GB1468970A - Charge transfer devices - Google Patents
Charge transfer devicesInfo
- Publication number
- GB1468970A GB1468970A GB1097074A GB1097074A GB1468970A GB 1468970 A GB1468970 A GB 1468970A GB 1097074 A GB1097074 A GB 1097074A GB 1097074 A GB1097074 A GB 1097074A GB 1468970 A GB1468970 A GB 1468970A
- Authority
- GB
- United Kingdom
- Prior art keywords
- capacitances
- march
- utilized
- instead
- charge coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Networks Using Active Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
1468970 Charge coupled devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 12 March 1974 [19 March 1973] 10970/74 Heading H1K [Also in Division H3] In a charge coupled device, the voltage dependent property of the capacitances is utilized to compensate for signal degradation along the device. Fig. 3 shows a device using a four-phase clock in which bias sources 13, 14 are included in the switching signal circuits to vary the values of the depletion capacitances between a maximum value when they contain information charges or a minimum value when they contain reference charges. Instead of the depletion capacitances, the inversion capacitances may be utilized, Figs. 7, 8 (not shown), this latter arrangement being further modified by splitting the electrodes into two parts (62, 63). In a further modification, Fig. 12 (not shown), the electrode of a capacitor the source electrode of the next transistor are not one continuous surface region. The arrangement of Fig. 3 may also be modified to use 2-phase clock signals, Fig. 13 (not shown). Instead of FET's, bipolar transistors may be used, employing either PN or Schottky barrier capacitances. Bipolar constructions are described with reference to Figs. 10, 11 (not shown), the latter employing lateral transistors.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7303777A NL7303777A (en) | 1973-03-19 | 1973-03-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1468970A true GB1468970A (en) | 1977-03-30 |
Family
ID=19818459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1097074A Expired GB1468970A (en) | 1973-03-19 | 1974-03-12 | Charge transfer devices |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS535499B2 (en) |
| BE (1) | BE812459A (en) |
| BR (1) | BR7402079D0 (en) |
| CA (1) | CA1004762A (en) |
| CH (1) | CH570706A5 (en) |
| DE (1) | DE2411293C2 (en) |
| DK (1) | DK140912B (en) |
| ES (1) | ES424349A1 (en) |
| FR (1) | FR2222755B1 (en) |
| GB (1) | GB1468970A (en) |
| IT (1) | IT1009284B (en) |
| NL (1) | NL7303777A (en) |
| SE (1) | SE407637B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8330112D0 (en) * | 1983-11-11 | 1983-12-21 | Sinclair Res Ltd | Semiconductor device |
-
1973
- 1973-03-19 NL NL7303777A patent/NL7303777A/xx not_active Application Discontinuation
-
1974
- 1974-03-09 DE DE19742411293 patent/DE2411293C2/en not_active Expired
- 1974-03-12 GB GB1097074A patent/GB1468970A/en not_active Expired
- 1974-03-13 IT IT6772574A patent/IT1009284B/en active
- 1974-03-15 DK DK145474A patent/DK140912B/en unknown
- 1974-03-15 CA CA195,086A patent/CA1004762A/en not_active Expired
- 1974-03-15 SE SE7403507A patent/SE407637B/en not_active IP Right Cessation
- 1974-03-16 ES ES424349A patent/ES424349A1/en not_active Expired
- 1974-03-18 CH CH371474A patent/CH570706A5/xx not_active IP Right Cessation
- 1974-03-18 BE BE142137A patent/BE812459A/en unknown
- 1974-03-18 BR BR207974A patent/BR7402079D0/en unknown
- 1974-03-18 JP JP3017074A patent/JPS535499B2/ja not_active Expired
- 1974-03-19 FR FR7409173A patent/FR2222755B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DK140912B (en) | 1979-12-03 |
| SE407637B (en) | 1979-04-02 |
| DE2411293C2 (en) | 1982-02-04 |
| DE2411293A1 (en) | 1974-09-26 |
| FR2222755B1 (en) | 1976-12-17 |
| CA1004762A (en) | 1977-02-01 |
| BR7402079D0 (en) | 1974-12-03 |
| BE812459A (en) | 1974-09-18 |
| DK140912C (en) | 1980-05-19 |
| FR2222755A1 (en) | 1974-10-18 |
| JPS535499B2 (en) | 1978-02-28 |
| JPS49128647A (en) | 1974-12-10 |
| NL7303777A (en) | 1974-09-23 |
| ES424349A1 (en) | 1976-06-01 |
| IT1009284B (en) | 1976-12-10 |
| CH570706A5 (en) | 1975-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |