GB1468572A - Junction-type avalanche diode - Google Patents

Junction-type avalanche diode

Info

Publication number
GB1468572A
GB1468572A GB1578074A GB1578074A GB1468572A GB 1468572 A GB1468572 A GB 1468572A GB 1578074 A GB1578074 A GB 1578074A GB 1578074 A GB1578074 A GB 1578074A GB 1468572 A GB1468572 A GB 1468572A
Authority
GB
United Kingdom
Prior art keywords
layer
highly doped
junction
doped material
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1578074A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1468572A publication Critical patent/GB1468572A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes 
GB1578074A 1973-04-13 1974-04-09 Junction-type avalanche diode Expired GB1468572A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7313505A FR2225842B1 (enrdf_load_html_response) 1973-04-13 1973-04-13

Publications (1)

Publication Number Publication Date
GB1468572A true GB1468572A (en) 1977-03-30

Family

ID=9117952

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1578074A Expired GB1468572A (en) 1973-04-13 1974-04-09 Junction-type avalanche diode

Country Status (4)

Country Link
JP (1) JPS503586A (enrdf_load_html_response)
DE (1) DE2417933A1 (enrdf_load_html_response)
FR (1) FR2225842B1 (enrdf_load_html_response)
GB (1) GB1468572A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109637930A (zh) * 2018-11-21 2019-04-16 温州大学 GaN/Si异质结侧向型光控IMPATT二极管及其制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5225673U (enrdf_load_html_response) * 1975-08-13 1977-02-23
JPS53148001U (enrdf_load_html_response) * 1977-04-25 1978-11-21
FR2399740A1 (fr) * 1977-08-02 1979-03-02 Thomson Csf Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode
JPS552435U (enrdf_load_html_response) * 1978-06-23 1980-01-09
JPS58195689U (ja) * 1982-06-24 1983-12-26 ジェイエスアール株式会社 改良された洗浄用ヘツド
DE3725214A1 (de) * 1986-09-27 1988-03-31 Licentia Gmbh Impatt-diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109637930A (zh) * 2018-11-21 2019-04-16 温州大学 GaN/Si异质结侧向型光控IMPATT二极管及其制备方法

Also Published As

Publication number Publication date
FR2225842A1 (enrdf_load_html_response) 1974-11-08
DE2417933A1 (de) 1974-10-24
FR2225842B1 (enrdf_load_html_response) 1977-09-02
JPS503586A (enrdf_load_html_response) 1975-01-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee