GB1456028A - Bidirectional thyristor - Google Patents

Bidirectional thyristor

Info

Publication number
GB1456028A
GB1456028A GB5561473A GB5561473A GB1456028A GB 1456028 A GB1456028 A GB 1456028A GB 5561473 A GB5561473 A GB 5561473A GB 5561473 A GB5561473 A GB 5561473A GB 1456028 A GB1456028 A GB 1456028A
Authority
GB
United Kingdom
Prior art keywords
semi
barrier
conductor
layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5561473A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of GB1456028A publication Critical patent/GB1456028A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
GB5561473A 1972-12-16 1973-11-30 Bidirectional thyristor Expired GB1456028A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722261666 DE2261666A1 (de) 1972-12-16 1972-12-16 Zweirichtungs-thyristor

Publications (1)

Publication Number Publication Date
GB1456028A true GB1456028A (en) 1976-11-17

Family

ID=5864591

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5561473A Expired GB1456028A (en) 1972-12-16 1973-11-30 Bidirectional thyristor

Country Status (8)

Country Link
AR (1) AR196727A1 (de)
BR (1) BR7309788D0 (de)
CH (1) CH572667A5 (de)
DE (1) DE2261666A1 (de)
ES (1) ES419900A1 (de)
FR (1) FR2210827B1 (de)
GB (1) GB1456028A (de)
IT (1) IT999267B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
DE2805813C3 (de) * 1978-02-11 1984-02-23 Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE
DE4439012A1 (de) * 1994-11-02 1996-05-09 Abb Management Ag Zweirichtungsthyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053937A (de) * 1965-07-23 1900-01-01

Also Published As

Publication number Publication date
AR196727A1 (es) 1974-02-12
CH572667A5 (de) 1976-02-13
IT999267B (it) 1976-02-20
BR7309788D0 (pt) 1974-08-29
DE2261666A1 (de) 1974-06-20
FR2210827A1 (de) 1974-07-12
ES419900A1 (es) 1976-04-01
FR2210827B1 (de) 1977-06-10

Similar Documents

Publication Publication Date Title
GB1450265A (en) Semiconductor temperature sensor
GB1173507A (en) Improvements in and relating to Semiconductor Devices.
GB1265204A (de)
GB1065150A (en) Semiconductor switch
GB1312171A (en) Semiconductor arrangements for use as fixed value stores
GB1115944A (en) Semiconductor devices
GB1060208A (en) Avalanche transistor
GB995773A (en) Semi-conductor devices
GB1220306A (en) Triac structure
GB1456028A (en) Bidirectional thyristor
GB1332861A (en) Gate controlled switch
NL6511150A (de)
GB1337283A (en) Method of manufacturing a semiconductor device
GB1173575A (en) Controllable Schottky Diode.
GB1301193A (en) Improvements in semiconductor devices
US3628069A (en) Integrated circuit having monolithic inversely operated transistors
GB1367325A (en) Negative resistance semiconductor element
ES408617A1 (es) Un metodo para la fabricacion de un dispositivo semiconduc-tor.
GB1488264A (en) Solid state elements
GB1029613A (en) A controllable pnpn semi-conductor device
GB1012049A (en) Semiconductive devices
GB1021147A (en) Divided base four-layer semiconductor device
ES374318A1 (es) Un metodo de fabricar un dispositivo semiconductor sensiblea la presion.
GB1232837A (de)
GB1480201A (en) Four zone semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee