GB1489007A - Logic circuits - Google Patents

Logic circuits

Info

Publication number
GB1489007A
GB1489007A GB21624/75A GB2162475A GB1489007A GB 1489007 A GB1489007 A GB 1489007A GB 21624/75 A GB21624/75 A GB 21624/75A GB 2162475 A GB2162475 A GB 2162475A GB 1489007 A GB1489007 A GB 1489007A
Authority
GB
United Kingdom
Prior art keywords
mosfets
supply voltage
exclusive
circuit
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21624/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1489007A publication Critical patent/GB1489007A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H03K19/0963—Synchronous circuits, i.e. using clock signals using transistors of complementary type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
    • B29C48/03—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor characterised by the shape of the extruded material at extrusion
    • B29C48/09—Articles with cross-sections having partially or fully enclosed cavities, e.g. pipes or channels
    • B29C48/10—Articles with cross-sections having partially or fully enclosed cavities, e.g. pipes or channels flexible, e.g. blown foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)

Abstract

1489007 Transistor logic circuits INTERNATIONAL BUSINESS MACHINES CORP 20 May 1975 [28 June 1974] 21624/75 Heading H3T A logic circuit, e.g. an exclusive OR, comprises a pair of MOSFETs 21, 22 of the same conductivity type coupled between a first supply voltage terminal 25 and an output 26 and an inverter formed by one of the MOSFETs 21 connected adjacent to one of the supply voltage terminals 25 and an additional MOSFET 36 of opposite conductivity type, connected to the other supply voltage terminal 31. In the exclusive OR circuit shown, the inputs are supplied to A, B and the inverse forms A, B of the input are derived by inverters comprising MOSFETs 21, 36 and 23, 38. The substrates of the N-type MOSFETs are connected to ground whereas those of the P-type are connected to +V. By using transistors 21, 23, which are part of a known exclusive OR circuit as parts of the inverter, two MOSFETs are saved. Fig. 1 (not shown) depicts a cross-section of an integrated circuit comprising two MOSFETs.
GB21624/75A 1974-06-28 1975-05-20 Logic circuits Expired GB1489007A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7424577*A FR2276694A1 (en) 1974-06-28 1974-06-28 INTEGRATED LOGIC CIRCUIT OR EXCLUSIVE WITH COMPLEMENTARY MOSFET TRANSISTORS

Publications (1)

Publication Number Publication Date
GB1489007A true GB1489007A (en) 1977-10-19

Family

ID=9141290

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21624/75A Expired GB1489007A (en) 1974-06-28 1975-05-20 Logic circuits

Country Status (4)

Country Link
JP (1) JPS5114257A (en)
DE (1) DE2519486A1 (en)
FR (1) FR2276694A1 (en)
GB (1) GB1489007A (en)

Also Published As

Publication number Publication date
FR2276694A1 (en) 1976-01-23
FR2276694B1 (en) 1976-12-24
DE2519486A1 (en) 1976-01-15
JPS5114257A (en) 1976-02-04

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee