GB1395025A - Sensor for converting a physical pattern into an electrical signal as a function of time - Google Patents

Sensor for converting a physical pattern into an electrical signal as a function of time

Info

Publication number
GB1395025A
GB1395025A GB1227972A GB1227972A GB1395025A GB 1395025 A GB1395025 A GB 1395025A GB 1227972 A GB1227972 A GB 1227972A GB 1227972 A GB1227972 A GB 1227972A GB 1395025 A GB1395025 A GB 1395025A
Authority
GB
United Kingdom
Prior art keywords
elements
type
islands
storage
march
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1227972A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1395025A publication Critical patent/GB1395025A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Image Input (AREA)
  • Facsimile Heads (AREA)
  • Color Television Image Signal Generators (AREA)
  • Facsimile Scanning Arrangements (AREA)
GB1227972A 1971-03-19 1972-03-16 Sensor for converting a physical pattern into an electrical signal as a function of time Expired GB1395025A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7103694,A NL170480C (nl) 1971-03-19 1971-03-19 Opnemer voor het omzetten van een twee-dimensionaal fysisch patroon in een televisiesignaal.

Publications (1)

Publication Number Publication Date
GB1395025A true GB1395025A (en) 1975-05-21

Family

ID=19812724

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1227972A Expired GB1395025A (en) 1971-03-19 1972-03-16 Sensor for converting a physical pattern into an electrical signal as a function of time

Country Status (9)

Country Link
US (1) US3824337A (https=)
JP (1) JPS5952591B1 (https=)
AU (1) AU463493B2 (https=)
CA (1) CA974638A (https=)
DE (1) DE2210303C3 (https=)
FR (1) FR2130398B1 (https=)
GB (1) GB1395025A (https=)
IT (1) IT950281B (https=)
NL (1) NL170480C (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3223849A1 (de) * 1981-09-17 1983-03-31 Canon K.K., Tokyo Festkoerper-bildabtastvorrichtung
US4486783A (en) * 1981-09-17 1984-12-04 Canon Kabushiki Kaisha Solid state image sensing device

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226974B2 (https=) * 1973-02-14 1977-07-18
NL7311429A (nl) * 1973-08-20 1975-02-24 Philips Nv Opneeminrichting uitgevoerd met informatie- opneemplaatsen in een halfgeleiderlichaam.
DE2504317B2 (de) * 1974-09-05 1977-09-29 The General Corp, Kawasaki, Kanagawa (Japan) Farbfernsehkamera
US3952188A (en) * 1975-03-24 1976-04-20 Sperry Rand Corporation Monolithic transversal filter with charge transfer delay line
US4298800A (en) * 1978-02-27 1981-11-03 Computome Corporation Tomographic apparatus and method for obtaining three-dimensional information by radiation scanning
JPS5544788A (en) * 1978-09-27 1980-03-29 Matsushita Electronics Corp Charge transfer method
DE2842856C3 (de) * 1978-10-02 1981-09-03 Siemens AG, 1000 Berlin und 8000 München Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation mit vollständigem Grundladungsbetrieb
US4241263A (en) * 1978-11-16 1980-12-23 General Electric Company Charge transfer dual frequency delay line with phase independent coupling
DE3112907A1 (de) * 1980-03-31 1982-01-07 Canon K.K., Tokyo "fotoelektrischer festkoerper-umsetzer"
US4390791A (en) * 1980-03-31 1983-06-28 Canon Kabushiki Kaisha Solid-state photoelectric transducer
NL8501634A (nl) * 1984-09-14 1986-04-01 Philips Nv Kamera voor televisie-, foto- respektievelijk filmopname uitgevoerd met een automatische fokusinstelinrichting.
NL8501635A (nl) * 1985-06-06 1987-01-02 Philips Nv Kamera voor televisie-, foto- respektievelijk filmopname.
EP0213684B1 (en) * 1985-09-04 1990-05-30 Koninklijke Philips Electronics N.V. Camera for recording television, photographic or cinematographic images
DE3776368D1 (de) * 1986-02-17 1992-03-12 Philips Nv Kamera zur aufnahme von fernsehbildern, photographischen oder kinematographischen bildern mit automatischer fokussierungsvorrichtung.
US4728803A (en) * 1986-07-15 1988-03-01 Ovonic Imaging Systems, Inc. Signal processing apparatus and method for photosensitive imaging system
JP2833729B2 (ja) * 1992-06-30 1998-12-09 キヤノン株式会社 固体撮像装置
JPH11136111A (ja) * 1997-10-30 1999-05-21 Sony Corp 高周波回路
JP3792894B2 (ja) * 1998-05-27 2006-07-05 キヤノン株式会社 固体撮像素子及び固体撮像装置
US7663167B2 (en) * 2004-12-23 2010-02-16 Aptina Imaging Corp. Split transfer gate for dark current suppression in an imager pixel
JP5403369B2 (ja) * 2010-03-31 2014-01-29 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303466A (en) * 1963-03-05 1967-02-07 Control Data Corp Character separating reading machine
US3142824A (en) * 1963-10-16 1964-07-28 Control Data Corp Analog storage circuit
US3562418A (en) * 1966-12-05 1971-02-09 Gen Electric Solid state image converter system
NL155155B (nl) * 1968-04-23 1977-11-15 Philips Nv Inrichting voor het omzetten van een fysisch patroon in een elektrisch signaal als functie van de tijd, daarmede uitgevoerde televisiecamera, alsmede halfgeleiderinrichting voor toepassing daarin.
US3603731A (en) * 1969-08-27 1971-09-07 Paul K Weimer Digital scanning mosaic photosensing system
US3679826A (en) * 1970-07-06 1972-07-25 Philips Corp Solid state image sensing device
US3683193A (en) * 1970-10-26 1972-08-08 Rca Corp Bucket brigade scanning of sensor array

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3223849A1 (de) * 1981-09-17 1983-03-31 Canon K.K., Tokyo Festkoerper-bildabtastvorrichtung
US4486783A (en) * 1981-09-17 1984-12-04 Canon Kabushiki Kaisha Solid state image sensing device
US4499496A (en) * 1981-09-17 1985-02-12 Canon Kabushiki Kaisha Solid state image sensing device
DE3223849C2 (https=) * 1981-09-17 1990-05-23 Canon K.K., Tokio/Tokyo, Jp

Also Published As

Publication number Publication date
AU3997172A (en) 1973-09-20
DE2210303C3 (de) 1975-09-04
NL170480B (nl) 1982-06-01
US3824337A (en) 1974-07-16
JPS5952591B1 (https=) 1984-12-20
NL170480C (nl) 1982-11-01
FR2130398A1 (https=) 1972-11-03
AU463493B2 (en) 1975-07-11
DE2210303A1 (de) 1972-09-28
IT950281B (it) 1973-06-20
FR2130398B1 (https=) 1977-07-15
DE2210303B2 (de) 1975-01-16
CA974638A (en) 1975-09-16
NL7103694A (https=) 1972-09-21

Similar Documents

Publication Publication Date Title
GB1395025A (en) Sensor for converting a physical pattern into an electrical signal as a function of time
US3617753A (en) Semiconductor photoelectric converting device
US3887936A (en) Radiation sensitive solid state devices
US3805062A (en) Method and apparatus for sensing radiation and providing electrical readout
GB1394520A (en) Charge coupled device area imaging array
US4142925A (en) Method of making silicon-insulator-polysilicon infrared image device utilizing epitaxial deposition and selective etching
US3814846A (en) High density photodetection array
US4093957A (en) SOS extrinsic infrared detector and read-out device
US3748479A (en) Arrays of electro-optical elements and associated electric circuitry
US3390273A (en) Electronic shutter with gating and storage features
GB2207801A (en) Thermal imaging devices
GB1246366A (en) Photoelectric device
US4079507A (en) Method of making silicon-insulator-polysilicon infrared imaging device with orientially etched detectors
US3562425A (en) Image signal generating system
US3604987A (en) Radiation-sensing device comprising an array of photodiodes and switching devices in a body of semiconductor material
US3906544A (en) Semiconductor imaging detector device
JPH0456468B2 (https=)
US5115293A (en) Solid-state imaging device
GB1466325A (en) Infra-red detector
US4566024A (en) Matrix infrared detector
US3480780A (en) Radiation sensitive switching system for an array of elements
GB2054961A (en) Excess Charge Removal in Charge Transfer Devices
US3636418A (en) Epitaxial semiconductor device having adherent bonding pads
GB1182324A (en) Improvements in or relating to Semiconductor Matrices
JPH0130306B2 (https=)

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years