GB1374231A - Integrated circuit devices - Google Patents

Integrated circuit devices

Info

Publication number
GB1374231A
GB1374231A GB2135973A GB2135973A GB1374231A GB 1374231 A GB1374231 A GB 1374231A GB 2135973 A GB2135973 A GB 2135973A GB 2135973 A GB2135973 A GB 2135973A GB 1374231 A GB1374231 A GB 1374231A
Authority
GB
United Kingdom
Prior art keywords
control electrode
diode
integrated circuit
circuit devices
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2135973A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Publication of GB1374231A publication Critical patent/GB1374231A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB2135973A 1972-05-08 1973-05-04 Integrated circuit devices Expired GB1374231A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25110572A 1972-05-08 1972-05-08

Publications (1)

Publication Number Publication Date
GB1374231A true GB1374231A (en) 1974-11-20

Family

ID=22950499

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2135973A Expired GB1374231A (en) 1972-05-08 1973-05-04 Integrated circuit devices

Country Status (5)

Country Link
JP (1) JPS5122349B2 (cs)
CA (1) CA974658A (cs)
FR (1) FR2183882B1 (cs)
GB (1) GB1374231A (cs)
NL (1) NL7306345A (cs)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1392599A (en) * 1971-07-28 1975-04-30 Mullard Ltd Semiconductor memory elements
JPS5040991B2 (cs) * 1971-09-09 1975-12-27

Also Published As

Publication number Publication date
FR2183882A1 (cs) 1973-12-21
DE2322490A1 (de) 1973-11-22
JPS5122349B2 (cs) 1976-07-09
JPS4956594A (cs) 1974-06-01
DE2322490B2 (de) 1975-06-19
FR2183882B1 (cs) 1977-09-02
NL7306345A (cs) 1973-11-12
CA974658A (en) 1975-09-16

Similar Documents

Publication Publication Date Title
US4139880A (en) CMOS polarity reversal circuit
GB1359979A (en) Input transient protection for complementary insulated gate field effect transistor integrated circuit device
GB1396673A (en) Stabilizing fet devices
GB1425985A (en) Arrangements including semiconductor memory devices
GB1377121A (en) Charge coupled circuits
GB1450167A (en) Integrated citcuits
GB1518984A (en) Integrated circuit
GB1383981A (en) Electrically alterable floating gate device and method for altering same
GB1309049A (en) Integrated circuit with a protective input circuit
GB1450561A (en) Capacitance circuits
US3588537A (en) Digital differential circuit means
US3577043A (en) Mosfet with improved voltage breakdown characteristics
GB1291682A (en) Method of producing an integrated solid-state circuit
US4597000A (en) Floating-gate memory cell
GB1297851A (cs)
GB1200757A (en) Uhf amplifier
GB1434652A (en) Semiconductor devices
GB1374231A (en) Integrated circuit devices
GB1535019A (en) Field effect devices
GB1305491A (cs)
GB1360578A (en) Semiconductor integrated circuits
JPS5275187A (en) Mos type semiconductor device
GB1279831A (en) Improvements in or relating to field effect transistors
GB1276791A (en) Semiconductor device
ES373065A1 (es) Un dispositivo semiconductor.

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee