GB1406760A - Depositing semiconductor material - Google Patents

Depositing semiconductor material

Info

Publication number
GB1406760A
GB1406760A GB2355473A GB2355473A GB1406760A GB 1406760 A GB1406760 A GB 1406760A GB 2355473 A GB2355473 A GB 2355473A GB 2355473 A GB2355473 A GB 2355473A GB 1406760 A GB1406760 A GB 1406760A
Authority
GB
United Kingdom
Prior art keywords
substrate
hydride
conductor
semi
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2355473A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1406760A publication Critical patent/GB1406760A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
GB2355473A 1972-05-20 1973-05-17 Depositing semiconductor material Expired GB1406760A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7206877A NL7206877A (sv) 1972-05-20 1972-05-20

Publications (1)

Publication Number Publication Date
GB1406760A true GB1406760A (en) 1975-09-17

Family

ID=19816097

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2355473A Expired GB1406760A (en) 1972-05-20 1973-05-17 Depositing semiconductor material

Country Status (7)

Country Link
JP (1) JPS5225295B2 (sv)
CA (1) CA990626A (sv)
DE (1) DE2324127A1 (sv)
FR (1) FR2185445B1 (sv)
GB (1) GB1406760A (sv)
IT (1) IT985922B (sv)
NL (1) NL7206877A (sv)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045600A1 (en) * 1980-07-28 1982-02-10 Monsanto Company Improved method for producing semiconductor grade silicon
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3725598B2 (ja) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 エピタキシャルウェハの製造方法
JP2006070342A (ja) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd 気相成膜装置、サセプタおよび気相成膜方法
JP6333646B2 (ja) 2014-07-08 2018-05-30 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ 二液型塗料組成物及びそれを用いた複層塗膜形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045600A1 (en) * 1980-07-28 1982-02-10 Monsanto Company Improved method for producing semiconductor grade silicon
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer

Also Published As

Publication number Publication date
CA990626A (en) 1976-06-08
JPS4943572A (sv) 1974-04-24
NL7206877A (sv) 1973-11-22
DE2324127A1 (de) 1973-12-06
FR2185445A1 (sv) 1974-01-04
JPS5225295B2 (sv) 1977-07-06
FR2185445B1 (sv) 1976-06-11
IT985922B (it) 1974-12-30

Similar Documents

Publication Publication Date Title
GB1379414A (en) Forming an epitaxial layer on a semiconductor substrate
GB1459839A (en) Dual growth rate method of depositing epitaxial crystalline layers
GB1173330A (en) A method for Forming Electrode in Semiconductor Devices
GB1406760A (en) Depositing semiconductor material
US3151006A (en) Use of a highly pure semiconductor carrier material in a vapor deposition process
GB1328170A (en) Epitaxial deposition
GB1132491A (en) Improvements in or relating to the manufacture of semiconductor systems
GB1226829A (sv)
GB1342542A (en) Epitaxial deposition
US3397094A (en) Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere
GB1229128A (sv)
JPS53126263A (en) Method of epitaxially growing gallium arsenide layer on gallium arsenide body
Kikkawa et al. Effective Si planar doping of GaAs by MOVPE using tertiarybutylarsine
Schalla et al. Effect of the Temperature of Formation on the Crystallinity and Electrical Properties of Germanium Films on Fluorite
TW377476B (en) Method of selective epitaxis of compound film on semiconductors
GB1037146A (en) Improvements in or relating to processes for manufacturing semiconductor cyrstals having at least two layers of different conductivity and/or conductivity type
GB1386900A (en) Semiconductor layers
JPS57192017A (en) Epitaxial growing method
US3337375A (en) Semiconductor method and device
GB1056720A (en) Improved method of epitaxially vapour depositing semiconductor material
JPS5553415A (en) Selective epitaxial growing
GB1436999A (en) Method of depositing aluminium on the surface of a semi- conductor wafer
Dobosz et al. An Influence of the Rate of Epitaxial Growth on Physical Properties of Gallium Nitride
GB1070066A (en) Improvements in and relating to production of monocrystalline layers
JPS54102295A (en) Epitaxial crowth method

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee