GB1380811A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1380811A
GB1380811A GB1738772A GB1738772A GB1380811A GB 1380811 A GB1380811 A GB 1380811A GB 1738772 A GB1738772 A GB 1738772A GB 1738772 A GB1738772 A GB 1738772A GB 1380811 A GB1380811 A GB 1380811A
Authority
GB
United Kingdom
Prior art keywords
coaxial
semi
coupled
conductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1738772A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB1380811A publication Critical patent/GB1380811A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Junction Field-Effect Transistors (AREA)
GB1738772A 1971-04-26 1972-04-14 Semiconductor device Expired GB1380811A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13737371A 1971-04-26 1971-04-26

Publications (1)

Publication Number Publication Date
GB1380811A true GB1380811A (en) 1975-01-15

Family

ID=22477120

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1738772A Expired GB1380811A (en) 1971-04-26 1972-04-14 Semiconductor device

Country Status (6)

Country Link
US (1) US3755752A (https=)
CA (1) CA962785A (https=)
CH (1) CH560464A5 (https=)
FR (1) FR2134473B1 (https=)
GB (1) GB1380811A (https=)
IT (1) IT952392B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
US3896473A (en) * 1973-12-04 1975-07-22 Bell Telephone Labor Inc Gallium arsenide schottky barrier avalance diode array
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
US4197551A (en) * 1977-09-14 1980-04-08 Raytheon Company Semiconductor device having improved Schottky-barrier junction
US4374012A (en) * 1977-09-14 1983-02-15 Raytheon Company Method of making semiconductor device having improved Schottky-barrier junction
DE2926756C2 (de) * 1979-07-03 1984-03-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schottky-Dioden-Anordnung
GB2168857A (en) * 1984-11-14 1986-06-25 Int Standard Electric Corp Method and structure for interconnecting high frequency components
GB9414311D0 (en) * 1994-07-15 1994-09-07 Philips Electronics Uk Ltd A transferred electron effect device
US6208210B1 (en) * 1999-04-07 2001-03-27 Ericsson Inc. Advanced hybrid power amplifier design
US9945048B2 (en) * 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
CN102738392B (zh) * 2012-07-06 2014-04-02 中国科学院微电子研究所 一种耿氏二极管、其制备方法及毫米波振荡器
US9398723B2 (en) 2013-08-29 2016-07-19 Eaton Corporation Apparatus and methods using heat pipes for linking electronic assemblies that unequally produce heat

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3515952A (en) * 1965-02-17 1970-06-02 Motorola Inc Mounting structure for high power transistors
GB1161782A (en) * 1965-08-26 1969-08-20 Associated Semiconductor Mft Improvements in Semiconductor Devices.
US3360851A (en) * 1965-10-01 1968-01-02 Bell Telephone Labor Inc Small area semiconductor device
GB1123389A (en) * 1965-12-20 1968-08-14 Matsushita Electronics Corp A solid state microwave oscillating device
US3457471A (en) * 1966-10-10 1969-07-22 Microwave Ass Semiconductor diodes of the junction type having a heat sink at the surface nearer to the junction
GB1234764A (en) * 1967-08-25 1971-06-09 Nat Res Dev Solid state radar
US3531698A (en) * 1968-05-21 1970-09-29 Hewlett Packard Co Current control in bulk negative conductance materials
US3675161A (en) * 1968-10-12 1972-07-04 Matsushita Electronics Corp Varactor-controlled pn junction semiconductor microwave oscillation device
NL6902447A (https=) * 1969-02-14 1970-08-18
US3689900A (en) * 1970-08-31 1972-09-05 Gen Electric Photo-coded diode array for read only memory
US3673514A (en) * 1970-12-31 1972-06-27 Bell Telephone Labor Inc Schottky barrier transit time negative resistance diode circuits

Also Published As

Publication number Publication date
DE2220485A1 (de) 1972-11-16
CH560464A5 (https=) 1975-03-27
DE2220485B2 (de) 1976-10-14
IT952392B (it) 1973-07-20
FR2134473B1 (https=) 1978-03-03
CA962785A (en) 1975-02-11
US3755752A (en) 1973-08-28
FR2134473A1 (https=) 1972-12-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee