GB1496372A - Electroluminescent device - Google Patents
Electroluminescent deviceInfo
- Publication number
- GB1496372A GB1496372A GB4090575A GB4090575A GB1496372A GB 1496372 A GB1496372 A GB 1496372A GB 4090575 A GB4090575 A GB 4090575A GB 4090575 A GB4090575 A GB 4090575A GB 1496372 A GB1496372 A GB 1496372A
- Authority
- GB
- United Kingdom
- Prior art keywords
- warszawa
- vapour
- annealing
- oct
- per cent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 abstract 4
- 238000000137 annealing Methods 0.000 abstract 2
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 abstract 2
- 238000005401 electroluminescence Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000001228 spectrum Methods 0.000 abstract 2
- 229910000497 Amalgam Inorganic materials 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 1
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
1496372 Electroluminescence OSRODEK BADAWCZO-ROZWOJOWY MONOKRYSZTALOW WARSZAWA and UNIWERSYTET WARSZAWSKI INSTITUT FIZYKI DOSWIADCZALNEJ WARSZAWA 7 Oct 1975 [10 Oct 1974] 40905/75 Heading C4S [Also in Division H1] An electroluminescent device includes cadmium fluoride crystals doped with a trivalent element (e.g. 0À2 to 0À5 mole per cent) and with Mn (e.g. 0À1 to 5 mole per cent). Electron concentration may be >10<SP>15</SP> cm.<SP>-3</SP>. The devices may be metal-semiconductor or metal-insulator semi-conductor. Crystal transparency wavelengths, resistivity (e.g. 1 # cm. for n-type), quantum efficiency, and reflection coefficient are exemplified. Conductivity is achieved by doping with Mn and Sc, then annealing the crystals in Cd vapour. In or Ga may replace the Sc. Resistance is controlled in the range 1 to 10<SP>4</SP> # cms. by the additive concentration as well as time and temperature of annealing in the Cd vapour. Efficiency and luminescent homogeneity were examined by observing electroluminescence in an electrolytic cell. Ohmic contacts were obtained by In penetration into a freshly-etched crystal surface. Etching procedure is specified, and before contact setting, the samples were moistened with Hg-In amalgam. In an MIS device, an isolating layer may be of calcium fluoride or cadmium fluoride and the blocking layer of Au or Ag. The electroluminescent spectrum may reach a maximum of about 520 nm. and coincide with the photoluminescent spectrum.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL17474574A PL93896B1 (en) | 1974-10-10 | 1974-10-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1496372A true GB1496372A (en) | 1977-12-30 |
Family
ID=19969236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4090575A Expired GB1496372A (en) | 1974-10-10 | 1975-10-07 | Electroluminescent device |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5164888A (en) |
| DD (1) | DD122596A5 (en) |
| DE (1) | DE2544861A1 (en) |
| FR (1) | FR2287777A1 (en) |
| GB (1) | GB1496372A (en) |
| PL (1) | PL93896B1 (en) |
| SU (1) | SU649344A3 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0625359B2 (en) * | 1984-03-16 | 1994-04-06 | 日亜化学工業株式会社 | Long afterglow phosphor for display |
| GB2167428B (en) * | 1984-11-24 | 1988-08-10 | Matsushita Electric Works Ltd | Photoconverter |
| JP2739803B2 (en) * | 1992-12-25 | 1998-04-15 | 富士ゼロックス株式会社 | Inorganic thin film EL device |
-
1974
- 1974-10-10 PL PL17474574A patent/PL93896B1/pl unknown
-
1975
- 1975-10-01 SU SU752176942A patent/SU649344A3/en active
- 1975-10-07 DE DE19752544861 patent/DE2544861A1/en active Pending
- 1975-10-07 GB GB4090575A patent/GB1496372A/en not_active Expired
- 1975-10-08 DD DD18875175A patent/DD122596A5/xx unknown
- 1975-10-10 FR FR7531115A patent/FR2287777A1/en active Granted
- 1975-10-11 JP JP50122826A patent/JPS5164888A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2544861A1 (en) | 1976-04-15 |
| SU649344A3 (en) | 1979-02-25 |
| JPS5164888A (en) | 1976-06-04 |
| FR2287777B1 (en) | 1979-04-27 |
| PL93896B1 (en) | 1977-06-30 |
| FR2287777A1 (en) | 1976-05-07 |
| DD122596A5 (en) | 1976-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |