GB1426543A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1426543A
GB1426543A GB1986374A GB1986374A GB1426543A GB 1426543 A GB1426543 A GB 1426543A GB 1986374 A GB1986374 A GB 1986374A GB 1986374 A GB1986374 A GB 1986374A GB 1426543 A GB1426543 A GB 1426543A
Authority
GB
United Kingdom
Prior art keywords
base
semi
planar member
support
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1986374A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB1426543A publication Critical patent/GB1426543A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microwave Amplifiers (AREA)

Abstract

1426543 Semi-conductor devices RAYTHEON CO 6 May 1974 [18 May 1973] 19863/74 Heading H1K A semi-conductor device package comprises an electrically conducting base 10, an electrically conducting planar member 13 on the base 10 and in electrical contact therewith, a thermally conducting but electrically insulating support 11 for the semi-conductor device 12 mounted on the base 10 in an aperture 14 in the planar member 13, and a conductive coating (31), Fig. 6 (not shown), on the surface of the support 11 remote from the base 10. The device is completed by a conducting spacer frame 17, an insulating apertured plate 18 having metallized regions 19, 20 for making connections to electrodes of the device 12, an insulating sealing frame 21, a cover 38 and leads 22, 23 which are hermetically sealed together. The base 10 may be made of copper and the planar member 13 of nickel or molybdenum and the support 11 is alumina or beryllia. The components are brazed together using eutectic Cu-Ag solder. MOS capacitors (29, 30) are used for impedance matching and leads of gold-plated copper are used. The device 12 may be a microwave power transistor and its use in a phased array radar system is described. Dimensions of the components of the package are given.
GB1986374A 1973-05-18 1974-05-06 Semiconductor devices Expired GB1426543A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36173173A 1973-05-18 1973-05-18

Publications (1)

Publication Number Publication Date
GB1426543A true GB1426543A (en) 1976-03-03

Family

ID=23423227

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1986374A Expired GB1426543A (en) 1973-05-18 1974-05-06 Semiconductor devices

Country Status (5)

Country Link
JP (1) JPS5624374B2 (en)
CA (1) CA1001323A (en)
CH (1) CH572665A5 (en)
DE (1) DE2423662A1 (en)
GB (1) GB1426543A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2181300A (en) * 1985-09-26 1987-04-15 Int Standard Electric Corp Semiconductor chip housing and method of manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0681741A4 (en) * 1993-11-29 1996-06-05 Rogers Corp Electronic chip carrier package and method of making thereof.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2181300A (en) * 1985-09-26 1987-04-15 Int Standard Electric Corp Semiconductor chip housing and method of manufacture
US4701573A (en) * 1985-09-26 1987-10-20 Itt Gallium Arsenide Technology Center Semiconductor chip housing

Also Published As

Publication number Publication date
JPS5020666A (en) 1975-03-05
CH572665A5 (en) 1976-02-13
JPS5624374B2 (en) 1981-06-05
DE2423662A1 (en) 1974-12-05
CA1001323A (en) 1976-12-07

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