GB1491845A - Differential sense amplifier circuits - Google Patents

Differential sense amplifier circuits

Info

Publication number
GB1491845A
GB1491845A GB12972/76A GB1297276A GB1491845A GB 1491845 A GB1491845 A GB 1491845A GB 12972/76 A GB12972/76 A GB 12972/76A GB 1297276 A GB1297276 A GB 1297276A GB 1491845 A GB1491845 A GB 1491845A
Authority
GB
United Kingdom
Prior art keywords
lines
potential
line
turns
storing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12972/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1491845A publication Critical patent/GB1491845A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
GB12972/76A 1975-05-21 1976-03-31 Differential sense amplifier circuits Expired GB1491845A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/579,354 US3992637A (en) 1975-05-21 1975-05-21 Unclocked sense ampllifier

Publications (1)

Publication Number Publication Date
GB1491845A true GB1491845A (en) 1977-11-16

Family

ID=24316559

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12972/76A Expired GB1491845A (en) 1975-05-21 1976-03-31 Differential sense amplifier circuits

Country Status (4)

Country Link
US (1) US3992637A (enExample)
JP (1) JPS51142923A (enExample)
DE (1) DE2555437C2 (enExample)
GB (1) GB1491845A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4508980A (en) * 1976-11-11 1985-04-02 Signetics Corporation Sense and refresh amplifier circuit
US4412143A (en) * 1981-03-26 1983-10-25 Ncr Corporation MOS Sense amplifier
TW432545B (en) 1998-08-07 2001-05-01 Ibm Method and improved SOI body contact structure for transistors
US6154091A (en) * 1999-06-02 2000-11-28 International Business Machines Corporation SOI sense amplifier with body contact structure
US7333379B2 (en) * 2006-01-12 2008-02-19 International Business Machines Corporation Balanced sense amplifier circuits with adjustable transistor body bias

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
DE2309192C3 (de) * 1973-02-23 1975-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung
US3838404A (en) * 1973-05-17 1974-09-24 Teletype Corp Random access memory system and cell
US3858060A (en) * 1973-06-07 1974-12-31 Ibm Integrated driver circuit
US3882326A (en) * 1973-12-26 1975-05-06 Ibm Differential amplifier for sensing small signals

Also Published As

Publication number Publication date
DE2555437C2 (de) 1982-04-15
JPS51142923A (en) 1976-12-08
US3992637A (en) 1976-11-16
DE2555437A1 (de) 1976-12-09
JPS5752667B2 (enExample) 1982-11-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee