 , GeO 2 , variogermanate glasses, variophosphate glasses, lead silicate glasses and glassy mixtures of these materials. Various specific combinations are disclosed, including N-type Si with the following glass composition (mole percentages): and GaP with the following P-type glass composition (mole percentages): Suitable electrode materials and configurations are described.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45531074A | 1974-03-27 | 1974-03-27 | |
US45530974A | 1974-03-27 | 1974-03-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1501015A true GB1501015A (en) | 1978-02-15 |
Family
ID=27037816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB12305/75A Expired GB1501015A (en) | 1974-03-27 | 1975-03-25 | Semiconductive heterojunction devices |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS50134392A (en) |
DE (1) | DE2512898A1 (en) |
FR (1) | FR2266312B3 (en) |
GB (1) | GB1501015A (en) |
IL (1) | IL46896A (en) |
NL (1) | NL7503616A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4121238A (en) * | 1977-02-16 | 1978-10-17 | Bell Telephone Laboratories, Incorporated | Metal oxide/indium phosphide devices |
JPH0658971B2 (en) * | 1984-02-23 | 1994-08-03 | キヤノン株式会社 | Photovoltaic device manufacturing method |
JPS6428968A (en) * | 1987-07-24 | 1989-01-31 | Fuji Electric Co Ltd | Solar cell |
JPH0652799B2 (en) * | 1987-08-15 | 1994-07-06 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US6259016B1 (en) * | 1999-03-05 | 2001-07-10 | Matsushita Electric Industrial Co., Ltd. | Solar cell |
-
1975
- 1975-03-21 IL IL46896A patent/IL46896A/en unknown
- 1975-03-24 DE DE19752512898 patent/DE2512898A1/en active Pending
- 1975-03-25 GB GB12305/75A patent/GB1501015A/en not_active Expired
- 1975-03-26 JP JP50035631A patent/JPS50134392A/ja active Pending
- 1975-03-26 NL NL7503616A patent/NL7503616A/en unknown
- 1975-03-26 FR FR7509513A patent/FR2266312B3/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IL46896A0 (en) | 1975-05-22 |
FR2266312B3 (en) | 1977-12-02 |
DE2512898A1 (en) | 1975-10-09 |
IL46896A (en) | 1977-07-31 |
NL7503616A (en) | 1975-09-30 |
JPS50134392A (en) | 1975-10-24 |
FR2266312A1 (en) | 1975-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |