GB1395473A - Switching circuits - Google Patents

Switching circuits

Info

Publication number
GB1395473A
GB1395473A GB1680773A GB1680773A GB1395473A GB 1395473 A GB1395473 A GB 1395473A GB 1680773 A GB1680773 A GB 1680773A GB 1680773 A GB1680773 A GB 1680773A GB 1395473 A GB1395473 A GB 1395473A
Authority
GB
United Kingdom
Prior art keywords
diode
switching
input
transistor
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1680773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB1680773A priority Critical patent/GB1395473A/en
Publication of GB1395473A publication Critical patent/GB1395473A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads

Landscapes

  • Electronic Switches (AREA)

Abstract

1395473 Switching circuits L SEYMOUR 12 July 1973 [7 April 1973] 16807/73 Heading H3T A switching circuit comprises complementary transistors each having an output connected in series with the input of the other to form a regenerative loop, a protective diode 13 connected across the input of one transistor and switching means 7 connected across one input to control the switching state. The circuit is incorporated in a time delay arrangement in which, when the switch is closed the base of transistor 1 is shorted to the lower rail through a germanium diode 10 and a capacitor 5 is charged to the Zener voltage of diode 8. When the switch is opened the capacitor charges until a Zener diode 9 breaks down and causes the switching circuit to conduct and operate a relay 11.
GB1680773A 1973-04-07 1973-04-07 Switching circuits Expired GB1395473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1680773A GB1395473A (en) 1973-04-07 1973-04-07 Switching circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1680773A GB1395473A (en) 1973-04-07 1973-04-07 Switching circuits

Publications (1)

Publication Number Publication Date
GB1395473A true GB1395473A (en) 1975-05-29

Family

ID=10084019

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1680773A Expired GB1395473A (en) 1973-04-07 1973-04-07 Switching circuits

Country Status (1)

Country Link
GB (1) GB1395473A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021687A (en) * 1974-11-06 1977-05-03 Hitachi, Ltd. Transistor circuit for deep saturation prevention

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021687A (en) * 1974-11-06 1977-05-03 Hitachi, Ltd. Transistor circuit for deep saturation prevention

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee