GB1496372A - Electroluminescent device - Google Patents
Electroluminescent deviceInfo
- Publication number
- GB1496372A GB1496372A GB40905/75A GB4090575A GB1496372A GB 1496372 A GB1496372 A GB 1496372A GB 40905/75 A GB40905/75 A GB 40905/75A GB 4090575 A GB4090575 A GB 4090575A GB 1496372 A GB1496372 A GB 1496372A
- Authority
- GB
- United Kingdom
- Prior art keywords
- warszawa
- vapour
- annealing
- oct
- per cent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 abstract 4
- 238000000137 annealing Methods 0.000 abstract 2
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 abstract 2
- 238000005401 electroluminescence Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000001228 spectrum Methods 0.000 abstract 2
- 229910000497 Amalgam Inorganic materials 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 1
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/052—Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions
Landscapes
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL1974174745A PL93896B1 (enrdf_load_stackoverflow) | 1974-10-10 | 1974-10-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1496372A true GB1496372A (en) | 1977-12-30 |
Family
ID=19969236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB40905/75A Expired GB1496372A (en) | 1974-10-10 | 1975-10-07 | Electroluminescent device |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5164888A (enrdf_load_stackoverflow) |
| DD (1) | DD122596A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2544861A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2287777A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1496372A (enrdf_load_stackoverflow) |
| PL (1) | PL93896B1 (enrdf_load_stackoverflow) |
| SU (1) | SU649344A3 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0625359B2 (ja) * | 1984-03-16 | 1994-04-06 | 日亜化学工業株式会社 | デイスプレイ用長残光螢光体 |
| US4719386A (en) * | 1984-11-24 | 1988-01-12 | Matsushita Electric Works, Ltd. | Photoconverter and lamp utilizing multi-quantum emission |
| JP2739803B2 (ja) * | 1992-12-25 | 1998-04-15 | 富士ゼロックス株式会社 | 無機薄膜ｅｌ素子 |
-
1974
- 1974-10-10 PL PL1974174745A patent/PL93896B1/pl unknown
-
1975
- 1975-10-01 SU SU752176942A patent/SU649344A3/ru active
- 1975-10-07 GB GB40905/75A patent/GB1496372A/en not_active Expired
- 1975-10-07 DE DE19752544861 patent/DE2544861A1/de active Pending
- 1975-10-08 DD DD188751A patent/DD122596A5/xx unknown
- 1975-10-10 FR FR7531115A patent/FR2287777A1/fr active Granted
- 1975-10-11 JP JP50122826A patent/JPS5164888A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2287777A1 (fr) | 1976-05-07 |
| SU649344A3 (ru) | 1979-02-25 |
| PL93896B1 (enrdf_load_stackoverflow) | 1977-06-30 |
| DD122596A5 (enrdf_load_stackoverflow) | 1976-10-12 |
| JPS5164888A (en) | 1976-06-04 |
| DE2544861A1 (de) | 1976-04-15 |
| FR2287777B1 (enrdf_load_stackoverflow) | 1979-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB998415A (en) | Semiconductor devices having epitaxial films and methods of making them | |
| Nishino et al. | Electrical and optical properties of Si-SnO2 heterojunctions | |
| Chiang et al. | Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAs | |
| Toyama | Effect of Heat Treatment on Gallium Arsenide Crystals. I. Thermal Conversion in Excess Arsenic Vapor | |
| Makino et al. | The influence of plasma annealing on electrical properties of polycrystalline Si | |
| GB1496372A (en) | Electroluminescent device | |
| Demberel et al. | Deep levels in Fe-doped InP | |
| Kužel et al. | Surface and bulk conductivities of Cu2O single crystals | |
| Young et al. | Interaction of Li and O with Radiation‐Produced Defects in Si | |
| Hunsperger et al. | Electrical properties of Cd, Zn and S ion-implanted layers in GaAs | |
| Fuller et al. | The ionization behavior of donors formed from oxygen in germanium | |
| Lawther et al. | Forward‐bias electroluminescence in ZnSe diodes | |
| Tell | Properties of the Alkalis in CdS | |
| Tell | Some optical properties of cadmium sulfide containing phosphorus and arsenic | |
| Wang et al. | Indium ohmic contacts to n-ZnSe | |
| Gibbon et al. | Diffusion of tin into GaAs from doped SiO2 film sources | |
| Nakau et al. | Tl-doped p-type layer of ZnSe | |
| Blouke et al. | Solid solubility of Zn in Si | |
| Palmetshofer et al. | Evaluation of doping profiles in ion‐implanted PbTe | |
| Svob et al. | Low-temperature diffusion of lithium in CdTe | |
| Inada et al. | Dual species ion implantation in GaAs | |
| Chang | Junction delineation by anodic oxidation in InSb (As, P) | |
| Ozsan et al. | Electroluminescence in zinc sulpho-selenide and in zinc sulphide | |
| Weller | Semiconductivity in Cd1-xCaxF2: In3+ single crystals | |
| Vigil et al. | Schottky diodes on ZnIn2S4 single crystals |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |